德州仪器新闻稿，1964年8月

FOR IMMEDIATE NEWS RELEASE TEXAS RELEASE INSTRUMENTS INCORPORATED SEMICONDUCTOR BUILDING 13500 • NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

DEMAMBRO

ELECTRONICS

DALLAS> appointed it was

August today Semiconductor- distributor by Cecil Components Located is now stocking DeMambro facility Mass., distributor in Natick, Included electronic rectifier light

*Patented

is an addition

by Texas Instruments Incorporated, Dotson, vice of TI1s Avenue, to the fine Supply and Lafayette president Boston, DeMambro service Company, Industrial The now provided authorized in TI distributor Electronics, authorized TI Mass. components sensors, has been

the full line of TI semiconductors.

in the TI line--said

types, in Boston IN BOSTON division. by Engineering in Canton, TEXAS DIVISION Electronics

at 1095 Commonwealth

Electronics New England P. DALLAS, NEW TI DISTRIBUTOR 1--DeMambro an authorized announced APPOINTED • to be the broadest in the industry- and 200 diodes, and SOLID plus CIRCUIT@

• are

line of solid-state

550 types

a similarly

of transistors, range

of SCR 1 s, integrated circuits*. wide semiconductor 2 30

by TI -30-

MAILING ADDRESS, POST OFFICE BOX 5012, DALLAS TEXAS 75222 , ADAMS 5-3111 , CABLE: TEXINS ihdl/)1 ~11Mef)£ tll8 /#C:.J>E 1 /

r Z-Mcoel' CilDL-t1

Dick Davies AD 5-3111 Ext 4225

INSTRUMENTS TEXAS INCORPORATED DIVISION APPARATUS TEXAS award

DOLLAR AWARDED MILLION INSTRUMENTS FOR LTV AIRCRAFT RADAR CONTRACT

August. 5 -(Special)= of a contract for over 0

to fly by October

1965. will supply Instruments Texas which will provide display

of pertinent Vought

ground

conceived

forward-looking

radars the military and aerospace signal radar Bucy, by Texas Texas

IIo and Mohawk. with full

for Instruments Additionally radar 0 design New antenna in the A-7A this

and TV display

reliability and advanced subsystem. and capabilities techniques on similar work to increase approaches the latest incorporate Instruments Phantom of unique primes. will be introduced from the contract, who signed

and manufactured

design.

set will

and

run as high as 1000 aircraft.

in a family in electronic resulting configuration J. F. the newest processing The radar may will include The new radar and miniaturization Production television assault the A-7A as the latest subsystem

the A-7 A radar

described for the A- 7A and also ranging of LTV is building president. vice The A-7 A subsystem information.

for the Navy.

aircraft. radar system aircraft Incorporated Attack air-to-ground Division Instruments Light mapping, weapon Instruments Texas a unique Aeronautics close-support to Texas dollars a million announced

of Ling-Temco-Vought

Officials for the A- 7 A Navy of radars for development is scheduled RELEASE FOR IMMEDIATE NEWS RELEASE DALLAS TEXAS DALLAS, • EXPRESSWAY CENTRAL NORTH 13500 subsystems for the F-11 lD production

will be the first compatibility.

-30MAILING

ADDRESS POST OFFICE BOX 6015 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • TWX 214-231-1492 • TELEX 073-324 Jack Briner, 8/7/64. NEWS RELEASE NEW PRODUCT RELEASE FOR IMMEDIATE Ext. TEXAS INSTRUMENTS INCORPORATED PRESSURE HOUSTON, TEXAS, the gage into to facilitate integrating cali.bration systems. Dimensions weight

is approximately

inches deep; by the ndustrial Fused quartz measured parts to within tube one part ranges

in 100, 000 over

in a flush style with convenient chassis data computers and 19 inches wide, 12 inches high, 30 pounds. The air existing are rackslides 12

is manufactured

gage Group. Products Bourdon now available is equtpped The new unit enclosure. mounting are Gages Pressure Preci.si.on Quartz Fused Instrtrments

• Texas

7, 1964 - (Special)

August BY TI ANNOUNCED RACK-MOUNTING FOR GAGE TEXAS HOUSTON, DIVISION APPARATUS PRECISION • SPEEDWAY BUFFALO 3609 gages are Manager, Texas Instruments, Houston, Texas 77006. resolution

up to 500 psi..

of pressures are

Repeatabi.li.ties

in 100, 000.

wi.thi.n two

and servo-nulling

Manual mere information, write Industrial Produc s Group, For available. instruments high feature the Marketing Box 66027, P.O.

-30-

MAILING ADDRESSPOST OFFICE BOX 66027 • HOUSTON, TEXAS 77006 • JACKSON 6-1411 • CABLE: TEXINS 358 Ext. Jack Briner, 8/7/64. 358 INSTRUMENTS TEXAS INCORPORATED • SPEEDWAY BUFFALO 3609 FOR TEXAS, HOUSTON, pulse describing memory exercising Products Group. The capabili.ti.es are included. For a copy, Industrial data for Texas from is available Logic diagrams the Marketing Manager, Texas Products Group, P. 0. Box 66027, and tests Industrial Instruments

up to 20 megacycles.

write published system handling handling data requring applications communicat-lon discusses article SYSTEMS of a recently

7, 1964 - Reprints

generators RELEASE IMMEDIATE GENERATOR DAT A HANDLING TESTING August FOR PULSE DESCRIBES REPRINT article AVAILABLE INFORMATION TECHNICAL TEXAS HOUSTON, DIVISION APPARATUS

and performance

Incorporated, Instruments Houston, Texas photos 77006.

-30-

MAILING ADDRESSPOST OFFICE BOX 66027 • HOUSTON, TEXAS 77006 • JACKSON 6-1411 • CABLE: TEXINS )217)\ NEW PRODUCT NEWS RELEASE FOR ISA SHOW ISSUES Jack Briner, 8/7 /64. ~ Ext. TEXAS INSTRUMENTS INCORPORATED 3609 BUFFALO SPEEDWAY • APPARATUS TI INTRODUCES NEWEST TEXAS, August ?, potentiometric time at the ISA Show in New York recoyder, servo/riter by Texas Instruments Industrial features a completely transistorized conductive choppe:r servo system conventional and infinite provide smal signal 1% oi full less 1/10%. Pen speeds response resistance interference

• Industry's

II, will October Products Group, resolution newest be shown 11-15, ampl•;_fier, strip- for the first 1964. Manufactured the all-new recorder nonmechan;cal photo- sli.dewi.re. The

characteristics

amplifier not usually and found i.n is 5 cycles rating rejection scale. from per is specified FEATURES is obtained re solution of. circuit ISA PERFORMANCE changes frequency AT RECORDER, instruments. detecting than City, performance OUTSTANDING Exceptional II,

1964 - (Special)

chart TEXAS STRIP-CHART SERVO/RITER HOUSTON, HOUSTON. DIVISION with 1/ 4% accuracy Deadband is almost

. 4 to 24 seconds

are

second

at 10% of full

at 25, 000 ohms.

nonexistent, available. Dynamic scale. External Longitudinal a-c

is 100 db minimum. -more-

MAILING ADDRESSPOST OFFICE BOX 66027 • HOUSTON, TEXAS 77006 • JACKSON 6-1411 • CABLE: TEXINS 358 .. Page Two TI Introduces Newest Recorder, Servo/Ri.ter Strip-Chart II, at ISA QUALITY DESIGN Quality materials and components provide longer

li.fe and reli.abili.ty.

utili.zes PC board life, and needs of cycles. Rugged only selected The to have die castings new front is all and wear surfaces The slidewi.re has the contacts changed after provide closer II to solid tolerance, state, use long- infinite millions better CONVENIENCE servo/ri.ter II recorder and a wide selection of options for span, zero-position and

-suppression.

features thumbwheel chart adva panel change chart optional controls carriage tilt-out Inkwells are optional and easily on PC boards transmissions, are servo/ri.ter assemblies. features off, for amplifier PLASTIC. OPERATOR The CONSTRUCTION Bearing ACETAL resolution fitting are construction. qui.et-running AND available writing removeable; which offers platen rear many

and interchangeable

door hinges Selectable conveniently plug internal convenience

and accessories.

removeable. penlifters, built-in for There Quick- ce, chart tear- chart motors. front door access; input are circuits are mounted into the amplifier. Chart lighting, paper indicator options.

-more-

supply

is

..

Page Three TI Introduces Newest Strip-Chart Recorder, Servo/ Riter II, at ISA

A The servo/riter II is a complete flush-mounting models six channels. Basic mounting information, Industrial d-c COMPLETE Products recorder line offering portable chart styles from

in wi.de and narrow price

potentiometer wri.te LINE of a si.ngle is $840. the Marketing Group, P. 0. channel, 00 FOB Manager, Box 66027,

-30-

wide chart, one to flush- plant. For Texas Instruments, Houston, and more Texas 77006. INSTRUMENTS TEXAS INCORPORATED CORPORATE RESEARCH OFFICES, 13500 • BUILDING NORTH EXPRESSWAY CENTRAL DALLAS, • TEXAS FOR IMMEDIATE RELEASE NEWS RELEASE

TEXAS INSTRUMENTS DELIVERS FIRST RADAR SUBSYSTEM FOR F-lllA DALLAS,

Texas Instruments Incorporated has del lvered to

August 12--(Special)--

General Dynamics/Fort Worth the first prototype of a unique forward-looking radar for the F-lllA

advanced fighter, designed to fly 2-1/2

The F-111

aircraft.

speed of sound, is built by General Dynamics for the Air Force and Navy.

times the The Air

and the Navy F-lllB.

Force designates it the F-lllA,

Purpose of the Tl radar is to allow safe penetration of enemy radar defenses at very low altitudes above the terrain, safely

by automatically controlfing the F-111

following a contour of the earth's surface thereby avoiding detection. subsystem provides the highest reliability

The F-lllA

of any similar radar of

A feature of the radar is that it continuously checks its own

comparable complexity.

operation and, sensing any marginal operation or failure, automatically directs the Plug-in modular design gives the radar extremely good

aircraft to a safe altitude. mai ntainabi I ity.

Several modes of operation are available including terrain-following

flight at

selected low altitudes which is accomplished by use of an analog computer that generates These signals are displayed on an indicator so that the pilot can

climb-dive signals.

follow a terrain profile.

Ground mapping of the terrain ahead of the aircraft assists the

Blind let-down to low altitudes is safely accomplished by selecting

pilot in navigation.

the desired altitude on the radar control. radars have reached a stage of maturity that enables

Tl said that terrain-following

them to lend their function to diverse application from ultra-high-performance aircraft (such as the F-lllA)

to helicopters.

• 30 -

MAILING ADDRESS, POST OFFICE BOX 5474 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE, TEXINS Jack Miller Extension 1206

NEWS RELEASE NR113 FOR RELEASE AUGUST 17, 1964

TEXAS INSTRUMENTS INCORPORATED SEMICONDUCTOR BUILDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

• DALLAS.

TEXAS

DIVISION

NEW Tl INTEGRATED CIRCUITS ANNOUNCED FOR SEVERE-ENVIRONMENT

DALLAS, August 17 processed

especially A family of low-power for severe-environment circuits*

Series 51 I ine.

Incorporated,

high-temperature

storage,

In addition

temperature

Series 51 R network

is subjected tion in the critical Y graphic using Tl's extensive will be an Dal las. to the regular cycling,

to a centrifuge

that are tested and

and space applications

Series 51 R, the family of 15 SOLID CIRCUIT®

para I leis Tl's standard includes

integrated military

nounced at WESCON by Texas Instruments

Designated

APPLICATIONS

semiconductor

Series 51 processing

and hermeticity

test involving networks 20,000-G which checks, each constant accelera

plane for one minute. Other Series 51 R special processing consists 1 of dynamic operation -burning-in each unit at 125°C for 168 hours -and a careful radio inspection

Price adder to standard $5. 00 per network

X-ray facility.

Series 51 units for the severe-environment

in quantities Units now available in-house processing up to 999. in the Series 51 R family are: SNR51 0A - Flip-flop/Counter SNR511A - Flip-flop/Counter

with Emitter-follower

• more -

*

Patented

MAILING

by Texas Instruments

ADDRESSPOST OFFICE BOX 5012 Incorporated • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS is

Tl Integrated Circuits for Severe-environment Applications Page Two

SNR512A -

NOR/NAND Gate

SNR513A -

NOR/NAND Gate with Emitter-fol lower

SNR514A - Dual NOR/NAND Gate SNR515A - NOR/NAND EXCLUSIVEOR

SNR516A -Triple

Gate SNR517A - Clock Drive SNR518A - One Shot SNR519A -

Pulse EXCLUSIVEOR

SNR5101 -

Flip-flop with Dual Presets

SNR5102 -

Flip-flop with Dual Presets and Emitter-fol lower

SNR51l 2 -

Ripple Counter Flip-flop

SNR5161 -Triple

2-input NAND/NOR Gate

SNR5162 -Triple

2-input NAND/NOR Gate with one Emitter-fol lower

• 30 -

(enc..\,It A\Jj, \"\64, .;.e.c- P.c.P"'-cio

• Col\, f'\:>I

or,' [,-s- --:i,-A~~,;.,:;\4~\ c,,c..vi"ts •' ]

.

-J

Jack Miller Extension 1206 NEWS RELEASE NR 114 FOR RELEASEAUGUST 17 INSTRUMENTS TEXAS INCORPORATED • BUILDING SEMICONDUCTOR CENTRAL NORTH 13500 DIVISION SERIES OF LOW-POWER RTL Tl ANNOUNCES SEMICONDUCTOR

DALLAS, August 17 -

NETWORKS AT WESCON

A series of low-power

double-epitaxial

featuring advanced

integrated circuits in the mi II iwatt range Dallas. digital circuits with guaranteed

The new series includes seven NANO/NOR

Howard

range of -55 to 125°(.

through the full military temperature compatibility will be structures and a choice of packaging

at WESCON by Texas Instruments Incorporated,

announced TEXAS DALLAS. • EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

Circuits

Moss, Tl assistant vice president and general manager _of the firm's Integrated indicated

department,

with propagation

per stage,

nanoseconds.

delays typically

of all seven circuits

A major feature of the series, Moss said, is the availability either in Tl's standard

10-lead flat pack or in a modified TO-5 package -

price differential

between the two packages.

the flat pack.

The network bar is fabricated

epitaxial

2 to 5 milliwatts

for the series is typically

that power dissipation

with no

An 11A 11 suffix to the type number indicates in each case using planar-diffused

double SN730/730A buffer, techniques. adder,

Types in the new RTL series include the SN729/729A SN73l/731A

dual 2-input gate, SN734/734A half-adder, SN732/732A and SN735/735A

Pricing in smal I quantities

-

expander gate, SN733/733A 4-input gate, register. 25 pieces - is typified by the dual 2-input gate at

$14.20.

• 30 (caption next)

MAILING ADDRESSPOST OFFICE BOX 5012 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS Page two Tl Announces Low-power TRL Semiconductor Networks PHOTO CAPTION

Al I seven of Tl 1s new low-power package

RTL networks are available

(left) and the industry standard flat-pack (right). in both the modified TO-5

[tVlc..\' \7 A.V'J. l ~ U-1 I 5-e_e__ f,(2_.f 'nu-to ,C...,c- l\.

[ L.~>.vYowe.

-\12-L-

'?eV'-'-\l-<>"'-~vdo<

L, r

Ne.-t~ork.sJ

O .--~ ·l Jack Miller Extension 1206

NEWS RELEASE NRl00 FOR RELEASE AUGUST 24, 1964

TEXAS INSTRUMENTS INCORPORATED SEMICONDUCTOR BUILDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

• DALLAS.

TEXAS

DIVISION

ALL-PLANAR PNP CHOPPERS WITH EPITAXIAL BASE ANNOUNCED

LOS ANGELES,

August 24 -The

semiconductor

si Iicon chopper transistors were announced ments to the NPN 2N2432,

industry's

first planar-epitaxial

here today by Texas Instruments.

the new devices are available as the 2N2944, base PNP PNP comple 2N2945 and 2N2946. The planar construction advantage

of the new choppers offers the circuit

over older alloy and electromechanical

ruggedness of the planar construction, acteristics.

Breakdown voltage

In addition

to the extreme

the 2N2944 series offers improved electrical

char

is 40 volts minimum, while ICBO is 25 nanoamps maximum

at 100 degrees C, and offset voltage is packaged

types.

designer a considerable

is 0.8millivolts

maximum at 200 microamps.

The unit

in the TO-46 case.

Texas Instruments states that more than thirty older alloy and electromechanical of choppers can be replaced Prices of the units, Devices are immediately Additional

information

Tl distributors,

by these new planar choppers.

in one to ninety-nine

quantities,

range from $8.00 to $13.88.

avai Iable from stock and through authorized

Tl distributors.

on the 2N2944 series is avai Iable from Tl field sales representatives,

or direct from Tl, Dallas.

• 30 -

MAILING ADDRESStypes POST OFFICE BOX 5012 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS CUT LINE: ALL-PLANAR PNP CHOPPERS

These three T0-46

transistor packages

PNP choppers with epitaxial 2N2946. base. contain first all-planar

They are Texas Instruments 2N2944,

The new choppers offer both electrical older alloy and electromechanical the industry's and mechanical

types of choppers.

silicon 2N2945 and advantages over

[e.v1d '# l.) ?..l-J A.v'j· ll'.H0'-\,,e.e-P,R. \}ho-\,, (.J\,('t>("

D•;:;·l .Ji " • -=• _.. 4tJ

WESCON NEWS RELEASE FOR RELEASEAUGUST 24, 1964

' TEXAS Jack Mi Iler, Ext. 1206 INSTRUMENTS INCORPORATED SEMICONDUCTOR BUILDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

TWO MONOLITHIC ANNOUNCED DALLAS, Aug. 24 -· featuring

• DALLAS.

TEXAS

DIVISION

BROADBAND AMPLIFIERS

BY TEXAS INSTRUMENTS

rwo highly versatile

differential

amplifiers

l 0-mc bandwidth and 36-db gain were announced

in integrated-circuit

form

here this week by Texas Instru

ments Incorporated. Typed as SN458 and SN476, Charles Phipps, Tl's Integrated in terms of frequency

the new low-level

epitaxial

Circuits marketing manager, 11

response and gain.

circuits were described

as "high-performance

Typical frequency

bandpass characteristics

is typically

for signal-generation

This second section of the circuit tion -

4 mv.

capacitance-coupled

offers a typical gain of 51 db single-ended

fore overloading

is typically

or differential

for a large number of applications. receiving

and 42 db differential.

alternative,

output provides

in the 3 to 8 megacycle to the direct-coupled signals from thin-film first sec

and 57 db differential.

Input signal be

inputs and outputs in both stages,

and can be applied

amplifier.

This versatility

makes the circuit useful

A major use cited by Phipps is that of a sense amplifier,

memory circuits and amplifying

them to a level which will

(more) MAILING ADDRESS: POST range. 2 mv.

The network features differential either as a single-ended

A second, applications networks response of the two amplifiers

is from de to a 10-mc 3-db point; typical gain is 36 db single-ended Input signal before overloading

by OFFICE BOX 5012 , DALLAS TEXAS 75222 , ADAMS 5-3111 , CABLE: TEXINS page two Two Monolithic

Broadband Amplifiers Announced by Texas Instruments

trigger logic circuitry. pulse amplifier,

of the circuit also make it adaptable

The unique characteristics

as a

he added. Supply

Input and output impedance to the SN476 are 2000 and 600 ohms, respectively. voltages are+ 4.5 volts and -6 volts (drawing 19 ma), and power dissipation Overload recovery time for 100-mv input is 100 nanoseconds. The SN458 features circuit characteristics pedance for sense-amplifier

applications

identical

is 200 mw at 25°C.

Common-mode rejection

is 60 db.

to the SN476, adding low-input im

and a separate

input ground terminal for avoiding

monolithic

"Master Slice" bar for the two circuits

ground loops and ground noise. The highly complex silicon epitaxial contains 50 diffused components,

including 17 npn transistors,

resistors ranging in value from 20 to 10,000 ohms.

two 60-pf capacitors

and 31

A large number of customized "Master

Slice" circuit variations can be produced quickly and economically

simply by changing the

pattern of deposited aluminum interconnections. sealed in Tl 1s industry-standard

Both circuits are hermetically

flat package,

measuring

1/ 4 by 1/8 by 1/32 inch, and weighing O. l gram. The new SN458 and SN476 units supplement Tl 1s catalog networks, including the "Series 52 uteman Series,"

11

operational

amplifiers and the linear units of the "Min

which include four general-purpose

a driver switch.

• 30 -

lines of linear semiconductor

amplifiers,

a demodulator chopper,

and

[ e"'-'-

':2~

Avj

[~I O /,..J b

,i

Cv"-

\c101.-\ i'><'e.

ll t:\V""-v' 1 '\· f1, ) ()h fil.( ~J

NEWS RELEASE NR104 FOR RELEASE AU GUST 24, 1964

Jack Mi Iler Extension 1206 ~ IN STRL TEXAS \1 E~TS INCORPORATED SEMICONDUCTOR BU LDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

CLOSE-TOLERANCE

• DALLAS

TEXAS

DIVISION

AND CHOPPER FIELD-EFFECT TRANSISTORS ANNOUNCED

LOS ANGELES, transistors units,

August 24 -Texas

here today. The three devices with important is a P-channel Instruments

design parameters

chopper field-effect The close-tolerance announced two series of field-effect

of one series are described tightly

transistor

control led and guaranteed.

units were developed

by Tl in answer to the needs of circuit

signers who have found older types of FET s not characterized

voltages, circuitry. The new P-channel closely characterized. typical); low c 155 Tl transistors tightly Electrical

characteristics

(3 pf, typical);

have guaranteed

equivalent

noise

design parameters

of the new FET's include low noise (0.15 microvolts de enough for more

at O. 6 na maxi mum, and al I other important

IGSS guaranteed

The other series (TIS05). 1 sophisticated as "close-tolerance" low IGSS (0.3 no,

per cps 1/2); and 3 to 1 Yfs

range. Applications capacitance

requiring

choppers

can best utilize

of the nature of field-effect

that offer low leakage,

the new P-chonnel devices,

chopper

low "on" resistance,

field-effect

offset error is minimized

transistors.

of the device

is only 90 ohms, and yf/CISS

giving performance. So~e of the circuitry includes choppers, analog switches, and high-gain Because

when the TIS05 is used.

Typical value for "on" resistance improved high-frequency and low

is very high,

using these units

amp I ifiers.

• more -

MAILING ADDRESSPOST OFFICE BOX 5012 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS Close-tolerance Page 2 and Chopper Field-effect

Both of the new Tl field-effect available

for immediate delivery

Transistors

devices are packaged

from stock. in the 4-lead Prices are: 1-99 100-999 2N3573 $21 .75 $14.50 2N3574 17 .25 11 .50 2N3575 18.60 12.50 TIS05 30.00 20.00

• 30 -

T0-18, and are Jack Miller Extension 1206

NEWS RELEASE NR109 FOR RELEASE AUGUST 24, 1964

INSTRUMENTS

TEXAS

INCORPORATED

NEW Tl GLASS "DERBY" DO-4 SILICON

in an advanced

single

a new 3000-volt

Instruments today announced which permits high voltage operation package at

high altitudes.

extremely

series can pay off in space savings ranging up to 80%

the new Tl l N4537-40

DO-4 outline, when used in high-voltage described The new package,

Reduced component

stacks and bridges.

as a glass 11derby 11 design,

operation

in rarefied

construction

single-junction

-

The new 1 N4537-40 distributors,

series, This permits rectifiers. capability rectifiers

through Tl sales offices and authorized

is priced as follows: 100-999 1 N4537 n~ 1 N4538 12.10 1 N4539 13.60 1 N4540 15.30

• 30 - (Caption

MAILING

ADDRESSPOST OFFICE BOX 5012 • DALLAS. TEXAS Next) 75222

-

and provides a low forward drop

forward current rating of 3 amperes. available

feet.

missile and space applications.

rare in such high-voltage

assures added dependabi Iity, reduces power requirements of 1 .85 volts peak at the average

increases the arc-over

high rel iabi Iity and high altitude

well suited to aircraft,

makes the new Tl units particularly Diffused,

ratio,

of high voltage-to-size

This combination

increased

up to 2500 volts as high as 70,000

-

atmosphere

greatly

DO-4 top-hat

between terminal and case over conventional

high-voltage

count,

and lower cost can also be achieved.

through fewer interconnections,

reliability

meeting the JEDEC

ratings from 1500 to 3000 v~lts in a package

By providing voltage distance RECTIFIERS CAPABILITY AT HIGH ALTITUDES PROVIDE HIGH-VOLTAGE

LOS ANGELES, August 24 -Texas

TEXAS

DALLAS.

DIVISION

SEMICONDUCTOR-COMPONENTS

junction silicon rectifier • EXPRESSWAY CENTRAL NORTH 13500 • BUILDING SEMICONDUCTOR • ADAMS 5-3111 • CABLE: TEXINS PHOTO CAPTION:

NEW 3000-VOLT SILICON RECTIFIER IDEAL FOR HIGH-ALTITUDE OPERATION Developed by Texas Instruments for high-voltage, derby

11

11

junction,

silicon rectifier offers 2500-volt diffused rectifiers,

designated

yet meet the standard DO-4 outline. and case permits high-voltage

operation,

this new glass

capability

up to 70,000 feet.

l N4537-40,

are rated from 1500 to 3000 volts,

Greatly operation high-altitude increased arc-over

in rarefied atmospheres.

The new single

distance between terminal

[el'\£.\, ~ 2-) ~'1 ~\Jj

I

1q(,I,.,\]~

r,.e.,p~6"\-.,C.-\1, or,

NEWS RELEASE NR103 FOR RELEASE AU GUST 24, 1964

Jack Miller Extension 1206 TEXAS INSTRUMENTS INCORPORATED SEM !CONDUCTOR BU I LOI NG • 13500 NORTH CENTRAL

SEMICONDUCTOR-COMPONENTS

ECONOMY EXPRESSWAY • DALLAS. TEXAS DIVISION PNP AND PLANAR UNIJUNCTION TRANSISTORS INTRODUCED BY Tl LOS ANGELES, transistors, August 24 - designed Silicone-plastic-encapsulated

for use in consumer and industrial

today by Texas Instruments.

Part of Tl's "Silect"*

total of 23 different

types currently

"Silect" The planar unijunctions cations, including rugged, applications, transistor line, and PNP were announced the new devices here make a available. TIS02) are designed motor speed controls,

They are extremely package.

(TIS0l,

planar unijunction

for use in a wide variety

waveform generators,

electronic

due both to the planar construction

organs,

and to the silicone

Designers using the devices wil I have the added advantages

of appli and timers. plastic

of high intrinsic

standoff ratio (0.68 minimum, 0.82 maximum in the TIS02) and low leakage

(10 ma, maxi

mum). PNP "Silect"

units,

introduced

complementary

symmetry circuits

are designated

Tl TIS03 and TIS04.

for the first time, will find wide applications

and for medium-power Dissipation amp I ifiers. in The new PNP units

is 300 mw, and BVCBO is 1550 volts

(TIS04). Additional information Tl field sales offices, on the new additions authorized

Tl distributors,

to the "Silect" or directly

line is available

from Texas Instruments,

• 30 -

*

Trademark,

MAILING

ADDRESS

Texas Instruments

POST OFFICE BOX 5012 Incorporated • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS

from Dal las.

Jack Miller Extension 1206

NEWS RELEASE NRl 11 FOR RELEASE AU GUST 24, 1964

TEXAS INs-rRUMENTS INCORPORATED SEMICONDUCTOR BUILDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

NEW HIGH-CURRENT GERMANIUM August 24 -A for cost-critical, h;gh-power new series of 50-amp industrial DALLAS. TEXAS

POWER TRANSISTORS

IN ADVANCED TO-3 PACKAGE INTRODUCED LOS ANGELES, • DIVISION BY TEXAS INSTRUMENTS germanium

power transistors

power supplies was announced

designed

here today by Texas

Instruments. Typed as TIG05-TIGlO, 20 to 80 at le=

(9J-C = 0.5 C 0 /watt) as particularly

are additional important high-power operating to power-supply

larger TO-36 transistors.

power dissipation

at minimum junction voltage low thermal resistance engineers

designers. will permit the design of more

formerly possible only with more expensive

Their low thermal temperature, allowing and higher reliability reduces power losses and thus increases

power supplies.

Low saturation cited by Tl application advantages and inverters

and significantly

beta ranging from

case temperature.

offered by these devices converters in many linear series regulators at 25°(

18 = 3 amps) and exceptionally

30 amps, The high current capability economical offer a high guaranteed 30 amps and 150 watts dissipation (O.5 volts at le= voltage the new transistors resistance

assures maximum

a reduction

of circuit

in any application.

circuit

efficiency

High beta at high current pays off in increased

-

components Low saturation especially efficiency in low-voltage at any voltage

level. The new TIG05-TIG10 construction. cold-weld

series features

The basic package hermetic a new TO-3 package

is a disk-shaped

seal for high reliability.

with all-copper, cold-weld assembly which permits a concentric The new package,

first introduced

with the (more) MAILING ADDRESS: POST OFFICE BOX 5012 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS Page two New High-current Germanium Power Transistors

Dallas firm's Tl3027-3031 series, devices.

These are reflected results in substantial cost savings over comparable T0-36 in the following prices: T0-3 100-999 T0-41 100-999 TIG05 $ 2.90 TIG08 $ 3 .15 TIG06 3.70 TIG09 3.95 TIG07 3.90 TIGlO 4.15

• 30 -

CAPTIONNEW 50-AMP GERMANIUM POWER TRANSISTORS IN ADVANCED T0-3

PACKAGE ANNOUNCED

A new series of 50-amp germanium power transistors combines, characteristics

formerly available

only in larger,

by Texas Instruments for cost-critical a new cold-weld

in a new Tl-3 package,

more expensive T0-36

industrial applications,

QJ-C = 0.5 C 0 /watt).

devices.

the TIG05-TIG10

T0-3 package providing high power dissipation

and very low thermal resistance

BY Tl

Developed series features

(150 watts at 25°C case)

[ e\-"\L.-\.2-H A.\J:j. '0 (, '-\ I 7ee.

[b

M,,A-""

·1-.,""'

fowe(

f, a... Pho-i:"'.(..,l I' C:01 6•

J

\<""WV'-s; ~-\ t>r

I. i

1 -~

7 Don Scharringhausen Extension 593

NEWS RELEASE NR5922 FOR RELEASE AUGUST 24, 1964

TEXAS INSTRUMENTS INCORPORATED SEMICONDUCTOR BUILDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

• DALLAS. TEXAS DIVISION TEXAS INSTRUMENTS FEATURES NEW MULTI-FUNCTION LOS ANGELES, August 24 -

INTEGRATED CIRCUITS AT WESCON

Focal point of the Texas Instruments participation

WESCON Show was the announcement

of 11 new SOLID CIRCUIT®

which combine two, three or four circuit functions multi-function

networks are in four different

Describing

the new networks,

of the Semiconductor-Components functions in a single package

Cecil semiconductor in a single monolithic networks*

bar of silicon.

The

logic families. P. Dotson, Tl vice president

division, effectively in 1964 1s Dallas, and general manager pointed out that placing several circuit reduces the cost per circuit function, thus reducing

system cost while improving system reliability. Dotson explained

that substantial

smaller number of network packages packages mean fewer external problems.

Fewer packages

built simultaneously

improvements

required for a given system.

interconnections

in a single structure in the packaging number of circuit functions step-function decrease competitive with discrete result from the Fewer multi-function and fewer opportunities

for reliability

also mean lower system cost, since three or four circuits

over that required to build one circuit. accumulated

in cost and reliability

stage,

with only a nominal manufacturing

cost increase The bulk of network manufacturing costs is and these costs are virtually

performed by the bar.

in the effective components The result, cost of integrated fixed regardless of the Dotson said, circuits, is a dramatic

making them fully

for most applications.

(more)

• Patented by Tl

MAILING

ADDRESSPOST OFFICE BOX 5012 • can be DALLAS TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXIN5 New Multi-function Page 2 Integrated

The new multi-function Series 53 medium-power

Circuits

networks include units in Tl's Series 51 low-power

line, plus two new series of networks using the high-speed

DTL logic configurations. full military temperature

Al I these network I ines, with one exception,

NAND/NOR

fol lower outputs,

first introduced

with dual presets,

additions to the medium-power

are the SN5360 quad 2-input

SN1005 "One Shot."

NAND/NOR NAND/NOR 53 AND/OR/INVERT gate,

The 15 compatible

Series 53 line of modified DTL networks

the SN5331 triple 3-input

made available

networks with propagation

outputs.

capacity-driving

NAND gate and the S N743 8-input

NAND/NOR

delays of 5 to 45 nsec.

gate,

Multi-function

and fan-out of 15 are the SN742

approach

include the SN472 dual gate which provides three

The new double-epitaxial

power drain of 5 to 15 mw per stage,

and noise immunity of 1 volt at 25°C.

(more)

networks are the

NAND gate.

and the SN473 AND-NOR-NAND

range is 0° to 125°C.

The Series

Other double-epitaxial

levels of logic in a single package.

temperature and the provides 25-nsec propagation capability

Special DTL gates that employ the multi-function 3-input

gate,

to industry in late 1963 -now

gate and the S N678 quad NAND gate.

TTL networks that offer excellent

NAND/NOR

flexibi Iity to the equipment designer.

600-mv noise immunity, and single-ended

dual 4-input

up to 20.

series in the TTL logic configuration

S N676 dual NA ND/NOR

circuits in

the SN5370 dual "EXCLUSIVE OR" gate,

logic offers considerable

A new high-speed delay, gate, The Series 53 line -first includes a total of 11 compatible at WESCON are

the companion SN5 l 11 with dual presets and emitter

Series 51 feature power drains as low as 2 mw and fan-out

the SN5311 dual 5-input

in 1961, include the SN5161

Other Series 51 networks announced

and the SN5112 ripple-counter/flip-flop.

Multi-function

operate over the

gate and the SN5162 which is the same unit plus an emitter

follower output for one of the gates. the SN5101 flip-flop

TTL and

range (-55° to +125°C).

Four additions to the Series 51 RCTL line, triple 2-input

line,

DTL networks feature typical Operating

New Multi-function Page 3 Additional Integrated

semiconductor-network

a total of 37 new types ration,

Circuits

catalog types announced

include a Iine of seven low-power digital

and a group of fifteen Series 51 units that have undergone

for severe environmental

making

circuits in the RTL configu

special processing and testing

applications.

New linear semiconductor offering frequency

by Tl at WESCON -

networks from Tl are two broadband differential

response from de to 10 me, and two new general-purpose

amplifiers,

amp Iifiers that

supplement Tl's Seri es 52 Ii ne . The addition of these new networks brings to 73 the total number of catalog semiconductor networks offered by Tl .

• 30 -

~Vic.I,#'

r) ,Z.!...\Av~-(1(.t.T}

[Ne.~n01+~- '1"'c ,t,vt. ·1

FUNCTIONAL Simple Version Three packages 24 Interconnections REQUIREMENT: TWO EXCLUSIVE OR'S Multi-function Version One package 12 Interconnections Vee ' I r------L-----, I I I NET SAVINGS TWOPACKAGES (67o/oFEWER)

-,-_J

12INTERCONNECTIONS (50°~ FEWER)

I

-½ Vee? I

r--1-7 I I I L----,-----J I

-½

Illustration of specific savings in packages and interconnections resulting from the use of multi-function semiconductor networks. Since the network at right effectively performs six NAND functions, package count is reduced from three to one. Because these functions are all internally connected and use common supply and return terminals, twelve connections are eliminated. These sav,ings are to be expected because the concept of multi-function semiconductor networks is simply a fuller realization of the basic integrated circuit concept, now made possible by significant advances in process control and design experien ce.

Dual Gate Triple Gate r.---, J Quad Gate

Effect of multi-function networks on cost per circuit function. This chart shows that the user cost (value) of a gate is essentially constant when considered in a discrete component form ($5 per assembled gate is a typical value for military systems.) Assuming no price breaks, four gates cost four times as much, or $20. The second line shows that fabricating a 4-gate network costs only 20 percent more than a single-gate network. This results in an effective cost reduction to $3 per gate for large military systems (-55 to 125° C) today.

--

1. l L- 1.0 $10 L----J Relative Network Manufacturing Cost Equivalent Cost per Circuit Function to User .J $5 L ___ r---, r:---7

ptIT >l =DfDt- D+- ii ~ ! =P+ D+- D+-

Single Gate Value to User Network Package Content v' s \ • l • (', I := ;~ ~

> <::

~

t-J

~

-

'S

c-

,.l-

-

C. ;!.~ t~ . :s

--:,

r.

[ e""', # 3 >,ii.~ /\vj, \qeo'

[N~\.,)\''t;\ ~ vn,.),;t,.

t, INTEGRATED CIRCUIT PRICE TRENDS z 0 1- u z => u. I- u=> u e:::: e:::: w a..

DUE TO MFG. COST REDUCTIONS ONLY (IMPROVED YIELDS, PROCESS IMPROVEMENTS,

ETC.)

\ -------

DUE TO MULTI-FUNCTION APPROACH PLUS MFG. COST REDUCTIONS

1- Vl 0 u TIME

Chart of current integrated-circuit price trends, showing downward step-function effect of multi-function networks. Process cost reductions for any semiconductor product come gradually when - as is true for integrated circuits - the early, steep portions of the cost curve have been passed. Such reductions result from improved process controls, improved labor efficiency, and mechanization

• al I

of which require the gradual accumulation of experience. The downward step in cost per circuit function created by multi-function semi conductor networks brings integrated circuits into a price range now fully com petitive with discrete components, a price range which would have taken three or four years to reach through direct process cost reductions alone. Of course, multi-function networks will also benefit from gradually improving process costs until the time when process technology allows yet another step in the curve, and so on.

J Jack Miller Extension 1206 NEWS RELEASENR 108 FOR RELEASEAUGUST 24 I~ STRL TEXAS \I E~TS INCORPORATED BUILDING SEMICONDUCTOR • Tl ANNOUNCES ' EXPRESSWAY CENTRAL NORTH 13500 TEXAS DALLAS DIVISION

SEMICONDUCTOR-COMPONENTS

NEW SI LICON CONTROLLED RECTIFIERS

WITH ALL-PLANAR CONSTRUCT I ON FOR HIGH RELIABILITYAPPLICATIONS

silicon controlled

new series of all-planar

LOS ANGELES, August 24-A

rectifiers for

switching applications

was introduced here today by Texas Instruments

EIA-registered as 2N3555-3562,

the new PNPN semiconductors are rated at one

high-reliability Incorporated.

amp, 30 to 200 volts, and are packaged in the standard JEDEC TO-5 outline. The series features Tl's all-planar by an oxide passivated surface -

construction

in which every junction is protected

not offered in conventional

an advantage

diffused,

SCR's.

al Icy-diffused and partially planarized

include high turn-on gain (I = 20 f-la and 200 f-la for gt If= 1 amp); high surge current capability (18 amps); fast switching speed (tOFF = 3.5 fJSec); Electrical characteristics

High leakage

and very low leakage (If= 20 na, IR= 100 na at 25°C rated voltage).

stab ii ity under d-c blocking conditions helps assure reliable performance under high-stress levels of operation. Applications Nixie®

shift registers,

include squib firing and fusing circuits,

drivers, d-c pulse sweep circuits, drivers, pulse generators, timing and delay circuits, ring counters, current sensing, relay

hammer drivers and power flip-flops.

Available through Tl sales offices and authcrized series is priced as follows:

the 2N3555-3562

Tl distributors,

'gt = 20 f-la 100-999 lgt = 200 f-la 100-999 2N3555 2N3556 2N3557 2N3558 S4. 95 4.95 7.45 9.45 2N3559 2N3560 2N356 l 2N3562 S3.83 4.10 5 .75 6.33

• 30 MAILING

ADDRESSPOST OFFICE BOX 5012 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS ~

NEWS RELEASE NRl 10 FOR RELEASEAUGUST 24, 1964

Jack Miller Extension 1206 INSTRUMENTS TEXAS INCORPORATED • BU I LOI NG $EM !CONDUCTOR DIVISION

SEMICONDUCTOR-COMPONENTS

RECTIFIER

GLASS-ENCAPSULATED

NEW ONE-AMP TEXAS DALLAS. • EXPRESSWAY CENTRAL NORTH 13500

INTRODUCED BY TEXAS INSTRUMENTS RELIABLEAND ECONOMICALLY

IS COMPACT,

glass-encapsulated

new one-amp LOS AN GE LES, August 24 -A si Iicon rectifier advantages

by Texas Instruments is said to offer significant

introduced

PRICED

over conventional

flange less and epoxy types.

top-hat,

The new Tl rectifiers

-

1 N4383-85

designated

-

provide high current capabi Iity hermetically

(1 amp continuous at 100°C, 50 amps surge) in a cylindrical, Peak reverse voltage ratings range up to 600 volts.

package.

the new units measure only .150" x

applications,

Well suited for space-critical

rated top-hat

. 360" and are up to 80% smaller than comparably insulated

sealed glass

package

(which eliminates

leads, and the absence of protruding the need for insulating A fully rectifiers.

sleeves or washers),

flanges permit high-density packaging weldable for additional

space savings. combined with both high rel iabi Iity and low

Because of these size advantages, price,

the new glass rectifier

applications

to find wide usage in consumer and industrial

is expected

as well as military equipments.

The 1 N4383-85

through Tl sales offices and authorized

series is available

at the fol lowing prices: MAILING ADDRESS. POST distributors 100-999 OFFICE BOX 1N4383 $0.34 1N4384 0.41 1 N4385 0.54

• 30 - (Caption

Next) 5012 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS PHOTO CAPTION:

GLASS ENCAPSULATION

PROVIDES POSITIVE

HERMETIC SEAL FOR TI'S NEW ONE-AMP

SILICON

RECTIFIER

Positive protection

against moisture is a key feature of Tl's new glass-encapsulated

silicon rectifiers.

Significantly rectifiers, smaller than conventional top-hat,

the new 1N4383-85 units are wel I suited for high-density

one-amp

flangeless and epoxy packaging.

They require

no insulating sleeves or washers and have no protruding flanges to prevent close-proximity mounting.

Both leads are weldable.

Voltage ratings range up to 600 volts.

[eV\c..'# 2

1

2-1--1Av~y\tiGt..t, "->C~

P,<2.,r'nl)'\o.(.,ll. (;,, c,< ij

luv'\e.--Av"'pC::,\.t.,.-,«;.- f;:th"fh..1 \ ..,·te:~ (<e.e,_kJ'i'er,; J

J

NEWS RELEASENRl0l FOR RELEASEAU GUST 24, 1964

Jack Miller Extension 1206 TEXAS INSTRUMENTS INCORPORATED SEMICONDUCTOR BUILDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

PLANAR DIODES ANNOUNCED

LOS ANGELES, August 24 -Three have been announced

switching DALLAS. TEXAS BY Tl

types of diodes using planar construction

by Texas Instruments.

planar high-conductance

• DIVISION

Tl now has available

diodes, techniques planar zener diodes, and planar general-purpose diodes. Including

both established

types and new types of units, Tl's new planar lines offer uniform parameters

and the inherent

reliability

and ruggedness of this type of construction.

The planar general-purpose (including

A and B types),

types include the JAN l N645,

l N456 through l N459A,

the "Moly/G

,.®diode package,

temperatures,

and outstanding

performance,

improved voltage

characteristics

with Iife.

regulation

planar switching

and high breakdown voltage.

sales office, or directly Also packaged designer at low zener voltage and stable reverse

diodes announced

levels,

low-noise

by Tl are new devices designated

They offer extreme stabi Iity, high con

They are available

in the "Uni/G"*

on the new Tl planar diodes is available

from the Semiconductor-Componenets

diode package.

from your Tl field

division of Texas Instruments,

Dallas.

• 30 -

*

Trademark, MAILING ADDRESS: Texas Instruments Incorporated POST OFFICE BOX 501 2 • in the these diodes give the circuit

TlDl l, TID12, TIDl 3, TIDl 4, TIDl 5, and Tl Dl 6.

information

in

currents at elevated

are the l N962B through l N973B.

,.®diode package,

"Moly/G Additional Packaged stabi Iity. time-proven ductance

and the l N464 series.

these diodes offer low leakage

Planar zener types available

High-conductance

l N482 through l N486

DALLAS. TEXAS 75222 • ADAMS 5-311 1 • CABLE: TEXI NS ~ NEW PRODUCT NEWS RELEASE FOR IMMEDIATE RELEASE Jack Briner, 8/24/64. Ext. TEXAS INSTRUMENTS INCORPORATED 3609 BUFFALO SPEEDWAY • APPARATUS HOUSTON, TI INTRODUCES PRECISION TEXAS, 24, Group

wi.ll show

Show in New York, August their preci. sion transducers barometers, air speed Two models are available requiring bottle with The user recording gage Products Calibration System at the ISA sensitive

i.s calibration

device

• - a table

vacuum

a built-in

uni.t operating

on plant

• - a console

operating Both have source, vacuum source. ab solute. units In operation, the or bottle ranges system control of pressure. can measure pres sure

in any of three

modes

• - external

of pres over small manua1 nulling servo gage ranges usi.ng measurement with manual nulling measurement of pressure with servo nulling. allows setting of pressure points and returning wi.th the to a beginning The pressure servo gage pressure or two main allows

• - manual

allows

automatic control mode tracking point and from has and precise sure air on plant measurement and holding, of

• - altimeters,

precise rapid ISA Industrial application allows point AT indicators.

1 to 100 i.nche s of mercury functions

sure SYSTEM Instruments sure Prime and any pres

an external air

PRESSURE Pres 12-15. TEXAS DIVISION 1964 - Texas new Precision October HOUSTON, each to check

repeatability. -more-

MAILING ADDRESSPOST OFFICE BOX 66027 • HOUSTON, TEXAS 77006 • JACKSON 6-1411 • CABLE: TEXINS 358 Page Two Precision TI Introduces at ISA System The 50 lb. The system portable 120 lb. Products model 12 i.n. hi.gh, measures $4450. Group, P. deli.very hi.gh, 00, deli.very 120 days, O. Box 66027, Manager, Houston, Texas plant. FOB 24 i.n. deep, FOB plant. Texas weighs 18 i.n. deep, 120 days, 22 i.n. wi.de, 50 in. the Marketing wri.te 00, 18 i.n. wi.de, measures is $6500. Pri.ce i.nformati.on, sure

i.s approximately

Pri.ce console Pres Instruments, For weighs more Industrial 77006.

-30-

... NEWS RELEASE NR 116 FOR RELEASE AUGUST 24,

Don Scharringhausen Extension 593

1964 TEXAS INSTRUMENTS INCORPORATED SEMICONDUCTOR BUILDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

• DALLAS TEXAS DIVISION Tl REFRACTORY CONTACT SYSTEM ELIMINATES PURPLE PLAGUE LOS ANGELES, August 24 - interface

in semiconductors

producing

compound called

-

Laboratories, interfaces

purple plague''

division

-

failure was announced by Texas Instruments at the Western Electronics Show and Convention 11 said, director 'purple of Tl's Semiconductor plague'

and results in mechanical

degradation

Higher storage temperatures

"Although in the near future,

metal structure,

recognized

possibie are now practical

with time and temperature development, with time and it is planned with . 11 for production devices Petritz said. The new Tl refractory a layered

of the bonded contacts

than are currently

sti II a laboratory 11

Research and Development

is a compound that exists in all aluminum-to-gold

the new system since it will not deteriorate

-

of aluminum-gold

here today.

Dr. R. L. Petritz,

heat.

elimination

long known to be the source of an aluminum-gold

11 Semi conductor-Components opening A system for complete contact

system consists of a unique technique

the last of which is gold.

in the industry as the most reliable

-

This allows gold-to-gold completely

compound of aluminum and gold, "purple plague." As a result of this contact system, two major reliability devices

have been solved in addition

failures caused by corrosion to the elimination of aluminum of applying eliminating bonding the friable problems in semiconductor

of 11purple plague."

leads have been eliminated,

Early

as have thin

(more) MAILING ADDRESS: POST OFFICE BOX 5012 • DALLAS, TEXAS 75222 • ADAMS 5-3 l l 1 • CABLE: TEX INS

Page two Tl Refractory Contact System Eliminates Purple Plague

regions in leads caused by abrasion in hand Iing. that portion of the lead,

Thin regions result in overstressing

causing burnout.

The new process includes vacuum deposition

of a refractory

silicon slice,

followed by vacuum deposition

conductivity.

Thicknesses greater than 100 microinches

Several beneficial alloy after deposition,

by-products degradation

plague" was rejected

cleaning

reduction

in the lead cross section.

The chisel-bond In addition,

to overcome "purple strength of the chisel-bond

process results in a serious size

aluminum must be very soft in order to bonding.

system necessitates

of an aluminum land on the lead.

a package modification

During the glass sealing operation,

alloys form intermetallic

cobalt under this land, causing questionable

device after

which is quite reactive.

deform it the 80% that is required for metalurgical Moreover, the all-aluminum

The chemical

of the unencapsulated

by Tl because of the inferior mechanical

for bonding aluminum wire.

of the glass-sealing Because there is no post system now used by some manufacturers necessary

desired for electrical

have been achieved.

of carrier lifetime is eliminated.

this is impossible with aluminum,

The all-aluminum

metal onto the clean

of gold in any quantity

result from this system.

inertness of the system also allows chemical fabrication;

of alloying compounds of aluminum-iron consisting constituents and aluminum reliability.

Also, gold plating must be applied to the aluminum-system

package after assembly,

to allow soldering it into the circuit.

The gold plating process can degrade the metal-glass

seal, and can give rise to electrolyte

contamination

of the outside of the package.

done at this stage of the process cannot be fired at a sufficiently plating salts and give reliable To date, new refractory

to eliminate

solderabil ity.

Texas Instruments has accumulated contact system.

high temperature

Plating

300,000

hours of test information

No failures have resulted from the tests.

• 30 -

on the

NEWS RELEASE NRl 06 FOR RELEASE AUGUST 24, 1964

Jack Miller Extension 1206 TEXAS INS~fRUMENTS INCORPORATED SEMICONDUCTOR BUILDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

NEW 110-AMP, O DALLAS. TEXAS DIVISION 1200-VOLT SI LICON CONTROLLED RECTIFIERS

INTRODUCED BY TEXAS INSTRUMENTS

LOS ANGELES,

August 24 -Texas

series of high-power

Instruments today announced

si Iicon control led rectifiers

capable

a new five-device

of hand Iing 110 amps rms and

rated from 400 to 1200 volts. The new SCR's, designated

TIC0l - TIC05, will find use in such applications

large a-c and d-c variable-speed power supplies.

motor controls,

high-power

They will also serve as replacements

High di/dt and dv/dt ratings, current capability

controlled

inverters and high-current

for ignitrons and thyratrons.

avalanche

and low gate current requirements

as

characteristics,

1000-amp surge

are important operating

advantages

cited by Tl. The use of ring-gate device characteristic

firing construction

reduces, or eliminates circuitry. False firing due to line transients 200 v/µsec,

a characteristic

of the device. allowing

results in a di/dt of 50 amps/µsec. entirely,

the need for current-I imiting

is precluded

by a high minimum dv/dt of

which also makes it possible to use the ful I switching

The new SCR 1s also offer bulk controlled

them to withstand This reverse power transients avalanche speed

characteristics,

as high as 10 kw without damage.

One thousand amps may be control led with a maximum gate current of 125 milliamps. greatly

This high power gain means smaller, simpler, more reliable controls with

reduced power requirements. The new Tl devices feature a cold-weld

contacts. Both are described hermetic as important reliability seal and high-temperature advances in high-power al lay SCR

• more MAILING

ADDRESSPOST OFFICE BOX 5012 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS

Page Two New 11 0A, 1200V Si Iicon Control led Rectifier

construction.

The new contact

techniques

cycling and provide added reliability Detailed

information sales offices and authorized drastically increase resistance to thermal

at high temperatures.

on specifications,

price and delivery is available through Tl distributors. CAPTION: NEW HIGH-POWER This new high-power of handling

silicon controlled

SCR ANNOUNCED

rectifier

110 amps rms and is available

developed

high power gain are other significant

operating

hermetic seal and high-temperature

alloy contacts

TIC0l through TIC05.

by Texas Instruments is capable

in ratings from 400 to 1200 volts.

50 amps/1-1sec, minimum dv/dt of 200 v/1-1sec, controlled

designated BY Tl avalanche advantages. High di/dt of

characteristics,

and

Package features a cold-weld

for high reliabi Iity.

The new units are

~ell'\, I, [IZ..00

:2-l--\ J\\J~ lt\b1..l,"le..e. p,((, f~-t~

-\fo\\

JI •W"' Gl\hol\eJ KeL\ .L,(\ (o, J {:7,cr<_. o,, 0 -) 4P NEWS RELEASE NR 115 FOR RELEASE AUGUST 24 Jack Miller Extension 1206 INSTRUMENTS TEXAS INCORPORATED SEMICONDUCTOR • BUILDING NORTH 13500

DIFFERENTIAL AMPLIFIERS

INTEGRATED-CIRCUIT

August 24 -

purpose applications

the SN523A and SN524A,

Designated manager of the Dal las-based company's Integrated as

networks*. are built in

NPN and PNP transistors

and

vice president

Circuits department,

from the same Master SI ice wafer; only the deposited

fabricated

amplifiers

said Howard Moss, Tl assistant

The new networks,

the same structure.

Incorporated semiconductor the two new low-level with fully isolated bars of silicon,

within monolithic

entirely

pattern

at WESCON by Texas Instruments

to the firm's Series 52 line of linear SOLID CIRCUIT®

additions

general

amp Iifiers for general

differential Two high-performance were announced TEXAS DALLAS. DIVISION TWO SERIES 52 Tl ANNOUNCES LOS ANGELES, • EXPRESSWAY CENTRAL

SEMICONDUCTOR-COMPONENTS

are

interconnection

internal

is changed . The two new networks are operational

-55 to 125°C,

temperature

Also, two other Series 52 units first announced

Moss said.

S N521A and S N522A -

1962 - over the full military of in December to the ful I mi I itary

ranges extended

now have temperature

range of

requirements. The new S N523A network features fol lower outputs,

providing

design flexibility.

considerable

network in the emitters of the input stage,

a resistance

inputs and differential

both differential

emitter The amp Iifier is designed with gain to be adjusted over a allowing

wide range (40 to 70 db) simply by shorting various lead combinations. The SN524A inciudes a Darlington

high typical

input which gives an unusually

(more)

• Patented

by Tl MAILING ADDRESS POST OFFICE BOX 5012 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE· TEXINS input Page two Series 52 Integrated-circuit Differential

impedance of five megohms.

Another feature is the large dynamic output range,

15 volts peak-to-peak, Amplifiers single-ended. for both units is typically Voltage gain is a typical 60 db. typically

Frequency response

de to 150 kc; both operate from± 12-volt power supplies.

The Series 52 Master Slice bar contains two PNP and five NPN transistors,

with each

transistor usable as a diode if desired.

The circuit bars also contain six tapped resistors

with values from 400 to 50,000 ohms.

Since the diffusion techniques

simultaneously

in the single block of silicon material,

closely matched. economically

Additional semi-custom Price for small quantities and SN522A - is $37 .50. the transistor characteristics

circuit variations

just by changing the deposited

create all transistors are

can be obtained quickly and

interconnection

patterns on the bar.

(25 to 249) of the SN523A -

and also for the earlier SN521A

The SN524A is priced at $32 .50 in the same quantity

range.

• 30 -

PHOTO CAPTION

Texas Instruments new SN523A, CIRCUIT®

semiconductor one of two new low-level network line. amplifiers added to the SOLID-

[e.V\l--\,

1 J -5ec.. P,(2,PV\::rl,-..Co l. ~o, o, ,~ V·! A'-''J.\Ctt::,1.-\

[ ""::.e(,¢.'?

..

"

e...J-,;.,tviT,, j', SZ.. ---J:_..,,-1-~

J .7 NEWS RELEASE NR 105 FOR RELEASE AUGUST 24, Jack Miller Extension 1206 1964 TEXAS INs-rRUMENTS INCORPORATED SEMICONDUCTOR BUILDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

SILICON TRANSISTOR SURFACE INVERSION LOS ANGELES, August 24 - silicon was announced transistors Electrode"*, inversion A new approach the new technique

in the transistor.

did not prevent DALLAS. ELIMINATED BY Tl DEVELOPMENT to the elimination of surface inversion in Called the "Field Relief

here today by Texas Instruments. eliminates

TEXAS

the electrical

field that is one of the causes of

Earlier efforts only restricted

the growth of the inversion,

is now being used in the production

is a PNP silicon

for complementary

switch, of an inversion-free used for very-high-speed The Tl unit has low guaranteed circuitry. switching VcE(sat) 2N2894. applications

maximum at 10 ma).

Because of the Field Relief Electrode, subjecting temperature condition

in the Tl devices.

back-bias

program is now underway

leakage to incorporate inversion, currents does not produce especially the "FRE" into other silicon troublesome when the units are operated For more than three years, inversion in a back-bias condition recently several

other manufacturers

have announced sidered recision diffusion solution an ultimate

way for some time on approaches

• Patent applied

to inhibit

aimed at el iminotion

types,

in the Tl lines. causes high

at high temperatures. surface

similar approaches.

to the problem, An extensive transistors PNP transistor diffusion" time (80 nsec the units to a high in silicon

Tl has used "recision

inversion,

and programs have been under

of the phenomenon ..

for ADDRESS: POST OFFICE BOX 5012 • DALLAS. TEXAS 75222 • and Tl has never con

• more -

MAILING

and

(0.5 v maximum at

100 ma), high fr (400 Mc minimum at 10 v, 10 ma), and low total switching

Surface but it. The technique The 2N2894 • DIVISION ADAMS 5-3111 • CABLE: TEXINS

Field Relief Electrode Page 2 Recision diffusion and similar techniques

were aimed at restricting

the spread of the

inversion by means of a heavily diffused layer of the same type as the collector.

This tech limiting the size of the geometry, and hence the use of expanded nique prevented the frequency capability contacts, Tl's Field Relief Electrode

and switching speed of the units.

neutralizes

rather than restricts the inversion phenomenon,

contacts. Thus, two advantages expanded contacts result: permit smal I geometry,

higher frequency

and also al lows the use of expanded devices are possible because

and inversion is suppressed.

Though all of the causes of surface inversion are not fully understood at this time, field produces inversion.

is known that a surface electrical Electrode

with the shield grounded to the device collector. surface of the oxide wil I terminate the electrode

Any appreciable

at the electrode.

and the oxide-semiconductor interface, of the Field Relief Incorporation

into the transistor can be compared to adding an internal

"shield" to the transistor, field beginning

Little field wi 11 be evident because the electrode

at the

between

is grounded to

the collector. Additional inversion-free

information

on the 2N2894 with Field Relief Electrode,

si Iicon transistors,

the Semiconductor-Components

is avai Iable from Tl field sales offices, division of Texas Instruments,

• 30 -

it

Dal las.

and on other or directly

from CUTLINE: SILICON TRANSISTOR SURFACE INVERSION This is an artist's rendering of the cross section of a typical

with the "Field Relief Electrode"*.

The FRE, developed

shield to eliminate the surface electrical cause of inversion in silicon

*

Patent Applied For transistors. charge. ELIMINATED PNP transistor structure by Texas Instruments,

This eliminates

the electrical

protected

acts as a field,

a

Lc.V\c.J,

Z) '2-"\ Av-~, \~(;/·l, ~ (IIZ

0 ( 0 \\, "()h.,-\ C°o_' or i "}, J ~ NEWS RELEASE NR 112 FOR RELEASE AUGUST 24 Jack Miller Extension 1206 INS"fRUMENTS TEXAS INCORPORATED • BUILDING SEMICONDUCTOR switches (GCS) capable by Texas Instruments of switching

gate control led

silicon high-speed here today was unveiled

up to 750 watts in 3 microseconds

devices

specifically

are characterized

applications

for industrial

gate control led switch.

out of the same process used for Tl's TV horizontal-sweep-control

first large-screen

which recent Iy made possible the industry's

It sol id-state receiver. television The new industrial and electronic flip-flops,

GCS wil I find use in a variety

power inverters

applications, switching-mode ignition SWITCH Incorporated.

The new TIC] l-TIC15

was this development TEXAS BY TEXAS INSTRUMENTS ANNOUNCED A new series of high-power, August 24 - LOS ANGELES,

GATE CONTROLLED

HIGH-SPEED FOR INDUSTRIAL APPLICATIONS DALLAS, DIVISION

SEMICONDUCTOR-COMPONENTS

NEW HIGH-POWER, • EXPRESSWAY CENTRAL NORTH 13500 high-speed

and converters,

power supplies and regulators,

d-c switching

relay and hammer drivers,

Other uses are in high-power

breakers. circuit of high-frequency ballast flourescent power pulse modulators, and auto replacement systems. Characteristics is required important

to such applications

to turn off 5 amps at 100 volts),

power switching

are high current turn-off

high voltage

capability

(750 watts up to 7 .5 amps), and fast switching

The use of these units in place of conventional with corresponding

improvement,

cost and reliability

gain (only 200 ma

(100 to 500 volts),

speed (typically

61-1sec). SCR's can result in simplified reduced (more) ADDRESS: POST OFFICE BOX 5012 • DALLAS, TEXAS 75222 • AD~Ms 5-3111 circuitry

size and lower drive

capacitor

power requirements.

MAILING high • CABLE: TEX INS Page two New High-power, High-speed

Also contributing industry first. dissipation

Gate Control led Switch

to reliable

performance

The new design features an all-copper

for cooler operation

in circuit-board

The new Tl Cl l-TIC15 gate controlled and authorized

is Tl's new TO-3 cold-weld

distributors

package

-

an

header and can which improve free-air

applications.

switches are available

at prices ranging from $5.40 to $13.35

through Tl sales offices in quantities

of 100 to 999.

• 30 -

PHOTO CAPTION

NEW INDUSTRIAL GATE CONTROLLED SWITCH ANNOUNCED

BY TEXAS INSTRUMENTS

Capable of switching up to 750 watts in 3 microseconds,

Texas Instruments new silicon gate

control led switch is designed for a wide range of high-frequency, applications.

d-c switching

The new Tl Cl l-TIC15 devices are similar to Tl's GCS for horizontal

control in industry's first large-screen TO-3. high-power solid-state TV receiver. sweep

Package is Tl's new cold-weld

[e.1 \ 1!l f.\\J:l,\ti.£.:,L--1} 'Jee_ e1i,ehdo,lcll LGi:---\e.Cov\--\1 o\\a~ ~wi\c.

0 .~-,

L--,..L--,..L--

..

...L.__J ...L.__j

llu -ANOOf SUPPLYY0t.T"(".(-Vol!J

~J fo( 0C1J 4P

NEWS RELEASENR107 FOR RELEASEAUGUST 24, 1964

TEXAS Jack Miller Extension 1206 INSTRUMENTS INCORPORATED SEMICONDUCTOR BUILDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

TEXAS INSTRUMENTS ANNOUNCES capability TEXAS TYPICAL RECOVERY TIME A new series of ultra-fast with more than ten times the frequency DALLAS. ULTRA-FAST SILICON RECTIFIERS WITH 70-NANOSECOND LOS ANGELES, Aug. 24 - • DIVISION

diffused-junction

of conventional

silicon rectifiers

rectifiers

was unveiled

by Texas Instruments with the opening of the 1964 WESCON Show. Described as ideal for such uses as high-frequency switching,

and multi-phase

registered

as 1N3884-3893.

rectifier

applications,

power supplies,

the new diffused-junction

They are rated from 50 to 400 volts,

represent an extension of Tl 1s high-speed

high-speed

6-amp l N3874-3883

12 amps.

devices are The new units

series {originally

introduced

as TIX440-442). Both the 6- and 12-amp high-speed isolated top-hat are available

rectifiers

stud package as well as the DO-4 standard top-hat

in the JEDEC DO-10 stud.

The DO-4 devices

in both standard and reverse polarity.

Electrical

characteristics

include very low recovery time (70 nsec typical,

maximum), high current capability

(15 amps d-c,

to zero at 150°C) and extremely

high rectification

The advantages typical de-to-de

of such high frequency

converters.

measure approximately efficiency.

are now available

400 cubic inches,

A 25-kc converter

only about 160 cubic inches,

12 amps average to 100°C, derated efficiency

capability

A 1-kc converter

200 nsec

to 150 kc.

can be seen in a comparison of two

using conventional

500-watt rectifiers ADDRESS, POST OFFICE would

weigh about 50 pounds and offer less than 70%

using the new high--frequency

500-watt

units would measure

weigh only 20 pounds and offer better than 90% efficiency.

(more) MAILING linearly BOX 5012 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE, TEXIN5 Page two Ultra-fast silicon rectifiers

Prices for the 6-amp 1N3874-3883 quantity;

the 12-amp l N3884-3893

series range from $10.70

to $17.00 in the 100-999

series from $11.25 to $18.00.

-30-

CAPTION

NEW ULTRA-FAST SILICON RECTIFIERSAVAILABLE IN BOTH STANDARD AND ISOLATED TOP-HAT STUD PACKAGES Texas Instruments new l N3874-98 JEDEC DO-4 top-hat

high-speed

silicon rectifiers

stud and DO-10 isolated top-hat

6- and 12-amp devices ranging from 50 to 400 volts. nanoseconds, high-speed

are available

stud packages. With typical

Ratings include

recovery time of 70

the new units are wel I suited for such uses as high-frequency switching and multi-phase

rectifier

applications.

in both the

power supplies,

[e,,,cl

2~1 A~'.). l'\b"I , •,.oc

lcJ, \ '--o•"'I ~c..-4;

~' e.., ',

r.I<'·pt,,.,lo . Lo\\, f'or o ('} 1

1 I I o' I Jack Miller Extension 1206

NEWS RELEASENR102 "=ORRELEASEAUGUST 24, 1964

TEXAS INSTRUMENTS INCORPORATED SEMICONDUCTOR BUILDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

VARACTOR SERIES WITH 300-Gc ANNOUNCED

LOS ANGELES, August 24 -The diffused gal Iium-arsenide They are specifically varactors DALLAS. TEXAS CUTOFF FREQUENCY BY Tl

TIXV0l varactor

frequency at -2 volts, was announced

• DIVISION

diode series,

featuring

here today by Texas Instruments.

have a normal operating

designed for use in parametric frequency amplifiers, 300-Gc cut-off

The new epitaxial range of 1 to 20 Ge.

with a capacitance

range

from 0 . 35 to 1 . 0 pf. With the addition of the new TIXV0l series, frequency

spectrum from DC to 300 Ge.

the A580-589, 500 Mc. ating frequencies operate At the low end of the frequency and A660 voltage-variable Next,

the complete Tl varactor

capacitance

diodes,

features normal oper

The A600, A6 l 0, and D500 microwave varactors

from 1 Ge to 10 Ge, and the A900-903 and A905-908

from 1 Ge to 20 Ge.

band, Tl offers

which operate from DC to

the A706-713 series of silicon harmonic generators from 100 Mc to 5 Ge.

harmonic generators

With the TIXV0l series rounding out the selection,

industry's most complete selection

of varactor

Al I Tl varactors offer extremely in a variety of packages,

including

line spans the

Tl offers the

units.

high "Q" values and low inductance.

industry-standard

configurations

The units come

and special designs.

One special benefit designers achieve

from use of these units is device un)formity,

electrical

and guaranteed.

parameters tightly controlled

signer more freedom from the necessity of individually istics of the varactors

operate

with

This uniformity allows the de tuning each circuit to the character

used.

• more -

MAILING ADDRESSPOST OFFICE BOX 5012 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS

Varactor Series With 300 Ge Cutoff Frequency Announced by Tl Page 2 Samples of the TIXV0l series are immediately $200 to $600 each.

Additional information from the Semiconductor-Components division, available from stock. Prices range from

is avai Iable from Tl field sales offices or directly Dal las.

• 30 -

CUTLI NE300 Ge VARACTOR DIODES The tiny varactor shown on the flange of microwave

Texas Instruments. operating amp Iifiers.

frequency

The cutoff frequency

of this new diode is 300 Ge,

range is from l Ge to 20 Ge,

is a TIXV0l, from at -2 volts. Normal wave guide fitting

and they are designed

for use in parametric

[eV\L\,#Z..,1--L-I A.v~r l'1.C.."l)5e-e_p.R. Ph<rtu Coll- ~o<

[_\Jt..,~' lo, D,ode 1

!)114

,7

Ext.

Clark W. Fishel, 8/24/64

C43 0 RELEASE NEWS RELEASE FOR IMMEDIATE INSTRUMENTS TEXAS INCORPORATED Aug.

25- -(Special)-

WESCON the delivery

of experimental

The in the the U.S. with 1n conjunction transistor, region, supplement it in some and may conditions input has

as 400° C, while

The new optoelectronic pulse of gallium arsenide to provide and output. In March for TI and for by Texas Instruments advances produces of this year output silicon transistor the satisfactorily operate transistors observed under laboratory are limited to 125°C. devices exploits amplifier complete the light-emitting isolation electrical

an optoelectronic

TI announced in a higher to operate between multiplex/ (more) MAILING ADDRESS· POST OFFICE BOX the 100 milliwatts over advantage been silicon as high properties Air which arsenide action

C, and transistor

200 Patterson pursued 0 at over opto- due to its ability applications TI gallium environment. temperature and being a distinct offers 500 megacycle transistors Force. Air arsenide gallium program research applied arsenide gallium at Wright significant two more marks This Ohio. Base, Force today Laboratory, to the Avionics amplifiers pulse electronic arsenide gallium FORCE announced Instruments

-Texas

TEXAS DELIVERY TO AIR DEVICES ARSENIDE OF GALLIUM DALLAS, • EXPRESSWAY CENTRAL NORTH ANNOUNCES INSTRUMENTS TEXAS LOS ANGELES, 13500 • BUILDING RESEARCH OFFICES: CORPORATE 5474 • DALLAS. TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS 15 55 page two arsenide gallium chopper which emitting diode. as an essential incorporates for semiconductors its research and more than five years. In 1959, The first arsenide regulator diode, arsenide varactor diodes was diodes, In 1962 the was introduced

to the market.

effort in many special devices along with gallium arsenide infrared light gallium The arsenide. semiconductor in 1960,

semiconductors.

is gallium In addition of gallium illustrative of all to the various effort at Texas with active and discrete objective passive devices, involves Instruments components

-30-

arsenide of Tl's semiconductor compound a gallium TI announced to be a line are properties the unique of which compound in compound grown of several developments work has of what announced first tunnel The latest development pursuing been TI has the light- arsenide gallium element active total technical of this effort is to exploit materials, part the emitters of the total incorporation in functional type one leading compound of these electronic blocks. 358 Ext. Jack Briner, 8/ 24/ 64 C428 RELEASE NEWS RELEASE FOR IMMEDIATE INSTRUMENTS TEXAS INCORPORATED • SPEEDWAY BUFFALO 3609 complete will be shown for Electronic Show and Convention (WESCON). 658, is produced by Tl's Houston-based 1964 Western of the Model The new tester, suitable particularly Basic program of other packages available in a variety Other the excess voltage duration of each test which

or oscillation,

rack, bench would include damage devices are

installations. provisions protection

programmable and built-in also units or modular system of the 658 test features outstanding for same The enclosure. a table-top including $8800, 658 is under and a drawer-type unit changing in either changes frequent involving programs of the Model price process for test system low-cost flexible, as a highly at the today here time first quantitie,s. or large small for the

It is designed

Group. Products Industrial conditions of test programming digital and transistor Instruments Texas features logic state

and all- solidopening

that system test diode

-A new

25- -(Special)-

August LOS ANGELES, CONVERSION SIGNAL MEASURING, WELDING, TESTING, FOR AT WESCON NEW EQUIPMENT DISPLAYS GROUP PRODUCTS INDUSTRIAL TI'S TEXAS HOUSTON. DIVISION APPARATUS test. under (more) MAILING ADDRESS: POST OFFICE BOX 66027 • HOUSTON, TEXAS 77006 • JACKSON 6-1411 • CABLE: TEX/NS from page two Tl's industrial products model A new unit TI introduced flat mounting controlled integrated circuits greater New Transistor drift problems able with over seconds (millionths computer interface Analog-to-Digital, throat four at least measurement time

9. 99 nanoseconds

made instrument, eliminates design state solid A new instruments. generally

the presentation

times are Introduced Instrument conventional with encountered from using techniques sampling of seconds) (billionths avail- make Converters

and Digital-to-Analog important

additions to its with equipment at WESCON and Model 854 Digital-to-Analog (more) the line of data introduction converters. Expand and to 9. 99 micro of seconds). Analog-to-Digital TI will Its

by TI today.

Measurements ranges counting for and new five-inch microscope switching transistor oscilloscopes. control width pulse Measurement Time Switching provides automatically boards, selectable for designed freedom, working normally window" "readout weld. A "swing-out" be introduced will 641, each a new has also 705B An all-solid-state Model circuit to complete sensitivity. provide to printed original the welder, The parallel-gap ago. welder circuit than powerful more times

is seven a year

show required Model welding depth of TI I s dynamically of integrated The greater Welder at the the voltage adjusts Controlled at WESCON to be demonstrated Shown Dynamically Powerful More Line acquisition of Model and 846D page three TI' s industrial

The systems, signals

products typically from which converters, missiles Both new are vital space instruments functions electronic equipment in ground-based used and perform that handles within larger telemetry vehicles. combine high operational reverse side speed with high accuracy.

-30-

Copies of photographs reproduced on the are available upon request.

INCORPORATED TEXAS INSTRUMENTS DIVISION APPARATUS SPEEDWAY 3609 BUFFALO 77 006 TEXAS HOUSTON,

658 TRANSISTOR MODEL AND DIODE TESTER MODEL 705B INTEGRATED CONTROLLED DYNAMICALLY CIRCUIT WELDER f/1 ............ .. ... ,. .. • ••• ••• • • • •' .., . • .....

--• :,,).• • • •

I 1 MODEL 846D ANALOG-TO-DIGITAL CONVERTER ~ r

SWITCHING MODEL 641 TRANSISTOR INSTRUMENT TIME MEASUREMENT

MODEL D-l .... CONYUTER 854 DIGITAL-TO-ANALOG CONVERTER NEWS RELEASE NR117 FOR RELEASEAUGUST 25 Don Scharringhausen Extension 593 TEXAS INSTRUMENTS INCORPORATED SEMICONDUCTOR BUILDING • 13500 NORTH CENTRAL EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

• DALLAS,

TEXAS

DIVISION

1 .5 Ge, 1/4-WATT TRANSISTOR ANNOUNCED

LOS ANGELES, August 25 - BY TEXAS INSTRUMENTS (Special) -A high-frequency developmental

designed for use as a primary signal source or driver for varactor to C, X or higher frequency

bands was announced

multiplier transistor, chains to go

at WESCON today by Texas Instruments

Incorporated. Designated the MD-49-4, single chip connected

the device is made up of four individual

by an evaporated

lead pattern to form two pairs.

devices on a Characteristics

of the final device offer 1.5 Ge output; 0.25 watts (min) at VcB = 15 volts, Other significant

characteristics

le=

100 ma.

include:

BVCBO = 30 volts (min) BVCEO=

15 volts (min)

BVEBO = 4 volts (min) ft

Development

of the MD-49-4

for two general applications, multipliers

= 1.2 to 1.8 Ge (typ)

(under Bureau of Ships contract

#NObrs-89423)

was

one as a driver for higher frequency sources using varactor

and a second as a fundamental

Although varactor multipliers source for low-power portable radars.

can now be designed to operate very efficiently,

is in the interest of circuit simplicity

to start at the highest possible frequency

reasonable

With the 1 .5 Ge fundamental

power can be obtained.

where source of the MD-49-4, (more) MAILING ADDRESS: POST OFFICE BOX 5012 • DALLAS, TEXAS 75222 • it ADAMS 5-3111 • CABLE: TEXINS Page two 1 .5 Ge, 1/4 Watt Transistor

it is possible to multiply up to C, X and even KU bands with relatively

simple circuitry.

Varactors multipliers are now being designed and built that have an efficiency 50% when multiplying by four, e.g.,

1 .5 Ge to 6 Ge.

of

A single element of the MD-49-4

with an output power of 100 mw at 2.25 Ge has been used to drive a varactor multiplier to give 25 mw at 9 Ge, Texes Instruments report~d.

• 30 -

1559 Ext. Dick Perdue, 8/25/64 C42 9 RELEASE NEWS RELEASE FOR IMMEDIATE INSTRUMENTS TEXAS INCORPORATED opening of the announced two new advances

in semiconductor

target of research semiconductor products here Show and Convention. TI also 11 to systems. materials highlights exhibit It includes eight using by the Apparatus division in Dallas,

new instruments

produced by the Industrial rnaterials, thermostats clad Eleven demonstrate a in the gallium arsenide transistors the company new types 1 11 total produced equipment Group MAILING new in Houston; five and new by the Materials & Controls integrated circuits':' 1

multi-function'

semiconductor CIRCUIT® SOLID 11 concept that, to TI Vice according President by TI ADDRESS: built circuits; integrated semiconductor from capability of aerospace Products switches s (more) ,:,Patented and industry, Mass. in Attleboro, division and efforts environments. Centigrade 60-ft Tl's today

of experimental

Force S. Air in 200° can operate the been have U. to the the delivery that long that Electronic Western at the 125 new technology introduced Incorporated Instruments

25--(Special)--Texas

August LOS ANGELES, TRANSISTOR 200-DEGREE AND NEW ADVANCES TECHNOLOGICAL REVEALS AT WESCON; PRODUCTS SEMICONDUCTOR 125 NEW TI INTRODUCES TEXAS DALLAS, • EXPRESSWAY CENTRAL NORTH 13500 • BUILDING RESEARCH OFFICES: CORPORATE POST OFFICE BOX 5474 • DALLAS, TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS Cecil page two TI record number Dotson, makes P. contains up to four or more functions in a single package effective cost and fewer

interconnections can

the assembly TI also announced in one 20, 000 11 minute. for than molecular electronic cigarettes and and is 100 times transistorized subjected Use Demonstrates eight

TI is displaying two dozen

such PCM telemetry only 15 ounces. weighs smaller system integrated circuits, extending and 50 times space acceleration of Integrated Circuits most recent It is the

It contains lighter

(more) is a U. than of integrated S. Air size built Force of two packs

28 5 TI semiconductor a functionally

circuits, or being delivered already encoder. version. using equipments a family example, For applications. to a constant broadly and tested but processed line, reliability. include They applications. equipments One of the applications. aerospace improving and are manu- while military a full more new 33 other packages equipment further the inch, the standard G I s 11 for typifying system, such several fewer because in a total of silicon of a cubic a thousandth And the networks Today, with paralleling the Equipment Thus, and industrial tests of the functions. reduced. still

severe-environment

for especially bar space military, networks of 15 low-power required costs reduce of their range are monolithic than less measuring

is significantly

circuit per circuit complete tiny each approach multi-function In the facturer com- conventional applications. most for ponents with competitive fully circuits TI integrated identical of networks page three TI record number device designed to simplify a Navy Bureau of Ships per 1/4 with second) silicon PNP base TI transistors choppers that cost-critical for A new an extremely features today gallium devices of this control fields. type Other now are new power supplieso arsenide varactor high cut-off being applied TI diodes and reliability and

general-purpose

for high current Cl capable use of switching in auto ( 50 amp) at WESCON TI introduced series diode power germanium frequency (300 gigacycles at -2 volts). broadly in the microwave and rectifiers new diodes ignition one-amp capability industrial consumer, rent and semiconductor are TI industrial include: planar using of the zene r, construction techniques switching, conductance high- types. Three provide conventional and They ruggedness. many high-cur six Twenty-eight for replace

planar-epitaxial

first industry's the include can and choppers;

electromechanical transistors

outputo watt new Other of times (billions

at l. 5 gigacycles

It operates contract. under developed It was radars. in portable circuitry the frequency a high was today TI announced is tors trans 12 new the Among Devices Semiconductor New Five

in a hermetically

package glass military applications where space high-power, high-speed silicon gate and up to 750 watts systems, sealed

in 3 microseconds

flourescent (more) light ballasts, well- suited

is critical. controlled

(millionths and that rectifiers silicon

glass-encapsulated

other switches of seconds) industrial for

page four TI record

number

app]icc1tions. made

possible new the industry's refractory metal, ing wires can arise " at high contact surfaces. Tl's It involves a unique method of a high-speed 11 avoiding metals. TI already achievement FRE silicon switch. into other silicon TI Announces Delivery

<lrsenide

transistors Avionics Laboratory. and marks known leakage current technique now

at WES CON the pulse

two more (more) first a Thus, gold connect- in "surface as operated are devices used method Relief "Field industry when can that new the the in the in the production to is underway TI lines. delivery amplifiers significant a of depositing complications Devices Arsenide are is called solution is being in the transistors as known connections when program An extensive

opto-electronic

This is termed of Gallium today TI announced TI revealed high causes PNP FRE circuits. generally a condition to eliminate is using integrated and TI 1 s new the surface, components is a method material. semiconductor the onto to a gold condition temperatures. incorporate caused It prevents The inversiono" spot of dissimilar A second Electrode. trouble be bonded discrete both making is a potential gold, then the use from semiconductor system, contact "refractory affects to aluminum wire gold with made This " plague. "purple receiver. devices, commonly that a condition completely today TI disclosed advance

One technological

television

Technology

in Semiconductor

Advances New switch solid-state large-screen first that controlled gate of Tl's

1s an outgrowth

series This to Air Force gallium

of experimental to the advances

Uo S. Air for Force's TI and for page five TI record number the gallium Air Force. The the silicon to operate ability may supplement

at temperatures

above and transistor of 125°c for emitting properties it in some advantages aver applications because of its to a maximun, compared complete light- the exploits amplifier pulse to provide arsenide of gallium distinct

200° Centigrade,

opto-electronic

new The silicon. with some has transistor arsenide gallium the by TI 1n conjunction pursued being program research arsenide electrical isolation technical effort in a circuit. These developments unique properties exploiting the gallium

arsenide. New Tl's

equipments today complete model powerful of test digi t2l programming of TI's than dynamically the original controlled unit Group and conditions and integrated circuit TI introduced

-30-

five unveiled circuit integrated transistor low-cost

A highly-flexib]e,

conversion. testing; semiconductor Show~_ Products Industrial in including

semiconductors,

Equipment Industrial total active compound of many Houston-based for Tl's illustrate diode welding; test at WESCON a year signal and system features logic. A new

all - so lid- strtte welder

new

is seven ago.

times more NEWS RELEASE FOR IMMEDIATE 4P RELEASE INSTRUMENTS TEXAS INCORPORATED CORPORATE word that the ruling SUIT BROUGHT in a patent Instruments BY SPERRY RAND has received has upheld Circuit Fifth suit infringement of Texas District the Northern for Court District States TEXAS DALLAS, Incorporated for the of Appeals Court States of the United of Texas

in favor Rand

the United • EXPRESSWAY CENTRAL Instruments

-Texas

28--(Special)- August DALLAS, NORTH 13500 TI IN PATENT UPHOLDS COURT APPEALS • BUILDING RESEARCH OFFICES: by Sperry brought Corporation. Sperry germanium Rand semiconductor 2,530,110 Patent Woodyard germanium suit filed 1959 alleging TI in September against manufactured granted to Sperry Rand in Federal Court at Dallas In his ruling, which

in 1950 relating

to

rectifiers. was tried

The case Whitfield Judge T. Court of Appeals, in is sue invalid Davidson. Judge Davidson dismissed in May was upheld the action,

1962 before by the Circuit

adjudging

the claim

and not infringed.

-30-

MAILING

all

upon

by TI infringed

devices that ADDRESS: POST OFFICE BOX 5474 • DALLAS, TEXAS 75222 • ADAMS 5-3111 • CABLE: TEXINS .• ,... /,' United States Courtof Appeals • FOR THE FIFTH CIRCUIT No. SPERRY ' ' IN THE ; . 19866

RAND CORPORATION, Appellant, versus

TEXAS INSTRUMENTS

INCORPORATED, Appellee. I • f

Appeal from the United Statea District Court for f'Jae Northern District of Texas.

(August 25, 1964.) j

Before HUTCHESON and BROWN, Circuit Judges, CHRISTENBERRY, District Judge.

'

and

Plaintiff-appellant Judge: Circuit HUTCHESON, 1 brought this action for Sperry Rand Corporation Inc. against Texas Instruments patent infringement The district court filed an able opinion and extensive 1

t Sperry Rand Corporation is the successor in interes to the Sperry Corporation assignee of the patent alleged infringed, Woodyard No. 2,530,110. I

'1·

,/

Inc.

Sperry Rand Corp. v. Texas Instruments

2

findings of fact and law. 2 He dismissed the action, adjudging the claim in issue invalid , td not infringed. The claim alleged infringed is for a germanium rectifier and reads as follows:

alloy

conducting apparatus "10. Unidirectionally comprising a member, a first conductor in contact with a part of said member, and a second conductor in contact with a different" part of said member, said member being constituted of a germanium base alloy, said alloy having a minor constituent constituted of one or more elements of the nitrogen group, said alloy further containing 1% or less of said minor constituent."

• .• :1, •.. .,I ,. •'• l 1 ' I f

The accused device is the grown junction transistor, that is a transistor composed of a single crystal of germanium, portions of which are alloyed with ele ments of the nitrogen group and portions of which are alloyed with other elements. I

The trial judge found that the Woodyard patent claim was not the product of his invention but was the product of the invention of a group of scientists assembled by the government after Pearl Harbor as part of the National Defense Research Committee. He further found that if the patent was valid it was not infringed since the plaintiff had not proven that the patent embraced the elements of the transistor. The appellant attacks both of these findings, the first 2

206 F.Supp. 676 & ....

• F.Supp. . . . . ( ) I . ,,,

Sperry Rand Corp. v. Texas Instruments

Inc. : ... 3 . .. ' ,.. ·'.. .,.

on five grounds, the last on three. The substance of the attacks is that both findings are clearly erroneous. We affirm the judgment and approve We disagree. the findings made below. and un The evidence is extensive, contradictory Appellant relies on this appeal primarily on clear. the direct testimony of the inventor to establish the crucial fact of invention which all concede to be the addition of bismuth to purified germanium to achieve an improved rectifier in late April, 1942. This testi by the deposition of a mony, though corroborated mechanic who worked with the inventor, was made by the fact, that the inventor less than persuasive deposed that he could not say whether he had made the invention or had merely verified the works of others, and by the fact that most of his testimony was in 'the form of conclusions of invention drawn from evidence and documentary depositions, testimony, which might be as readily interpreted to disprove his invention as to prove it. Neither the note book of the alleged· inventor nor that of his company shows the addition of a nitrogen group element to germanium ·until December, 1942, long after other members of These books are the· group had made such addition. They· indi not silent concerning germanium, however. purification the with cate that Woodyard experimented of germanium during the period from April until -De cember; 1942.

..' ,. ,. ',• ' . /' ~ I I ..., I , ,. ,' f )

Appellant relied here heavily on the evidence which indicates that Woodyard gave Dr. Angello of Westing-

J I ., .... • ,I :. • I 4

Sperry-Rand Corp .. v. Texas Instruments.Inc.

house a sample of germanium on April 21, 1942, which Westinghouse analysts subsequently found contained about one percent bismuth. They deduced from this that Woodyard had added bismuth to the germanium he gave Angello. Angello testified that Woodyard did not inform him of the contents of the sample. A Westinghouse Woodyard testified to the contrary. sample of germanium to which no impurities had been added analyzed at the same time was also found to The evidence indicates that what contain bismuth. Westinghouse thought was bismuth in both samples was arsenic, an element naturally appearing in ger manium and one which is easily confused with bismuth under certain analytical procedures. On May 11, 1942, Dr. Lark-Horowitz of Purdue Uni versity, who had visited with Woodyard at Sperry that same day, telegraphed his laboratory to add bis muth to pure germanium. Appellant assumes this idea came from Woodyard who so testified, though he admitted the possibility that Lark-Horowitz could have gotten the idea from the Westinghouse analysis. The telegram itself does not disclose the source of the idea. We are not firmly convinced that the trial judge erred in finding no invention. Industrial Instru ment Corporation v: Foxboro Co., 307 F(2) 783 (1962) . .As to the infringement, the evidence is equally as There is persuasive evidence, however, contradictory. supporting the trial judge's conclusion that Claim 10 conductive apparatus is limited to a unidirectional while the transistor is a bidirectional conductive ap-

,' , . ',. I I ) t I ' '

.. Sperry Rand Corp. v. Texas Instruments

Inc.

5

And there is convincing evidence that while paratus. Claim 10 describes metallic conductors in contact with a semi-conductor of germanium alloy, the transistor is crystal a device composed of a single germanium having various areas of alloy in contact one with identical. The devices are not substantially another. The results they accomplish, rectification for the Wood are yard device and amplification for the transistor not similar. Marconi v. DeForest, 243 F. 560 (2nd Cir. 1917) relied on by appellant is of no aid to him. The trial judge here has found distinctive devices, and there is no error in his findings, that is the end of it. Scherbatskay v. United States Steel Corporation, 287 F(2) 552 (7th Cir. 1961). AFFIRMED.

. ' ' '"'' 1 •' ' ., ; Adm. Office, U. S. Courts-E.

S. Upton Printing Co., N. 0., Le.

V .' / • I Bob Roth, News Release For Immediate Ext. 7 204 / Release METALS A & CONTROLS C O R P O R A T E O INC. I V I S I O N OF

TEXAS INSTRUMENTS INCORPORATED

NEWHIGH STRENGTHCUPRONICKEL-CLAD STAINLESS STEEL UNDERSEACABLE RESISTS CORROSION, EXTENDSSERVICE LIFE, REDUCESMAINTENANCE ATTLEBORO,MASS., (U,S,A.), marine

cable, comprising nounced by Metals August Inc., Incorporated. Marketed under for undersea applications and armoring for corrosive buoy cable,

By metallurgically

not available marine cable effectively water. These include growth can be designed electrical dissimilar resists bite. Service of cable and resultant If a break the "fish stainless steel hooking," core that life a life flowing loss the C-CLAD in sea fouling or more years ratios in the of from 2 to 6 months is the primary of valuable having at 2 fps, in the impedes the material corrosion, cause greatly reduces per year the corrosion galvanic action and eliminates broken passage collection of data of instruments. only a 0.0003" cupronickel, from corrosion often material, of from 2 to 5 expectancy of the new cable, does occur wear, by changing crevice problem.

of any single

kinking, particularly in sea water a combination to obtain fatigue, Corrosion, rate tow line, excessive cables. corrosion is designed cable, found most other cladding cable factors for

The cupronickel

is an- of Texas Instruments C-CLAD, the materials strands wire. failure with division wire,

the detrimental

C-CLAD cable compares steel of cable. basic premature This

-- A new type

such as oceanographic corrosion, into a corporate in wire and fish stainless the TI trademark, bonding of properties by marine

1964 - (Special)

cupronickel-clad

Controls & 28, protects strands or rings.

• more MAILING

ADDRESS34 FOREST ST. • ATTLEBORO, MASSACHUSETTS • TELEPHONE: AREA CODE 617 • 222-2800 • CABLE: TEXINS 1 .J. ~-A.__ ratio wire diameter at 335,000 lb. psi, strength in marine tensile strength of C-CLAD was tested

than galvanized

improved plow steel. higher the It organisms. marine deters inhibits reeling in and paying organisms because the copper ions which sufficient to produce cupric metallic, C-CLAD cable is also weakens The new clad metal longer, to stay on-station cruises now required possible and instrument significantly reduced. Cable is supplied standard

configurations.

Standard cupronickel are per operating deli very cable is 8 weeks. Being resistant, an undersea problem oceanographic vessels payloads will of SC%, will be up to 30,000 range stranding

• 30 -

to 0.094". thickness. ratios, alternate materials.

da.ta is available

be in all and material le:ss than tec~1.nieal fi:. from 0.005" 13% by cross-sectional is is considerably Complete in excess lengths Wire diameters cladding is

inspection-maintenance

Heavier cable. reportedly in continuous to permit the frequent to check mooring depe~1.dent on quantity, house to them. is expected and reduce loss, cladding in the cupronickel cables. many plastic or breaks C-CLAD cable

out operations.

are poisonous bite fish 2C% of marine by growth is fouling cable common to undersea problem Another prices At a finished and good fatigue of 0.014", that cable. strength-to-weight a high

is the need for

resistance to corrosion Second 2 Cable Marine Steel Stainless New Cupronickel-Clacl Although cable cost Normal

from the manufacturer.