德州仪器新闻稿，1964年8月

1964 · company-archive · 原文约 14245 词

译文与英文原文逐段对齐可在本页展开英文，也可打开发布者原址核对上下文。

打开来源正文

FOR IMMEDIATE

NEWS RELEASE

TEXAS

RELEASE

INSTRUMENTS

INCORPORATED

INSTRUMENTS INCORPORATED

SEMICONDUCTOR

BUILDING

13500

•

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

DEMAMBRO

ELECTRONICS

达拉斯>

已任命

它是。

DALLAS> appointed it was

August

today

Semiconductor-

塞西尔

经销商

distributor by Cecil

Components

Located

现在正在进货

is now stocking

DeMambro

facility

Mass.,

distributor

in Natick,

包含电子整流灯

Included electronic rectifier light

*Patented

是一项补充。

is an addition

by Texas

Instruments

Incorporated,

Dotson,

vice

of TI1s

Avenue,

致各位优秀的人

to the fine

Supply

and Lafayette

president

Boston,

DeMambro

service

Company,

Industrial

The

now provided

authorized

TI distributor

Electronics,

authorized

Mass.

components

sensors,

has been

德州仪器（TI）的全系列半导体。

the full line of TI semiconductors.

在 TI 线上——他说……

in the TI line--said

types,

in Boston

IN BOSTON

division.

by Engineering

in Canton,

TEXAS

DIVISION

Electronics

at 1095 Commonwealth

Electronics

New England

DALLAS,

新的 TI 经销商

NEW TI DISTRIBUTOR

1--DeMambro

an authorized

announced

APPOINTED

•

最广泛的

to be the broadest

在该行业中，

in the industry-

和 200 个二极管，

and 200 diodes, and SOLID

plus

CIRCUIT@

固态技术领域

line of solid-state

550 types

a similarly

of transistors, range →

晶体管、范围

of transistors, range

of SCR 1 s,

integrated

circuits*.

wide

semiconductor

2 30

by TI

-30-

by TI -30-

MAILING

ADDRESS,

POST

OFFICE

BOX

5012,

DALLAS

TEXAS

75222

ADAMS

5-3111

CABLE

TEXINS

ihdl/)1

~11Mef)£ tll8

/#C:.J>E

~11Mef)£ tll8 /#C:.J>E

r Z-Mcoel' CilDL-t1

迪克·戴维斯

AD 5-3111 转 4225

Dick Davies AD 5-3111 Ext 4225

INSTRUMENTS

TEXAS

INCORPORATED

DIVISION

INCORPORATED DIVISION

APPARATUS

TEXAS

award

道格拉斯飞机公司因 LTV 飞机雷达合同获得数百万美元奖励。

DOLLAR AWARDED MILLION INSTRUMENTS FOR LTV AIRCRAFT RADAR CONTRACT

August.

5 -(Special)=

of a contract

for over

在 10 月前完成飞行。

to fly by October

1965.

will

supply

Instruments

Texas

which

Texas which

will provide

display

在相关方面，沃特公司。

of pertinent Vought

ground

conceived

forward-looking

radars

the military

and aerospace

signal

radar

Bucy,

by Texas

Texas

IIo 和 Mohawk。

IIo and Mohawk. with full

for

Instruments

Additionally

radar

design

新天线

在 A-7A 上

New antenna in the A-7A

this

我们再看电视显示。

and TV display

reliability

and advanced

子系统与能力

subsystem. and capabilities

techniques

on similar

work

to increase

approaches

the latest

incorporate

Instruments

Phantom

of unique

primes.

将会介绍

will be introduced

from

the contract,

who signed

and manufactured

design.

set will

and

高峰时可达到 1000 架次飞机。

run as high as 1000 aircraft.

in a family

in electronic

resulting

configuration

J. F.

the newest

processing

The radar

may

will include

新的雷达和微型化技术

The new radar and miniaturization

Production

television

assault

the A-7A

作为最新

as the latest

subsystem

the A-7 A radar

described

for the A- 7A

and also

ranging

在 LTV 公司进行建设

of LTV is building

president.

vice

The A-7 A

subsystem

information.

为海军服役。

for the Navy.

aircraft.

radar

system

aircraft

Incorporated

Attack

空对地

air-to-ground

Division

Instruments

Light

mapping,

weapon

Instruments

Texas

a unique

Aeronautics

close-support

to Texas

dollars

a million

announced

在凌·坦姆科·沃特公司（Ling-Temco-Vought）的案例中

of Ling-Temco-Vought

Officials

对于海军 A-7 型飞机

for the A- 7 A Navy

of radars

用于开发的计划

for development is scheduled

RELEASE

FOR IMMEDIATE

NEWS RELEASE

DALLAS

TEXAS

DALLAS,

•

EXPRESSWAY

CENTRAL

NORTH

13500

subsystems

请问您提供的“for the F-11 lD production”是巴菲特原文中的一部分吗？它看起来像是技术或生产相关的短语，可能并非出自巴菲特致股东信、演讲或文章的典型内容。请您确认原文段落是否完整或提供更多上下文，以便我准确翻译。

for the F-11 lD production

这将是第一次兼容。

will be the first compatibility.

-30MAILING

ADDRESS

POST

OFFICE

BOX

6015

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

TWX

214-231-1492

•

TELEX

073-324

Jack Briner,

8/7/64.

Jack Briner, 8/7/64.

新闻稿

新产品发布

即时发布

NEWS RELEASE NEW PRODUCT RELEASE FOR IMMEDIATE

Ext.

德州仪器公司

TEXAS INSTRUMENTS INCORPORATED

PRESSURE

HOUSTON,

TEXAS,

the gage

into

to facilitate

integrating

cali.bration

systems.

Dimensions

weight

is approximately

inches

deep;

by the

ndustrial

Fused

quartz

measured

parts

measured parts

to within

tube

一个部分

范围

one part ranges

in 100, 000 over

in a flush

style

with

convenient

chassis

data

computers

and

19 inches

wide,

12 inches

high,

30 pounds.

The

air

existing

are

rackslides

is manufactured

gage

Group.

Products

Bourdon

Products Bourdon

now available

is equtpped

新部门

The new unit

enclosure.

mounting

are

Gages

Pressure

精密度

Preci.si.on

Quartz

Fused

Instrtrments

Texas

Texas

7, 1964 - (Special)

August

BY TI

ANNOUNCED

RACK-MOUNTING

FOR

GAGE

TEXAS

HOUSTON,

DIVISION

APPARATUS

PRECISION

•

SPEEDWAY

BUFFALO

3609

gages

are

Manager,

Texas

Instruments,

Houston,

Texas

77006.

resolution

高达 500 psi。

up to 500 psi..

压力的

of pressures are

可重复性。

Repeatabi.li.ties

in 100, 000.

wi.thi.n two

and servo-nulling

Manual

mere

information,

write

Industrial

Produc

s Group,

For

available.

instruments

high

feature

市场的推广

邮箱 66027

the Marketing Box 66027,

P.O.

-30-

MAILING

ADDRESS

POST

OFFICE

BOX

66027

•

HOUSTON,

TEXAS

77006

•

JACKSON

6-1411

•

CABLE

TEXINS

358

Ext.

Jack Briner,

8/7/64.

Jack Briner, 8/7/64.

358

INSTRUMENTS

TEXAS

INCORPORATED

•

INCORPORATED •

SPEEDWAY

BUFFALO

3609

FOR

TEXAS,

HOUSTON,

pulse

describing

memory

exercising

Products

Group.

The

capabili.ti.es

是

capabili.ti.es are

included.

For

a copy,

Industrial

data

for

Texas

from

is available

Logic

diagrams

the Marketing

Manager,

Texas

Products

Group,

P. 0.

Box

66027,

and

tests

Industrial

Instruments

高达 20 兆赫。

up to 20 megacycles.

write

published

system

handling

data

requring

applications

communicat-lon

discusses

article

SYSTEMS

of a recently

7, 1964 - Reprints

generators

RELEASE

IMMEDIATE

GENERATOR

DAT A HANDLING

TESTING

August

FOR

PULSE

DESCRIBES

REPRINT

article

AVAILABLE

INFORMATION

TECHNICAL

TEXAS

HOUSTON,

DIVISION

APPARATUS

and performance

Incorporated,

Instruments

Houston,

Texas

photos

77006.

-30-

MAILING

ADDRESS

POST

OFFICE

BOX

66027

•

HOUSTON,

TEXAS

77006

•

JACKSON

6-1411

•

CABLE

TEXINS

)217)\

新产品

新闻稿

面向 ISA Show 发布

NEW PRODUCT NEWS RELEASE FOR ISA SHOW ISSUES

Jack Briner,

8/7 /64.

Jack Briner, 8/7 /64.

Ext.

德克萨斯仪器公司

注册成立

TEXAS INSTRUMENTS INCORPORATED 3609

BUFFALO

SPEEDWAY

•

APPARATUS

TI INTRODUCES

NEWEST

TEXAS,

August

potentiometric

time

在纽约的 ISA 展会现场

at the ISA Show in New York

recoyder,

servo/riter

by Texas

Instruments

Industrial

features

a completely

transistorized

conductive

choppe:r

servo

system

conventional

and infinite

provide

smal

signal

1% oi full

less

1/10%.

Pen

speeds

response

resistance

response resistance

interference

Industry's

Industry's

二，意愿

十月

II, will October

Products

Group,

resolution

newest

be shown

11-15,

ampl•;_fier,

strip-

第一次

for the first

1964.

Manufactured

全新改造

the all-new

recorder

nonmechan;cal

photo-

sli.dewi.re.

The

characteristics

amplifier

not usually

and

found

i.n

是 5 周期

评级

is 5 cycles rating

rejection

scale.

from

per

from per

is specified

FEATURES

is obtained

re solution

of.

circuit

ISA

PERFORMANCE

changes

frequency

RECORDER,

instruments.

detecting

than

detecting than

City,

performance

OUTSTANDING

Exceptional

OUTSTANDING Exceptional

II,

1964 - (Special)

chart

TEXAS

STRIP-CHART

SERVO/RITER

HOUSTON,

HOUSTON.

DIVISION

with

1/ 4% accuracy

Deadband

is almost

. 4 to 24 seconds

are

second

在 10% 满载的情况下

at 10% of full

at 25, 000 ohms.

nonexistent,

available.

Dynamic

scale.

External

Longitudinal

a-c

是 100 分贝的最小值。

继续 -

is 100 db minimum. -more-

MAILING

ADDRESS

POST

OFFICE

BOX

66027

•

HOUSTON,

TEXAS

77006

•

JACKSON

6-1411

•

CABLE

TEXINS

358

第二页

德州仪器推出

最新型

条带图表记录仪

Servo/Riter II

Page Three TI Introduces Newest Strip-Chart Recorder, Servo/ Riter II, at ISA

The

servo/riter

II 是完整的

II is a complete

flush-mounting

models

six channels.

Basic

大量信息的涌入，工业

mounting information, Industrial

d-c

COMPLETE

Products

recorder

line

offering

portable

chart

styles

from

在宽和窄之间，价格是关键。

in wi.de and narrow price

电位器

写入

potentiometer wri.te

LINE

840 美元

of a si.ngle is $840.

营销集团，

the Marketing Group,

P. 0.

channel,

00 FOB

Manager,

Box 66027,

Manager, Box 66027,

-30-

wide

chart,

冲向马桶

one to flush-

plant.

For

Texas

Instruments,

Houston,

and

Texas

77006.

INSTRUMENTS

TEXAS

INCORPORATED

CORPORATE

INCORPORATED CORPORATE

RESEARCH

OFFICES,

13500

•

BUILDING

NORTH

EXPRESSWAY

CENTRAL

DALLAS,

•

TEXAS

立即发布

FOR IMMEDIATE RELEASE

NEWS RELEASE

德州仪器交付首套 F-111A 战机雷达子系统达拉斯讯

TEXAS INSTRUMENTS DELIVERS FIRST RADAR SUBSYSTEM FOR F-lllA DALLAS,

德州仪器公司（Texas Instruments）已向其股东交付了

Texas Instruments Incorporated has del lvered to

August 12--(Special)--

通用动力/沃斯堡公司为 F-111A 研制出了首个独特的前视雷达原型机。

General Dynamics/Fort Worth the first prototype of a unique forward-looking radar for the F-lllA

先进的战斗机，设计飞行时长 2.5 小时。

advanced fighter, designed to fly 2-1/2

The F-111

aircraft.

音速飞行器，由通用动力公司为空军和海军建造。

speed of sound, is built by General Dynamics for the Air Force and Navy.

时代

times the The Air

以及海军 F-111B 战机。

and the Navy F-lllB.

空军将其命名为 F-111A。

Force designates it the F-lllA,

TL 雷达的目的是使飞机在贴近地面的极低空域安全穿越敌方雷达防线。

Purpose of the Tl radar is to allow safe penetration of enemy radar defenses at very low altitudes above the terrain, safely

通过自动控制 F-111 战机

by automatically controlfing the F-111

沿着地表轮廓飞行，从而避免被探测到。该子系统提供了最高的可靠性。

following a contour of the earth's surface thereby avoiding detection. subsystem provides the highest reliability

The F-lllA

什么类似的雷达？

of any similar radar of

这个雷达的一个特点是它能持续自检。

A feature of the radar is that it continuously checks its own

comparable complexity.

模块化插拔式设计赋予了雷达极佳的运行能力，一旦感知到任何边缘化运行或故障，便会自动引导处理。

operation and, sensing any marginal operation or failure, automatically directs the Plug-in modular design gives the radar extremely good

将飞机提升到安全高度。

保持可维护性。

aircraft to a safe altitude. mai ntainabi I ity.

包括地形跟踪在内的几种操作模式均可使用。

Several modes of operation are available including terrain-following

flight at

选择了低空飞行，这是通过一台模拟计算机实现的，该计算机生成的信号显示在一个指示器上，以便飞行员能够

selected low altitudes which is accomplished by use of an analog computer that generates These signals are displayed on an indicator so that the pilot can

爬升-俯冲信号。

climb-dive signals.

按照地形轮廓走。

follow a terrain profile.

飞机前方地形的航图测绘有助于

Ground mapping of the terrain ahead of the aircraft assists the

盲目降低到低空时，安全完成的方法是选择

Blind let-down to low altitudes is safely accomplished by selecting

领航员的航行指引。

pilot in navigation.

雷达控制中所需的高度。雷达已经发展到了成熟的阶段，使得

the desired altitude on the radar control. radars have reached a stage of maturity that enables

他说的是地形跟随。

Tl said that terrain-following

使其功能得以应用于从超高性能飞机（如 F-lllA）等多种领域。

them to lend their function to diverse application from ultra-high-performance aircraft (such as the F-lllA)

to helicopters.

30 -

30 -

MAILING

ADDRESS,

POST

OFFICE

BOX

5474

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE,

TEXINS

杰克·米勒

分机 1206

Jack Miller Extension 1206

新闻稿 NR113

1964 年 8 月 17 日发布

NEWS RELEASE NR113 FOR RELEASE AUGUST 17, 1964

TEXAS

INSTRUMENTS

INCORPORATED

INSTRUMENTS INCORPORATED

SEMICONDUCTOR

BUILDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

•

DALLAS.

TEXAS

DIVISION

新推出用于严苛环境的新型集成电路

NEW Tl INTEGRATED CIRCUITS ANNOUNCED FOR SEVERE-ENVIRONMENT

达拉斯，8 月 17 日已处理

DALLAS, August 17 processed

especially

低功耗系列

A family of low-power

对于恶劣环境

for severe-environment

circuits*

Series 51 I ine.

Incorporated,

high-temperature

storage,

In addition

temperature

Series 51 R network

is subjected

在关键方面

tion in the critical

graphic

使用 TI 的广泛

using Tl's extensive

将会是一个

will be an

Dal las.

致周期性行业的从业者们

to the regular cycling,

to a centrifuge

经过检验的那些

that are tested and

和太空应用

and space applications

51 R 系列，包含 15 种 SOLID CIRCUIT®

Series 51 R, the family of 15 SOLID CIRCUIT®

I leis Tl's standard includes

para I leis Tl's standard includes

integrated

military

integrated military

在德克萨斯仪器公司于 WESCON 展会上公布

nounced at WESCON by Texas Instruments

Designated

APPLICATIONS

semiconductor

Series 51 processing

and hermeticity

test involving

networks

20,000-G

which

checks,

each

constant

accelera

飞机飞行一分钟。

其他 51 系列 R 特殊处理包括：

动态运行——在 125°C 下对每个单元进行 168 小时的老化测试——以及
细致的无线电检查

plane for one minute. Other Series 51 R special processing consists 1 of dynamic operation -burning-in each unit at 125°C for 168 hours -and a careful radio inspection

标准版加价：每个网络 5 美元

Price adder to standard $5. 00 per network

X-ray facility.

对于恶劣环境系列 51 设备

Series 51 units for the severe-environment

in quantities

当前可用的单位

Units now available

in-house

processing

up to 999.

塞尔 51 R 系列包括：

in the Series 51 R family are:

SNR51 0A -

翻转 / 计数器

Flip-flop/Counter

SNR511A -

翻转/计数器

Flip-flop/Counter

使用射极跟随器

with Emitter-follower

more -

Patented

MAILING

德州仪器（Texas Instruments）

by Texas Instruments

ADDRESS

POST

OFFICE

BOX

5012

Incorporated

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

耐恶劣环境应用集成电路

第二页

Tl Integrated Circuits for Severe-environment Applications Page Two

SNR512A -

NOR/NAND 门

NOR/NAND Gate

SNR513A -

NOR/NAND 门电路带射极跟随器

NOR/NAND Gate with Emitter-fol lower

SNR514A -

双 NOR/NAND 门

Dual NOR/NAND Gate

SNR515A -

NOR/NAND 异或

NOR/NAND EXCLUSIVEOR

SNR516A -Triple

Gate

SNR517A -

Clock Drive

SNR518A -

One Shot

SNR519A -

Pulse EXCLUSIVEOR

SNR5101 -

带双预置的触发器

Flip-flop with Dual Presets

SNR5102 -

带双预设和射极跟随器的触发器

Flip-flop with Dual Presets and Emitter-fol lower

SNR51l 2 -

纹波计数器触发器

Ripple Counter Flip-flop

SNR5161 -Triple

2 输入与非/或非门

2-input NAND/NOR Gate

SNR5162 -Triple

2 输入与非/或非门，带一个射极跟随器

2-input NAND/NOR Gate with one Emitter-fol lower

30 -

30 -

(enc..\,It A\Jj, \"\64, .;.e.c- P.c.P"'-cio

Col\, f'\:>I

or,'

[,-s- --:i,-A~~,;.,:;\4~\ c,,c..vi"ts •' ]

(enc..\,It A\Jj, \"\64, .;.e.c- P.c.P"'-cio

Col\, f'\:>I

or,' [,-s- --:i,-A~~,;.,:;\4~\ c,,c..vi"ts •' ]

-J

杰克·米勒

分机 1206

Jack Miller Extension 1206

新闻稿编号 114

发布时间 8 月 17 日

NEWS RELEASE NR 114 FOR RELEASEAUGUST 17

INSTRUMENTS

TEXAS

INCORPORATED

•

INCORPORATED •

BUILDING

SEMICONDUCTOR

CENTRAL

NORTH

13500

DIVISION

一系列低功耗 RTL

SERIES OF LOW-POWER RTL

Tl ANNOUNCES

SEMICONDUCTOR

DALLAS, August 17 -

WESCON 的电网业务

NETWORKS AT WESCON

一系列低功耗的

A series of low-power

double-epitaxial

featuring advanced

integrated

在毫瓦范围内的电路

circuits in the mi II iwatt range

Dallas.

带有保障的数字电路

digital circuits with guaranteed

新的系列包括七款 NANO/NOR。

The new series includes seven NANO/NOR

Howard

温度范围在 -55°C 到 125°C。

range of -55 to 125°(.

通过完整的军事温度测试

through the full military temperature

compatibility

will be

结构和包装的选择

structures and a choice of packaging

在德州仪器公司举办的 WESCON 展会上，

at WESCON by Texas Instruments Incorporated,

announced

TEXAS

DALLAS.

•

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

Circuits

莫斯，该公司综合业务部助理副总裁兼总经理

Moss, Tl assistant vice president and general manager _of the firm's Integrated indicated

department,

with propagation

per stage,

nanoseconds.

delays typically

在七个巡回法院中

of all seven circuits

该系列的一个主要特点，莫斯表示，是既可以采用 TI 的标准

A major feature of the series, Moss said, is the availability either in Tl's standard

10 引线扁平封装或改进型 TO-5 封装

10-lead flat pack or in a modified TO-5 package -

price differential

两个方案之间的差异。

between the two packages.

平板包装。

the flat pack.

网络酒吧是虚构的

The network bar is fabricated

epitaxial

2 to 5 milliwatts

对于这些系列来说，典型情况是——

for the series is typically

功率损耗

that power dissipation

with no

类型编号后缀 11A 11 表示在每种情况下均采用平面扩散工艺。

An 11A 11 suffix to the type number indicates in each case using planar-diffused

double

SN730/730A

buffer,

techniques.

adder,

techniques. adder,

新 RTL 系列中的型号包括 SN729/729A 和 SN73l/731A。

Types in the new RTL series include the SN729/729A SN73l/731A

双路 2 输入门电路

dual 2-input gate,

SN734/734A

half-adder,

SN732/732A

and SN735/735A

小批量定价。

Pricing in smal I quantities

expander gate,

SN733/733A

4-input gate,

25 pieces -

is typified

由双输入双输入门实现

by the dual 2-input gate at

$14.20.

30 (caption next)

$14.20.

30 (caption next)

MAILING

ADDRESS

POST

OFFICE

BOX

5012

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

第二页

Tl 宣布

Page two Tl Announces

低功率 TRL 半导体

Low-power TRL Semiconductor

Networks

PHOTO CAPTION

Al I seven of Tl 1s new low-power package

RTL 网络已经可用。

RTL networks are available

（左侧）以及行业标准

(left) and the industry standard

flat-pack

(right).

在这两种调整后的情况下

in both the modified

TO-5

[tVlc..\' \7 A.V'J. l ~ U-1 I 5-e_e__

f,(2_.f 'nu-to ,C…,c- l\.

[tVlc..\' \7 A.V'J. l ~ U-1 I 5-e_e__ f,(2_.f 'nu-to ,C...,c- l\.

[ L.~>.vYowe.

-\12-L-

'?eV'-'-\l-<>"'-~vdo<

L, r

网络。

Ne.-t~ork.sJ

.--~

O .--~

·l

杰克·米勒

分机 1206

Jack Miller Extension 1206

新闻稿 NR100

1964 年 8 月 24 日发布

NEWS RELEASE NRl00 FOR RELEASE AUGUST 24, 1964

TEXAS

INSTRUMENTS

INCORPORATED

SEMICONDUCTOR

INCORPORATED SEMICONDUCTOR

BUILDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

•

DALLAS.

TEXAS

DIVISION

全平面型 PNP 斩波器（带外延基极）已发布

ALL-PLANAR PNP CHOPPERS WITH EPITAXIAL BASE ANNOUNCED

LOS ANGELES,

August 24 -The

semiconductor

硅切片晶体管被宣布为 NPN 2N2432 的改进型。

si Iicon chopper transistors were announced ments to the NPN 2N2432,

industry's

第一块平面外延

first planar-epitaxial

今天我在这里，得感谢德州仪器公司。

here today by Texas Instruments.

新设备

the new devices

are available

as the 2N2944,

PNP 基地

base PNP PNP comple

2N2945 and

2N2946.

平面结构的优势

2N2946. The planar construction advantage

新款直升机提供了该线路。

of the new choppers offers the circuit

在老旧合金和机电产品之上

over older alloy and electromechanical

平顶结构的坚固性，以及其特性。

ruggedness of the planar construction, acteristics.

Breakdown voltage

In addition

极致

to the extreme

2N2944 系列产品提供了改进的电气性能。

the 2N2944 series offers improved electrical

char

40 伏特为最小值，而 ICBO 为 25 纳安最大值。

is 40 volts minimum, while ICBO is 25 nanoamps maximum

在 100 摄氏度下，失调电压已封装。

at 100 degrees C, and offset voltage is packaged

types.

designer a considerable

is 0.8millivolts

最大值为 200 微安。

maximum at 200 microamps.

The unit

在 TO-46 封装中。

in the TO-46 case.

德州仪器表示，三十多种较老型号的合金和机电式斩波器可以被替换。该设备的报价，器件可立即提供。更多信息

Texas Instruments states that more than thirty older alloy and electromechanical of choppers can be replaced Prices of the units, Devices are immediately Additional

information

Tl distributors,

根据这两家新平面式切割机公司的情况。

by these new planar choppers.

在 1 到 99 的范围内

in one to ninety-nine

quantities,

16 美元至 204 美元。

range from $8.00 to $13.88.

我们有现货可售，也可通过授权经销商购买。

avai Iable from stock and through authorized

Tl distributors.

关于 2N2944 系列的详情，可从 TI 现场销售代表处获取。

on the 2N2944 series is avai Iable from Tl field sales representatives,

或者直接从德州的达拉斯出发。

or direct from Tl, Dallas.

30 -

30 -

MAILING

ADDRESS

types

POST

OFFICE

BOX

5012

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

CUT LINE

全平面 PNP 斩波器

ALL-PLANAR PNP CHOPPERS

These three T0-46

transistor packages

外延型 PNP 斩波管

2N2946

PNP choppers with epitaxial 2N2946.

base.

contain

第一个全平面结构

first all-planar

它们是德州仪器 2N2944 型产品，

They are Texas Instruments 2N2944,

新型直升机同时提供电动版本

The new choppers offer both electrical

更为老旧的合金和机电设备

older alloy and electromechanical

the industry's

and mechanical

我们提供多种类型的直升机。

types of choppers.

silicon

2N2945 and

advantages

over

[e.v1d '# l.) ?..l-J A.v'j· ll'.H0'-\,,e.e-P,R. \}ho-\,, (.J\,('t>("

D•;:;·l

.Ji

•

-=• _..

4tJ

威斯科新闻稿

即时发布 1964 年 8 月 24 日

WESCON NEWS RELEASE FOR RELEASEAUGUST 24, 1964

TEXAS

杰克·米勒，分机号 1206

Jack Mi Iler, Ext. 1206

INSTRUMENTS

INCORPORATED

SEMICONDUCTOR

INCORPORATED SEMICONDUCTOR

BUILDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

两大巨头

宣布

达拉斯，8 月 24 日 -·

TWO MONOLITHIC ANNOUNCED DALLAS, Aug. 24 -· featuring

•

DALLAS.

TEXAS

DIVISION

BROADBAND AMPLIFIERS

按得州仪器公司的标准。

BY TEXAS INSTRUMENTS

两个高度通用的

rwo highly versatile

differential

amplifiers

0 毫居里带宽和 36 分贝增益已公布

l 0-mc bandwidth and 36-db gain were announced

在集成电路领域

in integrated-circuit

form

本周在这里由德州仪器公司（Texas Instruments）派遣。

here this week by Texas Instru

ments Incorporated。

打字为 SN458 和 SN476，

Charles Phipps，Tl's Integrated

从频率角度来看

ments Incorporated. Typed as SN458 and SN476, Charles Phipps, Tl's Integrated in terms of frequency

新的低点

the new low-level

epitaxial

电路营销经理，你好，

Circuits marketing manager, 11

与收益。

response and gain.

条款已经进行了说明。

circuits were described

译为：“高性能”

as "high-performance

Typical frequency

bandpass characteristics

is typically

生成信号

for signal-generation

这次行程的第二部分 -

This second section of the circuit tion -

4 mv.

capacitance-coupled

提供一个典型的 51 dB 单端增益。

offers a typical gain of 51 db single-ended

fore overloading

is typically

or differential

对于大量应用场景来说，接收。

for a large number of applications. receiving

以及 42 dB 的差分信号。

and 42 db differential.

alternative,

output provides

在 3 到 8 兆赫兹范围内

到直接耦合部分

in the 3 to 8 megacycle to the direct-coupled

薄膜发出的信号

signals from thin-film

first sec

以及 57 分贝的差值。

and 57 db differential.

输入信号为

Input signal be

两个阶段中的投入与产出，

inputs and outputs in both stages,

并且可以应用。

and can be applied

amplifier.

This versatility

使得这个回路变得有用

makes the circuit useful

菲普斯提到的其中一个主要用途是作为“感觉放大器”。

A major use cited by Phipps is that of a sense amplifier,

记忆电路和放大

memory circuits and amplifying

将它们提升至一个水平，这个水平将……

them to a level which will

(more)

MAILING

ADDRESS

POST

range.

2 mv.

网络的特征是将差分信号作为单端信号来传输。

The network features differential either as a single-ended

A second,

applications

networks

两台放大器的响应

response of the two amplifiers

从 de 到 a 10-mc 3-db 点；典型增益为 36 db 单端

过载前的输入信号

is from de to a 10-mc 3-db point; typical gain is 36 db single-ended Input signal before overloading

OFFICE

BOX

5012

DALLAS

TEXAS

75222

ADAMS

5-3111

CABLE

TEXINS

二、两块巨石

page two Two Monolithic

德州仪器宣布推出宽带放大器

Broadband Amplifiers Announced by Texas Instruments

触发器逻辑电路。

脉冲放大器，

trigger logic circuitry. pulse amplifier,

电路的其他特性也使其具有适应性。

of the circuit also make it adaptable

独特之处

The unique characteristics

as a

他补充道。

he added. Supply

SN476 的输入和输出阻抗分别为 2000 欧姆和 600 欧姆。电压为 +4.5 伏和 -6 伏（电流 19 毫安），功耗为……对于 100 毫伏输入，过载恢复时间为 100 纳秒。SN458 的电路特性为……感测放大器的阻抗。

Input and output impedance to the SN476 are 2000 and 600 ohms, respectively. voltages are+ 4.5 volts and -6 volts (drawing 19 ma), and power dissipation Overload recovery time for 100-mv input is 100 nanoseconds. The SN458 features circuit characteristics pedance for sense-amplifier

applications

identical

200 兆瓦（在 25°C 条件下）。

is 200 mw at 25°C.

共模抑制

Common-mode rejection

is 60 db.

对于 SN476 机型，增加了低投入输入功能。

to the SN476, adding low-input im

and a separate

input ground terminal for avoiding

monolithic

“主切片”条用于这两条电路

"Master Slice" bar for the two circuits

地环路与地噪声。高度复杂的硅外延片包含 50 个扩散元件。

ground loops and ground noise. The highly complex silicon epitaxial contains 50 diffused components,

包括 17 个 NPN 晶体管。

including 17 npn transistors,

阻值从 20 到 10,000 欧姆的电阻器。

resistors ranging in value from 20 to 10,000 ohms.

两个 60 微法电容

two 60-pf capacitors

and 31

大量定制的“大师”

A large number of customized "Master

“切片”电路的各种变体可以快速且经济地生产出来。

Slice" circuit variations can be produced quickly and economically

只是改变一下

simply by changing the

铝互连沉积模式的图案。

密封在 Tl 1s 行业标准封装中。

pattern of deposited aluminum interconnections. sealed in Tl 1s industry-standard

这两个电路都是密封的。

Both circuits are hermetically

flat package,

measuring

1/4 英寸 × 1/8 英寸 × 1/32 英寸，重 0.1 克。新型 SN458 和 SN476 单元补充了 Tl 1s 目录网络，包括“Series 52 Uteman 系列”。

1/ 4 by 1/8 by 1/32 inch, and weighing O. l gram. The new SN458 and SN476 units supplement Tl 1s catalog networks, including the "Series 52 uteman Series,"

operational

放大器以及“敏

amplifiers and the linear units of the "Min

这包括四家综合性

which include four general-purpose

a driver switch.

30 -

30 -

线性半导体产品线

lines of linear semiconductor

amplifiers,

a demodulator chopper,

and

[ e"'-'-

':2~

Avj

[~I O /,..J b

Cv"-

\c101.-\ i'><'e.

ll t:\V""-v'

1 '\·

ll t:\V""-v' 1 '\·

f1, ) ()h

fil.(

f1, ) ()h fil.(

新闻稿 NR104

1964 年 8 月 24 日发布

NEWS RELEASE NR104 FOR RELEASE AU GUST 24, 1964

杰克·米勒

分机号 1206

Jack Mi Iler Extension 1206

IN STRL

TEXAS

\1 E~TS

INCORPORATED

SEMICONDUCTOR

INCORPORATED SEMICONDUCTOR

LDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

CLOSE-TOLERANCE

•

DALLAS

TEXAS

DIVISION

而那正是场效应晶体管宣告问世之时。

AND CHOPPER FIELD-EFFECT TRANSISTORS ANNOUNCED

洛杉矶，

晶体管

单位，

LOS ANGELES, transistors units,

August 24 -Texas

here today.

三种设备

The three devices

with important

is a P-channel

Instruments

design parameters

chopper

field-effect

高精度

The close-tolerance

announced

两个系列的场效应

two series of field-effect

仅凭一系列数字来描述的，就显得过于刻板了。

of one series are described tightly

transistor

控制和保证。

control led and guaranteed.

单位已经开发完成

units were developed

针对 TI 为满足电路需求而开发的方案，此前型号的场效应管并未体现出相应的特性。

by Tl in answer to the needs of circuit

签署者在过去发现，那些未经定量评定的旧式场效应晶体管（FET）类型，往往并不具备明确的特征。

signers who have found older types of FET s not characterized

voltages,

circuitry.

新的 P 通道

The new P-channel

closely

characterized.

typical);

low c

155

Tl transistors

tightly

Electrical

characteristics

(3 pf, typical);

have guaranteed

equivalent

noise

design parameters

包括新 FET 的

of the new FET's include

低噪音（0.15 微伏）

low noise (0.15 microvolts

足够更多了

enough for more

在 O.6 na maxi mum 和所有其他重要因素方面，

at O. 6 na maxi mum, and al I other important

IGSS guaranteed

另一系列

The other series

(TIS05).

sophisticated

作为"紧公差"

as "close-tolerance"

低 IGSS（0.3 不，

low IGSS (0.3 no,

每股 1/2 美分；以及 3 对 1 的 Yfs。

per cps 1/2); and 3 to 1 Yfs

范围。

应用

电容

range. Applications capacitance

requiring

choppers

能够最好地利用

can best utilize

关于场效应（field-effect）的性质

of the nature of field-effect

那些泄漏率低的

that offer low leakage,

新的 P-chonnel 设备，

the new P-chonnel devices,

chopper

低“开”态电阻，

low "on" resistance,

field-effect

偏移误差被最小化。

offset error is minimized

transistors.

该设备的

of the device

只有 90 欧姆，yf/ CISS

is only 90 ohms, and yf/CISS

giving

performance.

一些电路部件

So~e of the circuitry

includes

choppers,

analog

switches,

以及高收益

and high-gain

Because

当使用 TIS05 时。

when the TIS05 is used.

“导通”电阻的典型值

改善了高频性能

Typical value for "on" resistance improved high-frequency

and low

这种情况极为罕见。

is very high,

使用这些单元

using these units

amp I ifiers.

more -

more -

MAILING

ADDRESS

POST

OFFICE

BOX

5012

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

精密公差

第 2 页

Close-tolerance Page 2

和 Chopper 场效应

and Chopper Field-effect

这两款新型场效应晶体管均已上市。

Both of the new Tl field-effect available

即期交割

for immediate delivery

Transistors

设备被包装起来。

devices are packaged

from stock.

在 4 的引导下

in the 4-lead

Prices are:

1-99

100-999

2N3573

$21 .75

$14.50

2N3574

17 .25

11 .50

2N3575

18.60

12.50

TIS05

30.00

20.00

30 -

30 -

T0-18,

and are

杰克·米勒

分机 1206

Jack Miller Extension 1206

新闻发布 NR109

发布日期：1964 年 8 月 24 日

NEWS RELEASE NR109 FOR RELEASE AUGUST 24, 1964

INSTRUMENTS

TEXAS

INCORPORATED

NEW Tl GLASS "DERBY" DO-4 SILICON

在高级阶段

in an advanced

single

a new 3000-volt

今天工具公司宣布

Instruments today announced

译文不允许高压运行

which permits high voltage operation

package

high altitudes.

extremely

该系列产品可节省高达 80% 的空间。

series can pay off in space savings ranging up to 80%

新的 TI l N4537-40

the new Tl l N4537-40

DO-4 outline,

当用于高压环境时

when used in high-voltage

described

新的方案，

The new package,

Reduced component

成堆的钞票和桥梁。

stacks and bridges.

作为一个玻璃 11 德比 11 设计，

as a glass 11derby 11 design,

operation

in rarefied

construction

single-junction

新的 1 N4537-40 分销商，

The new 1 N4537-40 distributors,

series,

This permits

rectifiers.

capability

rectifiers

通过提艾利销售办事处和授权

through Tl sales offices and authorized

定价如下：

100-999

is priced as follows: 100-999

1 N4537

1 N4538

12.10

1 N4539

13.60

1 N4540

15.30

30 - (Caption

MAILING

30 - (Caption

MAILING

ADDRESS

POST

OFFICE

BOX

5012

•

DALLAS.

TEXAS

Next)

75222

Next) 75222

并且具有低正向压降的特性

and provides a low forward drop

3 安培的正向额定电流。

forward current rating of 3 amperes. available

feet.

导弹和航天应用领域。

missile and space applications.

在这种高压环境中实属罕见

rare in such high-voltage

保证了更高的可靠性，降低了功耗，平均峰值电压为 1.85 伏。

assures added dependabi Iity, reduces power requirements of 1 .85 volts peak at the average

增大弧长

increases the arc-over

高可靠性和高海拔

（注：因原文存在明显空格分隔，无法判断是否为故意断字，故严格按照输入形式输出。）

high rel iabi Iity and high altitude

非常适合航空业。

well suited to aircraft,

这使新的 TI 机组特别分散。

makes the new Tl units particularly Diffused,

ratio,

高电压与体积比

of high voltage-to-size

This combination

increased

高达 2500 伏特，最高可达 70,000 伏特。

up to 2500 volts as high as 70,000

atmosphere

greatly

DO-4 高顶礼帽

DO-4 top-hat

在终端和外壳之间，超越传统。

between terminal and case over conventional

high-voltage

count,

而我们同样可以实现更低的成本。

and lower cost can also be achieved.

通过更少的互联互通，

through fewer interconnections,

reliability

符合 JEDEC 标准

meeting the JEDEC

1500 到 3000 伏特的评级，装在一个包装里

ratings from 1500 to 3000 v~lts in a package

通过提供电压

By providing voltage

distance

RECTIFIERS

高海拔地区的能力

CAPABILITY AT HIGH ALTITUDES

提供高压电

PROVIDE HIGH-VOLTAGE

洛杉矶，8 月 24 日 - 得克萨斯州

LOS ANGELES, August 24 -Texas

TEXAS

DALLAS.

DIVISION

SEMICONDUCTOR-COMPONENTS

结点硅整流器

junction silicon rectifier

•

EXPRESSWAY

CENTRAL

NORTH

13500

•

BUILDING

SEMICONDUCTOR

•

ADAMS

5-3111

•

CABLE

TEXINS

PHOTO CAPTION

新型 3000 伏硅整流器

适用于高空运行

由德州仪器为高电压应用开发

NEW 3000-VOLT SILICON RECTIFIER IDEAL FOR HIGH-ALTITUDE OPERATION Developed by Texas Instruments for high-voltage, derby

junction,

硅整流器提供 2500 伏的扩散型整流器。

silicon rectifier offers 2500-volt diffused rectifiers,

designated

但符合 DO-4 大纲标准，且情况允许高压电。

yet meet the standard DO-4 outline. and case permits high-voltage

operation,

这块新玻璃

this new glass

capability

最高可达 7 万英尺。

up to 70,000 feet.

l N4537-40,

电压等级从 1500 伏到 3000 伏。

are rated from 1500 to 3000 volts,

Greatly

operation

high-altitude

电弧击穿增加

increased arc-over

在稀薄的大气层中。

in rarefied atmospheres.

新的单一

The new single

终点站之间的距离

distance between terminal

[el'\£.\, ~ 2-) ~'1 ~\Jj

1q(,I,.,\]~

r,.e.,p~6"\-.,C.-\1,

or,

r,.e.,p~6"\-.,C.-\1, or,

新闻稿 NR103

1964 年 8 月 24 日发布

NEWS RELEASE NR103 FOR RELEASE AU GUST 24, 1964

杰克·米勒

分机号 1206

Jack Miller Extension 1206

TEXAS

INSTRUMENTS

INCORPORATED

INSTRUMENTS INCORPORATED

SEM !CONDUCTOR

建造业

BU I LOI NG

•

13500

NORTH

CENTRAL

SEMICONDUCTOR-COMPONENTS

ECONOMY

EXPRESSWAY

•

DALLAS.

TEXAS

DIVISION

PNP 和平面单结

PNP AND PLANAR UNIJUNCTION

TRANSISTORS

由 Tl 介绍

INTRODUCED BY Tl

洛杉矶，晶体管，

LOS ANGELES, transistors,

August 24 -

designed

硅塑料封装

Silicone-plastic-encapsulated

用于消费和工业领域。

for use in consumer and industrial

如今由德州仪器（Texas Instruments）拥有。

today by Texas Instruments.

Part of Tl's "Silect"*

一共 23 种不同的。

total of 23 different

types currently

"Silect"

平面单结晶体管阳离子

The planar unijunctions cations,

including

rugged,

applications,

transistor

line,

and PNP

发布新款设备

were announced the new devices

here

make a

available.

TIS02) 的目标是

TIS02) are designed

电机速度控制器，

motor speed controls,

这是一个极其复杂的整体方案。

They are extremely package.

(TIS0l,

planar unijunction

用于多种多样的用途

for use in a wide variety

waveform generators,

electronic

由于平面的结构设计

due both to the planar construction

organs,

以及硅材料业务。

and to the silicone

使用这些设备的设计师将拥有额外的优势

Designers using the devices wil I have the added advantages

这句话语法不完整，更像是产品零件清单的一部分。结合上下文（家庭设备、电器相关），最合理的译法是：

用于电器和定时器的塑料件。

（注：原句是碎片化的英文短语，中文需要补出语义才能通顺。如果你提供更多上下文，我可以调整得更精准。）

of appli and timers. plastic

高内在价值

of high intrinsic

隔离比（TIS02 中最小 0.68，最大 0.82）以及低漏电流

standoff ratio (0.68 minimum, 0.82 maximum in the TIS02) and low leakage

(10 ma, maxi

mum )。

PNP “Silect”

mum). PNP "Silect"

units,

introduced

complementary

symmetry circuits

are designated

TL TIS03 和 TIS04。

Tl TIS03 and TIS04.

首次，将获得广泛应用。

for the first time, will find wide applications

对于中功率消耗而言

and for medium-power Dissipation

amp I ifiers.

新发行的 PNP 单位

The new PNP units

300 兆瓦，BVCBO 是 1550 伏特。

is 300 mw, and BVCBO is 1550 volts

(TIS04).

Additional

(TIS04). Additional

information

Tl 地区销售办事处，

Tl field sales offices,

关于新加入的业务

on the new additions

authorized

Tl distributors,

致“沉默者”

或者直接

to the "Silect" or directly

这条线路是可用的。

line is available

来自德州仪器，

from Texas Instruments,

30 -

30 -

Trademark,

MAILING

ADDRESS

Texas Instruments

POST

OFFICE

BOX

5012

Incorporated

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

达拉斯。

from Dal las.

杰克·米勒

1206 分机

Jack Miller Extension 1206

新闻稿第 11 号

发布日期：1964 年 8 月 24 日

NEWS RELEASE NRl 11 FOR RELEASE AU GUST 24, 1964

TEXAS

INs-rRUMENTS

INCORPORATED

INs-rRUMENTS INCORPORATED

SEMICONDUCTOR

BUILDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

新高电流

NEW HIGH-CURRENT

GERMANIUM

August 24 -A

对于成本敏感型的

for cost-critical,

h;gh-power

50 安培系列工业产品

new series of 50-amp industrial

DALLAS.

TEXAS

POWER TRANSISTORS

在高级 TO-3 封装中引入

IN ADVANCED TO-3 PACKAGE INTRODUCED

LOS ANGELES,

•

DIVISION

德克萨斯仪器公司

BY TEXAS INSTRUMENTS

germanium

power transistors

电源供应部门发布了公告。

power supplies was announced

designed

今天在这里，来自德克萨斯州。

here today by Texas

工具。

类型为 TIG05-TIG10，

20 到 80 之间

Instruments. Typed as TIG05-TIGlO, 20 to 80 at le=

（9J-C = 0.5 C 0 /瓦特）这一点尤其突出。

(9J-C = 0.5 C 0 /watt) as particularly

are additional

important

high-power

operating

供电方面

to power-supply

更大的 TO-36 晶体管。

larger TO-36 transistors.

power dissipation

在最小交汇点处

at minimum junction

voltage

low thermal

resistance

engineers

resistance engineers

设计师。

将允许进行更多设计。

designers. will permit the design of more

以前只有价格更高的（设备）才能实现的技术。

formerly possible only with more expensive

它们的低热

Their low thermal

temperature,

allowing

更高的可靠性

and higher reliability

减少了电力损耗，从而提高了

reduces power losses and thus increases

power supplies.

Low saturation

引用于 Tl 应用程序

cited by Tl application

advantages

and inverters

and significantly

coefficient bêta allant de

beta ranging from

case temperature.

这些设备所提供的功能

offered by these devices

converters

在许多线性串联稳压器中

in many linear series regulators

at 25°(

18 安培 = 3 安培）且极为

18 = 3 amps) and exceptionally

30 amps,

高电流能力且经济实惠

The high current capability economical

提供高额担保

offer a high guaranteed

30 安培和 150 瓦功耗

30 amps and 150 watts dissipation

（0.5 伏特）

(O.5 volts at le=

voltage

新的晶体管

the new transistors

resistance

assures maximum

a reduction

of circuit

在任何应用场景中。

in any application.

circuit

efficiency

高贝塔值配合高当前收益，会在增长中取得回报。

High beta at high current pays off in increased

components

Low saturation

especially

efficiency

在低电压领域

in low-voltage

在任何电压下

at any voltage

等级。

新的 TIG05-TIG10 结构。

冷焊。

level. The new TIG05-TIG10 construction. cold-weld

series features

基础套装

密封

The basic package hermetic

一个全新的 TO-3 封装

a new TO-3 package

是一个圆盘形状的。

is a disk-shaped

高可靠性公章。

seal for high reliability.

全线铜质

with all-copper,

cold-weld

装配方式，允许同心结构

assembly which permits a concentric

新的方案，

The new package,

first introduced

with the

(more)

MAILING

ADDRESS

POST

OFFICE

BOX

5012

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

第二页

新高

Page two New High-current

锗功率晶体管

Germanium Power Transistors

达拉斯公司的 Tl3027-3031 系列设备。

Dallas firm's Tl3027-3031 series, devices.

这些体现在了

These are reflected

导致了大量的

results in substantial

与同类产品相比的成本节约

cost savings over comparable

T0-36

在以下价格中：

in the following prices:

T0-3

100-999

T0-41

100-999

TIG05

$ 2.90

TIG08

$ 3 .15

TIG06

3.70

TIG09

3.95

TIG07

3.90

TIGlO

4.15

30 -

30 -

CAPTION

新型 50 安培锗功率晶体管

采用先进的 T0-3 封装

NEW 50-AMP GERMANIUM POWER TRANSISTORS IN ADVANCED T0-3

PACKAGE ANNOUNCED

一段新的 50 安培锗功率晶体管系列，融合了多种特性

A new series of 50-amp germanium power transistors combines, characteristics

formerly available

只限于规模更大的项目上。

only in larger,

德州仪器为成本敏感型应用推出了一种新型冷焊技术。

by Texas Instruments for cost-critical a new cold-weld

在一款全新的 Tl-3 套装中，

in a new Tl-3 package,

more expensive T0-36

industrial applications,

QJ-C = 0.5 C 0 /watt).

devices.

TIG05-TIG10

the TIG05-TIG10

T0-3 封装提供高功耗

T0-3 package providing high power dissipation

以及极低的热阻

and very low thermal resistance

BY Tl

已开发系列的功能

Developed series features

（25°C 外壳温度下 150 瓦）

(150 watts at 25°C case)

[ e\-"\L.-\.2-H A.\J:j. '0 (, '-\

I 7ee.

[ e\-"\L.-\.2-H A.\J:j. '0 (, '-\ I 7ee.

M,,A-""

·1-.,""'

fowe(

f, a…

Pho-i:"'.(..,l I' C:01 6•

f, a... Pho-i:"'.(..,l I' C:01 6•

\<""WV'-s; ~-\ t>r

I. i

1 -~

唐·沙林豪森

转 593

Don Scharringhausen Extension 593

新闻稿 NR5922

1964 年 8 月 24 日发布

NEWS RELEASE NR5922 FOR RELEASE AUGUST 24, 1964

德州仪器公司

半导体

TEXAS INSTRUMENTS INCORPORATED SEMICONDUCTOR

BUILDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

•

DALLAS.

TEXAS

DIVISION

德州仪器推出新型多功能

TEXAS INSTRUMENTS FEATURES NEW MULTI-FUNCTION

洛杉矶，8 月 24 日

LOS ANGELES, August 24 -

集成电路在威斯康星会议登台亮相

INTEGRATED CIRCUITS AT WESCON

德州仪器持股的焦点

Focal point of the Texas Instruments participation

WESCON 展会传来的消息是

WESCON Show was the announcement

在 11 个新型 SOLID CIRCUIT® 中

of 11 new SOLID CIRCUIT®

它们集成了两、三或四种电路功能——多功能芯片。

which combine two, three or four circuit functions multi-function

网络有四种不同的

networks are in four different

Describing

新的网络，

the new networks,

在半导体元件中，将多种功能集成于一个封装内。

of the Semiconductor-Components functions in a single package

Cecil

semiconductor

在一个单一的巨型实体中

in a single monolithic

networks*

一块硅锭。

bar of silicon.

The

逻辑系列。

P. 多森，德州仪器副总裁

logic families. P. Dotson, Tl vice president

division,

effectively

in 1964 1s

Dallas,

and general

manager

指出，将几个

pointed out that placing several

circuit

降低每电路的成本

reduces the cost per circuit

function,

thus reducing

Dotson 解释道，这一举措能够在提升系统可靠性的同时降低系统成本。

system cost while improving system reliability. Dotson explained

that substantial

网络包数量越少，意味着外部问题也越少。

smaller number of network packages packages mean fewer external problems.

Fewer packages

built simultaneously

improvements

给定系统所需要的数据。

required for a given system.

interconnections

在一个单一结构中

in a single structure

在包装行业

in the packaging

电路功能数量

阶跃函数

number of circuit functions step-function

decrease

competitive

with discrete

结果来自

result from the

更少的多功能型

Fewer multi-function

而且机会也更少了

and fewer opportunities

for reliability

同时也意味着更低的系统成本，因为原本需要三到四条线路。

also mean lower system cost, since three or four circuits

超出建造一个电路所需的那部分。

over that required to build one circuit. accumulated

在成本与可靠性方面

in cost and reliability

stage,

仅有微薄的制造业规模。

with only a nominal manufacturing

cost increase

绝大多数网络设备制造业务

The bulk of network manufacturing

costs is

而这些成本几乎

and these costs are virtually

由酒吧完成。

performed by the bar.

在有效组件中

in the effective components

The result,

整合成本

cost of integrated

固定不变，无论

fixed regardless of the

Dotson said,

circuits,

is a dramatic

但这一做法最终会让他们彻底付出代价

making them fully

对于大多数应用场景而言。

for most applications.

(more)

特此寄出

Patented by Tl

MAILING

ADDRESS

POST

OFFICE

BOX

5012

•

can be

DALLAS

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXIN5

新功能的第二页

New Multi-function Page 2

Integrated

新多功能中型电力系列 53。

The new multi-function Series 53 medium-power

Circuits

该网络包含德州仪器 Series 51 低功耗系列中的单元。

networks include units in Tl's Series 51 low-power

line，再加上两个使用高速网络的新系列。

line, plus two new series of networks using the high-speed

DTL 逻辑配置。

全军用温度范围

DTL logic configurations. full military temperature

所有这些线路，除了一条以外，

Al I these network I ines, with one exception,

NAND/NOR

在接下来的输出中，

fol lower outputs,

first introduced

具备双预置功能

with dual presets,

中等功率领域的新增项目

additions to the medium-power

C、你是 SN5360 四路线、二输入

are the SN5360 quad 2-input

SN1005 “一锤子买卖。”

SN1005 "One Shot."

NAND/NOR

53. 与/或/反转

53 AND/OR/INVERT

gate,

The 15 compatible

DTL 网络改进版本的 53 系列产品线

Series 53 line of modified DTL networks

SN5331 三路三输入

the SN5331 triple 3-input

made available

networks with propagation

outputs.

capacity-driving

NAND 门与 S N743 8 输入

NAND gate and the S N743 8-input

NAND/NOR

5 至 45 纳秒的延迟。

delays of 5 to 45 nsec.

gate,

Multi-function

多功能设计，扇出数为 15 的型号为 SN742。

and fan-out of 15 are the SN742

approach

包含 SN472 双

include the SN472 dual gate which provides three

新的双外延

The new double-epitaxial

每个阶段的电力消耗为 5 至 15 兆瓦，

power drain of 5 to 15 mw per stage,

并且在 25°C 环境下具有 1 伏特的抗噪能力。

and noise immunity of 1 volt at 25°C.

(more)

网络才是

networks are the

NAND gate.

and the SN473 AND-NOR-NAND

温度范围为 0°C 到 125°C。

range is 0° to 125°C.

The Series

其他双外延

Other double-epitaxial

一个封装里的多个逻辑层级。

levels of logic in a single package.

temperature

and the

提供 25 纳秒传播

provides 25-nsec propagation

capability

采用多功能三输入的特殊 DTL 门电路

Special DTL gates that employ the multi-function 3-input

gate,

1963 年底进入保险行业——至今

to industry in late 1963 -now

门电路和 S N678 四与非门。

gate and the S N678 quad NAND gate.

提供卓越服务的 TTL 网络

TTL networks that offer excellent

NAND/NOR

灵活性给设备设计师带来了便利。

flexibi Iity to the equipment designer.

600 毫伏噪声容限，以及单端

600-mv noise immunity, and single-ended

dual 4-input

up to 20.

TTL 逻辑配置系列

series in the TTL logic configuration

S N676 双 NA 与/或非

S N676 dual NA ND/NOR

circuits in

SN5370 双“异或”门

the SN5370 dual "EXCLUSIVE OR" gate,

逻辑带来相当可观的（收益）。

logic offers considerable

一段新的高速延迟，

A new high-speed delay,

gate,

53 系列保险产品线——首先

The Series 53 line -first

包括总计 11 个兼容

includes a total of 11 compatible

在 WESCON 公司，

at WESCON are

配套的 SN5 l 11 型，具备双预设功能和发射器。

the companion SN5 l 11 with dual presets and emitter

Series 51 系列功耗低至 2 毫瓦，扇出能力也很出色。

Series 51 feature power drains as low as 2 mw and fan-out

SN5311 双 5 输入

the SN5311 dual 5-input

1961 年，包括 SN5161。

in 1961, include the SN5161

其他第 51 系列网络也宣布了

Other Series 51 networks announced

以及 SN5112 型纹波计数器/触发器。

and the SN5112 ripple-counter/flip-flop.

Multi-function

operate over the

gate 和 SN5162，后者是同一型号，外加一个发射极。

gate and the SN5162 which is the same unit plus an emitter

SN5101 触发器的门电路跟随器输出。

follower output for one of the gates. the SN5101 flip-flop

TTL and

range (-55° to +125°C).

四个新款加入 51 系列 RCTL 产品线，三路双输入

Four additions to the Series 51 RCTL line, triple 2-input

line,

DTL 网络具有典型的运营特征。

DTL networks feature typical Operating

新款多功能一体机

第 3 页

New Multi-function Page 3

Additional

Integrated

semiconductor-network

总共推出了 37 种新口粮。

a total of 37 new types ration,

Circuits

目录类型已公布

catalog types announced

包含一条七低功率数码

include a Iine of seven low-power digital

以及一组 15 套经过处理的 51 系列单元

and a group of fifteen Series 51 units that have undergone

针对严重环境问题的

for severe environmental

making

circuits in the RTL configuRTL 配置中的电路

circuits in the RTL configu

特殊加工与测试

special processing and testing

applications.

新的线性半导体产品频率

New linear semiconductor offering frequency

由 Tl 在西海岸电子展（WESCON）拍摄

by Tl at WESCON -

Tl 在 WESCON 展会上推出的两款宽带差分网络

networks from Tl are two broadband differential

从 10 美元到 10 美元，以及两台新的通用

response from de to 10 me, and two new general-purpose

amplifiers,

放大器

amp Iifiers that

补充 TI 的 Series 52 系列产品。新增这些网络后，TI 提供的目录半导体网络总数达到 73 个。

supplement Tl's Seri es 52 Ii ne . The addition of these new networks brings to 73 the total number of catalog semiconductor networks offered by Tl .

30 -

30 -

~Vic.I,#'

r) ,Z.!…\Av~-(1(.t.T}

r) ,Z.!...\Av~-(1(.t.T}

[Ne.~n01+~- '1"'c ,t,vt. ·1

FUNCTIONAL

简单版本

三个套餐

24 个互连

Simple Version Three packages 24 Interconnections

REQUIREMENT

两个排他的“或”

TWO EXCLUSIVE OR'S

Multi-function

Version

一个组合

12 个互联点

One package 12 Interconnections

Vee

' I

r------L-----,

r------L-----, I I I

净储蓄

双包装

（减少 67%）

NET SAVINGS TWOPACKAGES (67o/oFEWER)

-,-_J

12INTERCONNECTIONS

(50°~ FEWER)

12INTERCONNECTIONS (50°~ FEWER)

-½

Vee?

-½ Vee? I

r--1-7

r--1-7 I

I I

L----,-----J

L----,-----J I

-½

说明使用多功能半导体网络在封装和互连方面带来的具体节约效果。由于右侧的网络有效执行了六项 NAND 功能，封装数量从三个减少到一个。由于这些功能全部在内部连接，并使用共同的电源和回流端子，因此消除了十二个连接点。这些节省是可以预期的，因为多功能半导体网络的概念只是对基本集成电路概念的更充分实现，而工艺控制和设计经验的重大进步使其成为可能。

Illustration of specific savings in packages and interconnections resulting from the use of multi-function semiconductor networks. Since the network at right effectively performs six NAND functions, package count is reduced from three to one. Because these functions are all internally connected and use common supply and return terminals, twelve connections are eliminated. These sav,ings are to be expected because the concept of multi-function semiconductor networks is simply a fuller realization of the basic integrated circuit concept, now made possible by significant advances in process control and design experien ce.

Dual Gate

Triple Gate

r.---,

Quad Gate

多功能网络对每电路功能成本的影响。该图显示，当采用分立元件形式时，一个门电路的用户成本（价值）基本保持不变（对于军用系统而言，每个组装门电路的典型值为 5 美元）。假设没有价格优惠，四个门电路的成本是单个门电路的四倍，即 20 美元。第二行则表明，制造一个包含四个门电路的网络，其成本仅比单门电路网络高出 20%。因此，在当今的大型军用系统（工作温度 -55 至 125°C）中，每个门电路的实际成本降至 3 美元。

Effect of multi-function networks on cost per circuit function. This chart shows that the user cost (value) of a gate is essentially constant when considered in a discrete component form ($5 per assembled gate is a typical value for military systems.) Assuming no price breaks, four gates cost four times as much, or $20. The second line shows that fabricating a 4-gate network costs only 20 percent more than a single-gate network. This results in an effective cost reduction to $3 per gate for large military systems (-55 to 125° C) today.

$3.00

$4.00

$5 .50

$3.00 $4.00 $5 .50

$10

$20

L..:

1.2

$15

1. l

L-

1.0

$10

L----J

相对网络

制造成本

每电路功能对用户的等效成本

Relative Network Manufacturing Cost Equivalent Cost per Circuit Function to User

L ___

r---,

r:---7

ptIT >l

=DfDt- D+- ii ~ ! =P+

D+- D+-

ptIT >l =DfDt- D+- ii ~ ! =P+ D+- D+-

Single Gate

用户价值

Value to User

网络套餐内容

Network Package Content

\ • l

•

(',

<::

> <::

t-J

,.l-

;!.~

. :s

t~ . :s

--:,

[ e""', # 3 >,ii.~ /\vj, \qeo'

[N~\.,)\''t;\ ~ vn,.),;t,.

集成电路价格趋势

INTEGRATED CIRCUIT PRICE TRENDS

0 1-

I-

=> u. I-

u=>

u=> u

e::::

e:::: e::::

a..

w a..

仅因制造成本降低（良率提升、工艺改进）带来的结果

DUE TO MFG. COST REDUCTIONS ONLY (IMPROVED YIELDS, PROCESS IMPROVEMENTS,

ETC.)

\ -------

由于多功能方法加上制造成本降低

DUE TO MULTI-FUNCTION APPROACH PLUS MFG. COST REDUCTIONS

TIME

当前集成电路价格趋势图，显示了多功能网络带来的价格阶梯式下降效应。对于任何半导体产品而言，当集成电路进入成本曲线的早期陡峭阶段之后，工艺成本的降低是逐步实现的。这种降低源于工艺控制、劳动效率以及机械化的逐步改进——所有这些都需要经验的逐步积累。多功能半导体网络所创造的单位电路功能成本阶梯式下降，使集成电路的价格区间目前已完全能与分立元件竞争，而这一价格区间若仅依靠直接的工艺成本降低，原本需要三到四年才能达到。当然，多功能网络也将继续受益于工艺成本的逐步改善，直到工艺技术推动曲线出现下一个台阶，如此循环往复。

Chart of current integrated-circuit price trends, showing downward step-function effect of multi-function networks. Process cost reductions for any semiconductor product come gradually when - as is true for integrated circuits - the early, steep portions of the cost curve have been passed. Such reductions result from improved process controls, improved labor efficiency, and mechanization

al I

of which require the gradual accumulation of experience. The downward step in cost per circuit function created by multi-function semi conductor networks brings integrated circuits into a price range now fully com petitive with discrete components, a price range which would have taken three or four years to reach through direct process cost reductions alone. Of course, multi-function networks will also benefit from gradually improving process costs until the time when process technology allows yet another step in the curve, and so on.

杰克·米勒

分机号 1206

Jack Miller Extension 1206

新闻稿第 108 号

发布时间：8 月 24 日

NEWS RELEASENR 108 FOR RELEASEAUGUST 24

I~ STRL

TEXAS

\I E~TS

INCORPORATED

BUILDING

INCORPORATED BUILDING

SEMICONDUCTOR

•

Tl ANNOUNCES

EXPRESSWAY

CENTRAL

NORTH

13500

TEXAS

DALLAS

DIVISION

SEMICONDUCTOR-COMPONENTS

新硅控整流器

NEW SI LICON CONTROLLED RECTIFIERS

所有平面结构 I 型，适用于高可靠性应用场景

WITH ALL-PLANAR CONSTRUCT I ON FOR HIGH RELIABILITYAPPLICATIONS

silicon controlled

全平面新型系列

new series of all-planar

洛杉矶，8 月 24 日

LOS ANGELES, August 24-A

rectifiers for

switching applications

今天在台上介绍我的是德州仪器。

was introduced here today by Texas Instruments

EIA 注册代码为 2N3555-3562。

EIA-registered as 2N3555-3562,

新的 PNPN 半导体额定值为一

the new PNPN semiconductors are rated at one

高可靠性公司。

high-reliability Incorporated.

电压范围为 30 至 200 伏，采用标准 JEDEC TO-5 封装。该系列采用 TI 的全平面工艺，通过氧化物钝化表面实现。

amp, 30 to 200 volts, and are packaged in the standard JEDEC TO-5 outline. The series features Tl's all-planar by an oxide passivated surface -

construction

其中每个连接点都受到保护

in which every junction is protected

不按常规路径提供。

not offered in conventional

an advantage

diffused,

SCR's.

全部采用离子扩散并部分平面化处理

al Icy-diffused and partially planarized

包含高导通增益（当 If = 1 安培时，I = 20 瓦特-秒和 200 瓦特-秒）；高浪涌电流能力（18 安培）；快速开关速度（tOFF = 3.5 微秒）；电特性

include high turn-on gain (I = 20 f-la and 200 f-la for gt If= 1 amp); high surge current capability (18 amps); fast switching speed (tOFF = 3.5 fJSec); Electrical characteristics

High leakage

且漏电流极低（在 25°C 额定电压下，If= 20 na，IR= 100 na）。

and very low leakage (If= 20 na, IR= 100 na at 25°C rated voltage).

在直流阻断条件下的稳定性有助于确保在高应力运行水平下的可靠性能。

应用

Nixie®

stab ii ity under d-c blocking conditions helps assure reliable performance under high-stress levels of operation. Applications Nixie®

shift registers,

包括雷管引信和保险线路，

include squib firing and fusing circuits,

驱动程序，直流脉冲扫描电路，

drivers, d-c pulse sweep circuits,

驾驶、脉搏发生器、

drivers, pulse generators,

时序与延迟电路，

timing and delay circuits,

ring counters,

电流传感、继电器

current sensing, relay

锤子和电系人字拖。

hammer drivers and power flip-flops.

Available through Tl sales offices and authcrized

series is priced as follows:

Available through Tl sales offices and authcrized series is priced as follows:

the 2N3555-3562

Tl distributors,

'gt = 20 f-la

100-999

lgt = 200 f-la

100-999

2N3555

2N3556

2N3557

2N3558

2N3555 2N3556 2N3557 2N3558

S4. 95

4.95

7.45

9.45

S4. 95 4.95 7.45 9.45

2N3559

2N3560

2N356 l

2N3562

2N3559 2N3560 2N356 l 2N3562

S3.83

4.10

5 .75

6.33

S3.83 4.10 5 .75 6.33

30 MAILING

30 MAILING

ADDRESS

POST

OFFICE

BOX

5012

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

新闻稿第 10 号

发布时间：1964 年 8 月 24 日

NEWS RELEASE NRl 10 FOR RELEASEAUGUST 24, 1964

杰克·米勒

分机号 1206

Jack Miller Extension 1206

INSTRUMENTS

TEXAS

INCORPORATED

•

INCORPORATED •

BU I LOI NG

$EM !CONDUCTOR

DIVISION

SEMICONDUCTOR-COMPONENTS

RECTIFIER

GLASS-ENCAPSULATED

新的 1 安培

NEW ONE-AMP

TEXAS

DALLAS.

•

EXPRESSWAY

CENTRAL

NORTH

13500

得州仪器（Texas Instruments）出品

可靠且经济实惠

INTRODUCED BY TEXAS INSTRUMENTS RELIABLEAND ECONOMICALLY

IS COMPACT,

glass-encapsulated

新的 1 安培

new one-amp

洛杉矶，8 月 24 日——

LOS AN GE LES, August 24 -A

硅整流器

si Iicon rectifier

advantages

据报道，德州仪器（Texas Instruments）提供的这一方案潜力巨大。

by Texas Instruments is said to offer significant

introduced

PRICED

over conventional

法蓝无以及环氧树脂类型。

flange less and epoxy types.

top-hat,

新的 Tl 整流器

The new Tl rectifiers

1 N4383-85

designated

提供高电流能力

密封

provide high current capabi Iity hermetically

（在 100°C 温度下持续 1 安培，浪涌 50 安培），采用圆柱形封装，峰值反向电压额定值最高可达 600 伏。

(1 amp continuous at 100°C, 50 amps surge) in a cylindrical, Peak reverse voltage ratings range up to 600 volts.

package.

这款新的装置尺寸仅为 0.150 英寸 ×

the new units measure only .150" x

applications,

非常适合太空领域的关键应用

Well suited for space-critical

高级帽子评级

rated top-hat

360 度，并且比同类绝缘产品小 80%。

. 360" and are up to 80% smaller than comparably insulated

sealed glass

package

(which eliminates

缺失

leads, and the absence of protruding

对绝缘材料的需求

the need for insulating

A fully

rectifiers.

袖管或垫圈）。

sleeves or washers),

法兰允许高密度

flanges permit high-density

packaging

weldable

for additional

节省空间，

兼具高可靠性与低成本。

space savings. combined with both high rel iabi Iity and low

由于这些规模优势，价格，

Because of these size advantages, price,

新的玻璃整流器

the new glass rectifier

applications

在消费品和工业领域得到广泛应用

to find wide usage in consumer and industrial

is expected

以及军事装备。

as well as military equipments.

The 1 N4383-85

通过 Tl 销售办事处和授权

through Tl sales offices and authorized

该系列已经上线。

series is available

以下价格：

at the fol lowing prices:

MAILING

ADDRESS.

POST

distributors

100-999

OFFICE

BOX

1N4383

$0.34

1N4384

0.41

1 N4385

0.54

30 - (Caption

30 - (Caption

Next)

5012

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

PHOTO CAPTION

GLASS ENCAPSULATION

PROVIDES POSITIVE

TI 的新款 1 安培产品采用了密封封装工艺。

HERMETIC SEAL FOR TI'S NEW ONE-AMP

SILICON

RECTIFIER

Positive protection

防潮性是 TI 新型玻璃封装的一个关键特性。

against moisture is a key feature of Tl's new glass-encapsulated

silicon rectifiers.

Significantly

rectifiers,

比传统的小

smaller than conventional

top-hat,

新款的 1N4383-85 型号非常适合高密度应用。

the new 1N4383-85 units are wel I suited for high-density

one-amp

无法兰和环氧树脂封装。

flangeless and epoxy packaging.

They require

没有绝缘套管或垫圈，也没有凸起的法兰来防止近距离安装。

no insulating sleeves or washers and have no protruding flanges to prevent close-proximity mounting.

这两种铅材料均可焊接。

Both leads are weldable.

电压额定值最高可达 600 伏。

Voltage ratings range up to 600 volts.

[eV\c..'# 2

2-1--1Av~y\tiGt..t, "->C~

P,<2.,r'nl)'\o.(.,ll. (;,, c,< ij

luv'\e.--Av"'pC::,\.t.,.-,«;.- f;:th"fh..1 \ ..,·te:~ (<e.e,_kJ'i'er,;

luv'\e.--Av"'pC::,\.t.,.-,«;.- f;:th"fh..1 \ ..,·te:~ (<e.e,_kJ'i'er,; J

新闻稿

编号：NR101

发布日期：1964 年 8 月 24 日

NEWS RELEASENRl0l FOR RELEASEAU GUST 24, 1964

杰克·米勒

分机号 1206

Jack Miller Extension 1206

TEXAS

INSTRUMENTS

INCORPORATED

SEMICONDUCTOR

INCORPORATED SEMICONDUCTOR

BUILDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

PLANAR DIODES ANNOUNCED

洛杉矶，8 月 24 日 ——已有三个被公布

LOS ANGELES, August 24 -Three have been announced

switching

DALLAS.

TEXAS

BY Tl

平面结构二极管的类型

types of diodes using planar construction

由德州仪器（Texas Instruments）制造。

by Texas Instruments.

平面高电导率

planar high-conductance

•

DIVISION

Tl 公司目前已有可用资金。

Tl now has available

diodes,

techniques

平面稳压二极管，

planar zener diodes,

并且平面通用

and planar general-purpose

diodes.

Including

both established

TL 的新型平面产品线提供统一的参数，涵盖各种类型和新型单元。

types and new types of units, Tl's new planar lines offer uniform parameters

而其内在的

and the inherent

reliability

以及这种建筑类型的坚固耐用性。

and ruggedness of this type of construction.

平面通用型（包括

The planar general-purpose (including

A and B types),

类型包括 JAN l N645，

types include the JAN l N645,

l N456 through l N459A,

the "Moly/G

,.®diode package,

temperatures,

and outstanding

performance,

improved voltage

characteristics

with Iife.

regulation

planar switching

和高击穿电压。

and high breakdown voltage.

sales office,

or directly

另外打包的还有设计师

Also packaged designer

在低齐纳电压下

at low zener voltage

与稳定的逆向

and stable reverse

diodes announced

levels,

low-noise

根据您提供的英文片段“by Tl are new devices designated”，这看起来不是一个完整的句子，且“Tl”可能是笔误或缩写。但按照您的要求，我将严格按照原文逐段翻译，不添加解释，不改变结构。由于该片段不符合中文语法且不完整，我将保留其英文形式或尝试按字面直译，以忠实于原文：

由 Tl 指定的新设备

by Tl are new devices designated

它们兼具极致的稳定性与高品质的

They offer extreme stabi Iity, high con

它们随时可得。

They are available

在“统一/集团”中

in the "Uni/G"*

关于新型 TI 平面二极管的详细信息现已提供。

on the new Tl planar diodes is available

来自半导体元件行业

from the Semiconductor-Componenets

diode package.

from your Tl field

德州仪器的一个部门

division of Texas Instruments,

Dallas.

30 -

Dallas.

30 -

Trademark,

MAILING

Trademark, MAILING

ADDRESS

德克萨斯仪器公司

POST

Texas Instruments Incorporated POST

OFFICE

BOX

501 2

•

in the

这些二极管为电路提供

these diodes give the circuit

TIDl l、TID12、TIDl 3、TIDl 4、TIDl 5 和 Tl Dl 6。

TlDl l, TID12, TIDl 3, TIDl 4, TIDl 5, and Tl Dl 6.

information

当前处于高位的水流

currents at elevated

上述债券为 N962B 至 N973B。

are the l N962B through l N973B.

,.®diode package,

"Moly/G

Additional

Packaged

stabi Iity.

time-proven

ductance

以及 l N464 系列。

and the l N464 series.

这些二极管具有低漏电特性。

these diodes offer low leakage

可用的平面齐纳管类型

Planar zener types available

High-conductance

l N482 through l N486

DALLAS.

TEXAS

75222

•

ADAMS

5-311

•

CABLE

TEXI NS

新产品

新闻稿

立即发布

NEW PRODUCT NEWS RELEASE FOR IMMEDIATE RELEASE

Jack Briner,

8/24/64.

Jack Briner, 8/24/64.

Ext.

10. 德州仪器公司

TEXAS INSTRUMENTS INCORPORATED 3609

BUFFALO

SPEEDWAY

•

APPARATUS

HOUSTON,

TI INTRODUCES

PRECISION

TEXAS,

24,

Group

我将会展示。

wi.ll show

Show

在纽约，

in New York,

August

their

preci. sion

transducers

barometers,

air

speed

Two models

are

available

requiring

bottle

requiring bottle

with

The

user

recording

gage

recording gage

Products

Calibration

System

在伊斯卡（ISCAR）

at the ISA

sensitive

i.s calibration

device

- a table

- a table

vacuum

a built-in

uni.t operating

on plant

- a console

- a console

operating

Both

have

source,

vacuum

source.

ab solute.

units

In operation,

the

or bottle

ranges

system

control

of pressure.

can measure

pres

sure

在任何一种情况下。

in any of three

modes

- external

- external

of pres

over

small

manua1

nulling

servo

gage

ranges

usi.ng

measurement

with

manual

nulling

measurement

of pressure

with

servo

nulling.

allows

setting

of pressure

points

and returning

与

wi.th the

to a beginning

The

pressure

servo

gage

pressure

two main

allows

- manual

allows

- manual

allows

automatic

control

mode

tracking

point

and

from

has

and precise

sure

air

on plant

measurement

and holding,

- altimeters,

- altimeters,

precise

rapid

ISA

Industrial

application

allows

point

indicators.

1 到 100 英寸汞柱函数

1 to 100 i.nche s of mercury functions

sure

SYSTEM

Instruments

sure

Prime

以及任何先前的

and any pres

an external air

PRESSURE

Pres

12-15.

TEXAS

DIVISION

1964 - Texas

new Precision

October

HOUSTON,

each

to check

repeatability.

-more-

repeatability. -more-

MAILING

ADDRESS

POST

OFFICE

BOX

66027

•

HOUSTON,

TEXAS

77006

•

JACKSON

6-1411

•

CABLE

TEXINS

358

第二页

精密

TI 在 ISA 展会上推出

系统

Page Two Precision TI Introduces at ISA System

The

50 lb.

The

50 lb. The

system

portable

120 lb.

Products

model

12 i.n. hi.gh,

measures

$4450.

Group,

deli.very

hi.gh,

00,

deli.very

120 days,

O. Box 66027,

Manager,

Houston,

Manager, Houston,

Texas

plant.

FOB

24 i.n. deep,

FOB plant.

Texas

weighs

18 i.n. deep,

120 days,

22 i.n. wi.de,

50 in.

the Marketing

wri.te

00,

18 i.n. wi.de,

measures

is $6500.

Pri.ce

i.nformati.on,

sure

i.s approximately

Pri.ce

console

Pres

Instruments,

For

weighs

Industrial

more Industrial

77006.

-30-

…

...

新闻稿第 116 号

发布日期：8 月 24 日

NEWS RELEASE NR 116 FOR RELEASE AUGUST 24,

唐·沙林豪森（Don Scharringhausen）

分机号 593

Don Scharringhausen Extension 593

1964

TEXAS

INSTRUMENTS

INCORPORATED

INSTRUMENTS INCORPORATED

SEMICONDUCTOR

BUILDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

•

DALLAS

TEXAS

DIVISION

钛耐火接触系统消除紫斑

Tl REFRACTORY CONTACT SYSTEM ELIMINATES PURPLE PLAGUE

LOS ANGELES,

August 24 -

interface

in semiconductors

producing

compound called

Laboratories,

interfaces

Laboratories, interfaces

purple plague''

division

failure

was announced

由得州仪器

by Texas Instruments

在西部电子展上

at the Western Electronics

展览与年会

Show and Convention

said,

director

'purple

Tl 半导体业务

of Tl's Semiconductor

plague'

并且结果体现在机械性方面。

and results in mechanical

degradation

更高的储存温度

Higher storage temperatures

尽管在不久的将来

"Although in the near future,

metal structure,

recognized

现在，曾经不可能的已经变得可行。

possibie are now practical

随着时间和温度的变化

with time and temperature

development,

随时间推移

with time and

it is planned

with

. 11

for production

devices

Petritz said.

新的 Tl 耐火材料

一种层状结构

The new Tl refractory a layered

关于债券联系（bonded contacts）

of the bonded contacts

超过目前已有的。

than are currently

它仍然是个实验室

sti II a laboratory 11

研发与开发

Research and Development

存在于所有铝转金过程中的化合物

is a compound that exists in all aluminum-to-gold

新系统不会老化，因此不会变质。

the new system since it will not deteriorate

铝金

of aluminum-gold

here today.

Dr. R. L. Petritz,

heat.

elimination

长期被认为是铝金合金的来源

long known to be the source of an aluminum-gold

半导体组件

Semi conductor-Components opening

一个完整的系统

A system for complete

contact

系统由一种独特的技术组成。

system consists of a unique technique

最后一个是黄金。

the last of which is gold.

在行业中最为可靠

in the industry as the most reliable

这完全属于金生金式的操作。

This allows gold-to-gold completely

黄金与铝的化合物，

compound of aluminum and gold,

"purple

plague."

基于这种接触

As a result of this contact

system,

两大可靠因素

two major reliability

devices

此外，这些问题也已得到解决。

have been solved in addition

failures

因腐蚀造成的

caused by corrosion

关于废除

to the elimination

of aluminum

of applying

eliminating

粘结材料

易碎物质

bonding the friable

半导体行业的问题

problems in semiconductor

紫色的瘟疫”。

of 11purple plague."

线索已经被清除了，

leads have been eliminated,

Early

不过，这家公司的盈利一向微薄。

as have thin

(more)

MAILING

(more) MAILING

ADDRESS

POST

OFFICE

BOX

5012

•

DALLAS,

TEXAS

75222

•

ADAMS

5-3 l l 1

•

CABLE

TEX INS

第二页

Tl 耐火接触系统消除紫斑

Page two Tl Refractory Contact System Eliminates Purple Plague

由于搬运过程中摩擦导致的铅芯区域磨损。

铅芯的这一部分，

regions in leads caused by abrasion in hand Iing. that portion of the lead,

薄弱区域会导致过度应力集中。

Thin regions result in overstressing

causing burnout.

新工艺包括真空沉积技术。

The new process includes vacuum deposition

of a refractory

silicon slice,

随后采用真空蒸镀工艺。

followed by vacuum deposition

conductivity.

厚度大于 100 微英寸

Thicknesses greater than 100 microinches

Several beneficial

alloy after deposition,

Several beneficial alloy after deposition,

副产品的退化

by-products degradation

“瘟疫”一词被否决了。

plague" was rejected

cleaning

reduction

在领先的截面中。

in the lead cross section.

此外，

The chisel-bond In addition,

要克服“紫色凿子键的强度”。

to overcome "purple strength of the chisel-bond

这一过程导致了规模的严重收缩。

process results in a serious size

铝必须在非常柔软的状态下才能进行粘合。

aluminum must be very soft in order to bonding.

system necessitates

在铅上着陆了一条铝。

of an aluminum land on the lead.

a package modification

在玻璃密封操作过程中，

During the glass sealing operation,

合金会形成金属间化合物。

alloys form intermetallic

这块地下含有钴，引发了争议。

cobalt under this land, causing questionable

device after

这反应性极强。

which is quite reactive.

此外，冶金所需的那 80% 都会使其变形。

deform it the 80% that is required for metalurgical Moreover, the all-aluminum

The chemical

未封装的

of the unencapsulated

由于机械性能较差

by Tl because of the inferior mechanical

用于粘合铝线。

for bonding aluminum wire.

关于玻璃密封业务

of the glass-sealing

由于没有后缀

Because there is no post

现在某些厂商采用的系统

system now used by some manufacturers

necessary

对于电力行业来说，这是非常渴望的。

desired for electrical

这些成就已经实现。

have been achieved.

承运商寿命的限制被消除了。

of carrier lifetime is eliminated.

这在铝业上是做不到的。

this is impossible with aluminum,

全铝

The all-aluminum

金属变为整洁的表面。

metal onto the clean

任何数量的黄金

of gold in any quantity

这一制度带来的结果。

result from this system.

系统的惰性也允许化学制造；

inertness of the system also allows chemical fabrication;

alloying

铝铁化合物

compounds of aluminum-iron

consisting

constituents

consisting constituents

and aluminum

reliability.

此外，必须在铝制系统上镀金。

Also, gold plating must be applied to the aluminum-system

包装装好之后，

package after assembly,

这样一来，焊到电路板上就方便了。

to allow soldering it into the circuit.

镀金工艺可能会降低金属与玻璃之间的结合强度。

The gold plating process can degrade the metal-glass

密封件，并可能引发电解液问题。

seal, and can give rise to electrolyte

contamination

包装盒的外部。

of the outside of the package.

目前在这一阶段所做的工作还不足以

镀盐并确保可靠性

迄今为止，

新的耐火材料

done at this stage of the process cannot be fired at a sufficiently plating salts and give reliable To date, new refractory

to eliminate

solderabil ity.

德州仪器已经积累了联系人系统。

Texas Instruments has accumulated contact system.

high temperature

Plating

300,000

数小时的测试信息

hours of test information

测试中没有出现任何失败情况。

No failures have resulted from the tests.

30 -

30 -

on the

新闻稿第 06 号

1964 年 8 月 24 日发布

NEWS RELEASE NRl 06 FOR RELEASE AUGUST 24, 1964

杰克·米勒

分机号 1206

Jack Miller Extension 1206

TEXAS

仪器公司

INS~fRUMENTS INCORPORATED

SEMICONDUCTOR

BUILDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

NEW 110-AMP,

DALLAS.

TEXAS

DIVISION

1200 伏硅控整流器

1200-VOLT SI LICON CONTROLLED RECTIFIERS

由德州仪器公司（Texas Instruments）引介

INTRODUCED BY TEXAS INSTRUMENTS

LOS ANGELES,

August 24 -Texas

一系列高能量

series of high-power

Instruments 今日宣布

Instruments today announced

硅控整流器

si Iicon control led rectifiers

capable

一个全新的五设备

a new five-device

of hand Iing 110 amps rms and

额定电压在 400 到 1200 伏特之间。

这种新型可控硅整流器，型号定为

rated from 400 to 1200 volts. The new SCR's, designated

TIC0l 与 TIC05 将应用于此类领域。

TIC0l - TIC05, will find use in such applications

大型交流和直流变速电源。

large a-c and d-c variable-speed power supplies.

motor controls,

high-power

它们也将作为替代人手。

They will also serve as replacements

高 di/dt 和 dv/dt 额定值、

电流容量

High di/dt and dv/dt ratings, current capability

controlled

逆变器与大电流

inverters and high-current

用于引燃管和闸流管。

for ignitrons and thyratrons.

avalanche

以及低栅极电流要求

and low gate current requirements

characteristics,

1000-amp surge

是重要的经营

are important operating

advantages

引用于 TL。环形浇口装置的使用特性

cited by Tl. The use of ring-gate device characteristic

firing construction

reduces,

or eliminates

circuitry.

线路瞬变导致的误点火

False firing due to line transients

200 v/µsec,

a characteristic

设备。

of the device. allowing

结果为 50 安培/微秒的 di/dt。

results in a di/dt of 50 amps/µsec. entirely,

对当前限制的需求

the need for current-I imiting

is precluded

通过高最小 dv/dt

by a high minimum dv/dt of

这也使得完全切换成为可能。

which also makes it possible to use the ful I switching

新的 SCR 1s 型号还提供了批量控制功能。

The new SCR 1s also offer bulk controlled

使他们能够承受

them to withstand

This

反向功率瞬变

reverse power transients

avalanche

speed

characteristics,

高达 10 千瓦也不会损坏。

as high as 10 kw without damage.

1000 安培的电流可用最大 125 毫安的栅极电流进行控制。

One thousand amps may be control led with a maximum gate current of 125 milliamps. greatly

这种高功率增益意味着更小的

This high power gain means smaller,

simpler,

more reliable

controls with

降低了对电力的需求。

新的 TI 器件采用了冷焊工艺。

reduced power requirements. The new Tl devices feature a cold-weld

contacts.

两者都被描述为

Both are described

hermetic

财务实力同样重要

as important reliability

密封和高温

seal and high-temperature

advances

在高功率下

in high-power

al lay

SCR

more MAILING

more MAILING

ADDRESS

POST

OFFICE

BOX

5012

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

第二页

新型 11 0A，1200V 硅控整流器

Page Two New 11 0A, 1200V Si Iicon Control led Rectifier

construction.

新联系人

The new contact

techniques

骑行并提供更高的可靠性。

cycling and provide added reliability Detailed

information

销售办事处和授权

sales offices and authorized

drastically

increase

resistance

to thermal

在高温条件下。

at high temperatures.

on specifications,

价格与交付

price and delivery

is available

through Tl

distributors.

CAPTION

新高能级

NEW HIGH-POWER

这种新的强大处理能力

This new high-power of handling

silicon controlled

SCR ANNOUNCED

rectifier

110 安培（有效值），且可供应。

110 amps rms and is available

developed

高功率增益也相当可观。

high power gain are other significant

operating

密封包装与高温

hermetic seal and high-temperature

alloy contacts

TICO1 到 TICO5。

TIC0l through TIC05.

来自德仪（Texas Instruments）的产品具备此能力。

by Texas Instruments is capable

在 400 伏到 1200 伏的额定电压范围内。

in ratings from 400 to 1200 volts.

50 安培/1-1 秒，最小 dv/dt 为 200 伏/1-1 秒，受控的

50 amps/1-1sec, minimum dv/dt of 200 v/1-1sec, controlled

designated

BY Tl

avalanche

advantages.

高 di/dt 值

High di/dt of

characteristics,

and

该封装采用冷焊工艺。

Package features a cold-weld

出于高可靠性的考虑。

for high reliabi Iity.

新的业务板块是

The new units are

~ell'\, I,

[IZ..00

~ell'\, I, [IZ..00

:2-l--\

J\\J~ lt\b1..l,"le..e. p,((, f~-t~

:2-l--\ J\\J~ lt\b1..l,"le..e. p,((, f~-t~

-\fo\\

•W"' Gl\hol\eJ

KeL\

.L,(\

(o,

{:7,cr<_.

o,, 0 -)

新闻稿编号 115

发布日期 8 月 24 日

NEWS RELEASE NR 115 FOR RELEASE AUGUST 24

杰克·米勒

分机 1206

Jack Miller Extension 1206

INSTRUMENTS

TEXAS

INCORPORATED

SEMICONDUCTOR

INCORPORATED SEMICONDUCTOR

•

BUILDING

NORTH

13500

DIFFERENTIAL AMPLIFIERS

INTEGRATED-CIRCUIT

August 24 -

purpose applications

SN523A 和 SN524A，

the SN523A and SN524A,

Designated

基于达拉斯的管理者

manager of the Dal las-based

company's

Integrated

网络*。

都是建

networks*. are built in

NPN 和 PNP 晶体管

NPN and PNP transistors

and

vice president

Circuits department,

从同一块 Master SI 冰晶片上沉积而成。

from the same Master SI ice wafer; only the deposited

fabricated

amplifiers

霍华德·莫斯（Howard Moss），TL 助理说道。

said Howard Moss, Tl assistant

新的网络，

The new networks,

同样的结构。

the same structure.

Incorporated

semiconductor

这两个新的低层级

完全隔离

the two new low-level with fully isolated

硅锭

bars of silicon,

within monolithic

entirely

pattern

在德州仪器，威斯康（WESCO）的……

at WESCON by Texas Instruments

公司的 52 系列线性 SOLID CIRCUIT® 产品线

to the firm's Series 52 line of linear SOLID CIRCUIT®

additions

general

amp Iifiers for general

differential

两个表现优异

Two high-performance

were announced

TEXAS

DALLAS.

DIVISION

TWO SERIES 52

Tl ANNOUNCES

LOS ANGELES,

•

EXPRESSWAY

CENTRAL

SEMICONDUCTOR-COMPONENTS

are

interconnection

internal

改变了。

这两个新网络已投入运营。

is changed . The two new networks are operational

-55 to 125°C,

temperature

另外，最初公布的两只 52 系列产品也一样。

Also, two other Series 52 units first announced

Moss said.

S N521A and S N522A -

1962 -

在整个军事行动期间

over the full military

in December

向全体指战员致敬

to the ful I mi I itary

ranges extended

现在温度上来了。

now have temperature

range of

requirements.

新的 S N523A 网络具有较低的输出特性，

requirements. The new S N523A network features fol lower outputs,

providing

design flexibility.

considerable

网络中的输入端发射器，

network in the emitters of the input stage,

a resistance

输入与差异

inputs and differential

both differential

emitter

扩音器的设计

The amp Iifier is designed

with

收益需进行调整

gain to be adjusted

over a

allowing

只需通过短路不同的引线组合，就能获得宽范围（40 至 70 dB）的增益。SN524A 包含一个达林顿管。

wide range (40 to 70 db) simply by shorting various lead combinations. The SN524A inciudes a Darlington

high typical

这个输入方式非常特殊。

input which gives an unusually

(more)

Patented

(more)

Patented

by Tl

MAILING

ADDRESS

POST

OFFICE

BOX

5012

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE·

TEXINS

input

第二页

52 系列集成电路

Page two Series 52 Integrated-circuit

Differential

阻抗为 5 兆欧。

impedance of five megohms.

另一个特点是其较大的动态输出范围，

Another feature is the large dynamic output range,

15 伏峰峰值，

15 volts peak-to-peak,

Amplifiers

single-ended.

对于这两个业务板块来说，通常

for both units is typically

电压增益是一个典型指标

Voltage gain is a typical

60 db.

typically

Frequency response

de to 150 kc；两者均使用 ±12 伏电源供电。

de to 150 kc; both operate from± 12-volt power supplies.

Series 52 Master Slice 条状芯片包含两个 PNP 与五个 NPN 晶体管。

The Series 52 Master Slice bar contains two PNP and five NPN transistors,

with each

在某些需要的情况下，晶体管也可作为二极管使用。

transistor usable as a diode if desired.

电路棒内还包含六个抽头电阻器。

The circuit bars also contain six tapped resistors

阻值范围为 400 欧姆到 50,000 欧姆。

with values from 400 to 50,000 ohms.

由于扩散技术

Since the diffusion techniques

simultaneously

在一块单一的硅材料中，

in the single block of silicon material,

经济上紧密匹配。

closely matched. economically

Additional

semi-custom

小批量购买的价格

以及 SN522A -

Price for small quantities and SN522A -

is $37 .50.

晶体管的特性

the transistor characteristics

circuit variations

仅仅通过改变存款

just by changing the deposited

创造所有的晶体管

create all transistors are

可以迅速获得。

can be obtained quickly and

interconnection

酒吧里的那些图案。

patterns on the bar.

(25 to 249) of the SN523A -

以及早前的 SN521A 也是如此。

and also for the earlier SN521A

SN524A 的批量定价为 32.50 美元。

The SN524A is priced at $32 .50 in the same quantity

range.

30 -

30 -

PHOTO CAPTION

得克萨斯仪器公司的新款 SN523A 芯片，CIRCUIT®

Texas Instruments new SN523A, CIRCUIT®

semiconductor

其中一个新设立的低层职位

one of two new low-level

network line.

放大器添加到了 SOLID-

amplifiers added to the SOLID-

[e.V\l--\,

J -5ec.. P,(2,PV\::rl,-..Co l. ~o, o, ,~

V·! A'-''J.\Ctt::,1.-\

1 J -5ec.. P,(2,PV\::rl,-..Co l. ~o, o, ,~ V·! A'-''J.\Ctt::,1.-\

[ ""::.e(,¢.'?

e…J-,;.,tviT,,

j',

SZ.. ---J:_..,,-1-~

e...J-,;.,tviT,, j', SZ.. ---J:_..,,-1-~

新闻稿编号 105

于 8 月 24 日发布

NEWS RELEASE NR 105 FOR RELEASE AUGUST 24,

杰克·米勒

转 1206

Jack Miller Extension 1206

1964

TEXAS

INs-rRUMENTS

INCORPORATED

INs-rRUMENTS INCORPORATED

SEMICONDUCTOR

BUILDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

SILICON

晶体管表面反转

TRANSISTOR SURFACE INVERSION

LOS ANGELES,

August 24 -

silicon

was announced

transistors

Electrode"*,

inversion

Electrode"*, inversion

A new approach

新手法

the new technique

在晶体管领域。

in the transistor.

没有阻止

did not prevent

DALLAS.

因 T1 开发而被淘汰

ELIMINATED BY Tl DEVELOPMENT

针对消除

to the elimination

of surface

inversion

Called

the "Field

Relief

今天由德州仪器（Texas Instruments）提供。

消除

here today by Texas Instruments. eliminates

TEXAS

the electrical

导致这一局面的原因之一

field that is one of the causes of

早期的努力仅仅是限制。

Earlier efforts only restricted

倒挂趋势的加剧，

the growth of the inversion,

目前正被用于生产中

is now being used in the production

是一个 PNP 硅晶体管。

is a PNP silicon

for complementary

switch,

没有反三角贸易的

of an inversion-free

用于极高速度的场合

used for very-high-speed

T1 单元的保证金额很低

The Tl unit has low guaranteed

circuitry.

切换

VcE(sat)

switching VcE(sat)

2N2894.

applications

最多 10 毫安。

maximum at 10 ma).

由于场缓解电极，

Because of the Field Relief Electrode,

subjecting

temperature

condition

在 TI 设备中。

in the Tl devices.

back-bias

节目现已开始。

program is now underway

leakage

to incorporate

inversion,

currents

不产生

does not produce

especially

将“FRE”融入其他硅材料中

the "FRE" into other silicon

troublesome

当这些业务单元投入运营时

when the units are operated

超过三年来，

For more than three years,

inversion

在有偏倚的背景下

in a back-bias

condition

recently

several

other manufacturers

have announced

sidered

recision

diffusion

solution

an ultimate

一段时间以来，我们一直在研究各种方法。

way for some time on approaches

Patent applied

Patent applied

to inhibit

目标在于消除

aimed at el iminotion

types,

在 T1 线路中，

导致高水平。

in the Tl lines. causes high

在高温条件下。

at high temperatures. surface

similar approaches.

对于这个问题，

to the problem,

An extensive

transistors

PNP transistor

diffusion"

time (80 nsec

这些单位变成了一个高度

the units to a high

in silicon

Tl 已经使用了“溯及”这一概念。

Tl has used "recision

inversion,

并且这些计划一直处于……

and programs have been under

这一现象……

of the phenomenon ..

for

ADDRESS

POST

OFFICE

BOX

5012

•

DALLAS.

TEXAS

75222

•

and

它从未包含

Tl has never con

more -

more -

MAILING

and

(0.5 v maximum at

100 ma)、高 fr（10 伏、10 毫安下最小 400 兆赫）、低总开关损耗。

100 ma), high fr (400 Mc minimum at 10 v, 10 ma), and low total switching

Surface

but

it.

技术

2N2894

The technique The 2N2894

•

DIVISION

ADAMS

5-3111

•

CABLE

TEXINS

场发电极

第 2 页

消退扩散及类似技术

Field Relief Electrode Page 2 Recision diffusion and similar techniques

旨在限制

were aimed at restricting

the spread of the

通过使用与集电区同类型的重扩散层来实现反型。

inversion by means of a heavily diffused layer of the same type as the collector.

This tech

限制几何图形的尺寸，

limiting the size of the geometry,

and hence

使用扩大化的

the use of expanded

独特的做法阻止了频率

nique prevented the frequency

capability

contacts,

提尔的电场缓解电极

Tl's Field Relief Electrode

以及这些设备的切换速度。

and switching speed of the units.

neutralizes

而不是限制这种反转现象，

rather than restricts the inversion phenomenon,

contacts.

因此，有两个优势

Thus, two advantages

expanded

contacts

result:

允许小几何体，

permit smal I geometry,

higher frequency

同时也使得使用更多类型的设备成为可能

and also al lows the use of expanded devices are possible because

而反转也被抑制了。

and inversion is suppressed.

尽管目前对地面逆温的所有成因尚未完全了解，但田间活动确实会引发逆温。

Though all of the causes of surface inversion are not fully understood at this time, field produces inversion.

已知表面电学

电极

is known that a surface electrical Electrode

随着屏蔽层接地到器件集电极，氧化层表面将终止电极。

with the shield grounded to the device collector. surface of the oxide wil I terminate the electrode

Any appreciable

在电极处。

at the electrode.

以及氧化物半导体

and the oxide-semiconductor

interface,

田间救济

of the Field Relief

Incorporation

对晶体管的投入，可以比作增加了内部

into the transistor can be compared to adding an internal

将晶体管“包裹”起来，这一领域由此开启。

"shield" to the transistor, field beginning

Little field wi 11 be evident because the electrode.

Little field wi 11 be evident because the electrode

at the

between

is grounded to

收藏者。

无税收倒置附加条款

the collector. Additional inversion-free

information

关于带有场泄电极的 2N2894 型晶体管，

on the 2N2894 with Field Relief Electrode,

硅晶体管也是如此，

si Iicon transistors,

半导体零部件

the Semiconductor-Components

可从得州仪器（Texas Instruments）的现场销售办事处获取。

is avai Iable from Tl field sales offices, division of Texas Instruments,

30 -

30 -

Dal las.

以及在其他的方面，或直接地。

and on other or directly

from

CUTLINE

硅晶体管表面反转

SILICON TRANSISTOR SURFACE INVERSION

这是一位艺术家的

This is an artist's

rendering

在典型横截面中

of the cross section of a typical

带着“战场救援电极”*。

with the "Field Relief Electrode"*.

FRE（股东公允价值收益），是经过

The FRE, developed

屏蔽以消除

shield to eliminate

地表电力

the surface electrical

导致倒置的原因

cause of inversion

in silicon

Patent Applied

For

transistors.

charge.

ELIMINATED

PNP transistor

structure

德州仪器

by Texas Instruments,

This eliminates

the electrical

protected

起着护城河的作用。

acts as a field,

Lc.V\c.J,

Z) '2-"\ Av-~, \~(;/·l, ~ (IIZ

Lc.V\c.J,

Z) '2-"\ Av-~, \~(;/·l, ~ (IIZ

0 ( 0 \\,

"()h.,-\

C°o_'

0 ( 0 \\, "()h.,-\ C°o_'

or i "},

新闻发布稿第 112 号

于 8 月 24 日发布

NEWS RELEASE NR 112 FOR RELEASE AUGUST 24

杰克·米勒

1206 分机

Jack Miller Extension 1206

INS"fRUMENTS

TEXAS

INCORPORATED

•

INCORPORATED •

BUILDING

SEMICONDUCTOR

switches

(GCS) capable

德克萨斯仪器公司

by Texas Instruments

of switching

gate control led

silicon

high-speed

here today

was unveiled

输出最多 750 瓦特，持续 3 微秒

up to 750 watts in 3 microseconds

devices

specifically

are characterized

applications

for industrial

栅控开关。

gate control led switch.

来自德州仪器电视水平扫描控制芯片相同的制造工艺。

out of the same process used for Tl's TV horizontal-sweep-control

第一块大屏幕

first large-screen

近期的这一变化使得该行业的（发展）成为可能。

which recent Iy made possible the industry's

固态

sol id-state

receiver.

television

新的工业类

The new industrial

and electronic

flip-flops,

GCS 将被广泛应用于多种场景。

GCS wil I find use in a variety

power inverters

applications,

开关模式

点火

switching-mode ignition

SWITCH

Incorporated.

新的 TIC] l-TIC15

The new TIC] l-TIC15

这一发展情况如何

was this development

TEXAS

德克萨斯仪器公司

BY TEXAS INSTRUMENTS

ANNOUNCED

一套全新的大功率，

A new series of high-power,

August 24 -

LOS ANGELES,

GATE CONTROLLED

HIGH-SPEED

工业应用领域

FOR INDUSTRIAL APPLICATIONS

DALLAS,

DIVISION

SEMICONDUCTOR-COMPONENTS

新高功率、

NEW HIGH-POWER,

•

EXPRESSWAY

CENTRAL

NORTH

13500

high-speed

and converters,

电源和调节器，

power supplies and regulators,

d-c switching

继电器和锤钻

relay and hammer drivers,

其他应用领域则是在高功率场景中。

Other uses are in high-power

breakers.

circuit

高频交易

of high-frequency

ballast

flourescent

power

脉冲调制器，

以及汽车

pulse modulators, and auto

replacement

systems.

特性是必需的

Characteristics is required

important

对此类投资。

to such applications

断开 100 伏电压下 5 安培的电流。

to turn off 5 amps at 100 volts),

power switching

这里我正处于高潮期

are high current turn-off

high voltage

capability

（功率从 750 瓦到 7.5 安培不等）, 以及快速切换

(750 watts up to 7 .5 amps), and fast switching

使用这些单位替代传统的对应单位

The use of these units in place of conventional with corresponding

improvement,

成本和可靠性

cost and reliability

只获得 200 匹马。

gain (only 200 ma

(100 to 500 volts),

speed (typically

61-1sec).

SCR 能够实现简化的

SCR's can result in simplified reduced

(more)

ADDRESS

POST

OFFICE

BOX

5012

•

DALLAS,

TEXAS

75222

•

AD~Ms

5-3111

circuitry

规模越大，回报越低。

size and lower drive

capacitor

power requirements.

MAILING

high

•

CABLE

TEX INS

第 2 页

新型高性能，

Page two New High-power,

High-speed

同时也促进了行业首创。

Also contributing industry first. dissipation

门控开关

Gate Control led Switch

to reliable

performance

新设计采用了全铜材质。

The new design features an all-copper

为了实现更凉爽的运行

for cooler operation

在电路板中

in circuit-board

新的 Tl Cl l-TIC15 门控受控并已授权

The new Tl Cl l-TIC15 gate controlled and authorized

Tl 的新 TO-3 冷焊工艺

is Tl's new TO-3 cold-weld

distributors

package

头部的改进能够提升自由空气流通效果

header and can which improve free-air

applications.

开关是可以买到的

switches are available

价格区间为 5.40 美元至 13.35 美元

at prices ranging from $5.40 to $13.35

通过特灵销售办公室进行批量销售

through Tl sales offices in quantities

of 100 to 999.

30 -

30 -

PHOTO CAPTION

新型工业门控开关发布

NEW INDUSTRIAL GATE CONTROLLED SWITCH ANNOUNCED

德仪

BY TEXAS INSTRUMENTS

能够以 3 微秒的速度切换高达 750 瓦特的功率，

Capable of switching up to 750 watts in 3 microseconds,

得克萨斯仪器公司的新型硅栅

Texas Instruments new silicon gate

控制型开关专为多种高频应用而设计。

control led switch is designed for a wide range of high-frequency, applications.

d-c switching

新的 Tl Cl l-TIC15 设备与 TI 的 GCS 产品类似，适用于水平应用场景。

The new Tl Cl l-TIC15 devices are similar to Tl's GCS for horizontal

行业首款大屏

TO-3 的控制

control in industry's first large-screen TO-3.

high-power

solid-state

TV receiver.

sweep

包裹是 Tl 公司的新型冷焊产品。

Package is Tl's new cold-weld

[e.1 \ 1!l f.\\J:l,\ti.£.:,L--1}

'Jee_ e1i,ehdo,lcll

LGi:---\e.Cov\--\1 o\\a~ ~wi\c.

[e.1 \ 1!l f.\\J:l,\ti.£.:,L--1} 'Jee_ e1i,ehdo,lcll LGi:---\e.Cov\--\1 o\\a~ ~wi\c.

0 .~-,

L--,..L--,..L--

…L.__J …L.__j

...L.__J ...L.__j

llu -ANOOf SUPPLYY0t.T"(".(-Vol!J

fo(

0C1J

新闻稿 NR107

发布日期 1964 年 8 月 24 日

NEWS RELEASENR107 FOR RELEASEAUGUST 24, 1964

TEXAS

杰克·米勒

分机号 1206

Jack Miller Extension 1206

INSTRUMENTS

INCORPORATED

INSTRUMENTS INCORPORATED

SEMICONDUCTOR

BUILDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

德州仪器发布公告

TEXAS INSTRUMENTS ANNOUNCES

capability

TEXAS

典型的复苏周期

TYPICAL RECOVERY TIME

一个全新的超快速系列

A new series of ultra-fast

频率高出十倍以上

with more than ten times the frequency

DALLAS.

ULTRA-FAST

70 纳秒硅整流器

SILICON RECTIFIERS WITH 70-NANOSECOND

洛杉矶，8 月 24 日 -

LOS ANGELES, Aug. 24 -

•

DIVISION

diffused-junction

of conventional

silicon rectifiers

rectifiers

was unveiled

由德州仪器（Texas Instruments）在 1964 年 WESCON 展会开幕时推出，被描述为适用于高频开关等应用的理想选择。

by Texas Instruments with the opening of the 1964 WESCON Show. Described as ideal for such uses as high-frequency switching,

以及多阶段

and multi-phase

registered

as 1N3884-3893.

rectifier

applications,

power supplies,

新的扩散结

the new diffused-junction

它们的额定电压从 50 伏到 400 伏不等。

They are rated from 50 to 400 volts,

这代表了 TL 1s 高速网络的延伸。

represent an extension of Tl 1s high-speed

high-speed

6-amp l N3874-3883

12 amps.

新的设备是

devices are The new units

series {originally

introduced

在 TIX440-442 中）。

6 安培和 12 安培的高速隔离顶帽式产品均有供应。

as TIX440-442). Both the 6- and 12-amp high-speed isolated top-hat are available

rectifiers

标准尺寸的柱栓包装以及 DO-4 标准圆顶封装

stud package as well as the DO-4 standard top-hat

在 JEDEC DO-10 标准中

in the JEDEC DO-10 stud.

DO-4 设备

The DO-4 devices

在两个方向上都兼容标准极性和反向极性。

in both standard and reverse polarity.

Electrical

characteristics

包括极短的恢复时间（典型值为 70 纳秒，

include very low recovery time (70 nsec typical,

最大电流能力（high current capability）

maximum), high current capability

(15 amps d-c,

降到零（在 150°C 时）且极其

to zero at 150°C) and extremely

high rectification

典型的去中心化（de-to-de）优势

The advantages typical de-to-de

这样的高频

of such high frequency

converters.

衡量大约效率。

measure approximately efficiency.

现在已可用。

are now available

400 cubic inches,

A 25-kc converter

仅有约 160 立方英寸。

only about 160 cubic inches,

12 安培平均，至 100°C，降额使用

12 amps average to 100°C, derated efficiency

capability

A 1-kc converter

200 nsec

to 150 kc.

可以从以下两者的对比中看出这一点

can be seen in a comparison of two

using conventional

500-watt

rectifiers

ADDRESS,

POST

OFFICE

would

大约重 50 磅，出肉率不到 70%。

weigh about 50 pounds and offer less than 70%

使用新的高频

using the new high--frequency

500-watt

单位为 500 瓦

units would measure

它们的重量仅有 20 磅，效率却超过 90%。

weigh only 20 pounds and offer better than 90% efficiency.

(more)

MAILING

linearly

BOX

5012

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE,

TEXIN5

第二页

超快硅整流器

Page two Ultra-fast silicon rectifiers

6 安培 1N3874-3883 型号的价格按数量计算；

Prices for the 6-amp 1N3874-3883 quantity;

the 12-amp l N3884-3893

价格区间从 10.70 美元起。

series range from $10.70

提高到每股 17.00 美元（100-999 股）。

to $17.00 in the 100-999

系列价格从 11.25 美元调至 18.00 美元。

series from $11.25 to $18.00.

-30-

CAPTION

新款超高速硅整流管

现提供标准型与隔离型两种顶帽螺栓封装

德州仪器新型号 1N3874-98

JEDEC DO-4 顶帽封装

NEW ULTRA-FAST SILICON RECTIFIERSAVAILABLE IN BOTH STANDARD AND ISOLATED TOP-HAT STUD PACKAGES Texas Instruments new l N3874-98 JEDEC DO-4 top-hat

high-speed

silicon rectifiers

stud 和 DO-10 隔离式圆柱帽

stud and DO-10 isolated top-hat

6 安培和 12 安培设备，电压范围 50 到 400 伏。

纳秒级，

高速。

6- and 12-amp devices ranging from 50 to 400 volts. nanoseconds, high-speed

are available

配种服务包。

stud packages. With typical

Ratings include

恢复时间为 70

recovery time of 70

新业务单元非常适合高频开关和多相电源等高频率使用的应用场景。

the new units are wel I suited for such uses as high-frequency switching and multi-phase

rectifier

applications.

在这两种情况下，

in both the

power supplies,

[e,,,cl

2~1 A~'.). l'\b"I , •,.oc

lcJ, \ '--o•"'I ~c..-4;

~' e.., ',

r.I<'·pt,,.,lo . Lo\\, f'or o ('} 1

杰克·米勒

内部分机 1206

Jack Miller Extension 1206

新闻稿 NR102

“=或发布 1964 年 8 月 24 日

NEWS RELEASENR102 "=ORRELEASEAUGUST 24, 1964

TEXAS

INSTRUMENTS

INCORPORATED

INSTRUMENTS INCORPORATED

SEMICONDUCTOR

BUILDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

Varactor 系列产品，频率高达 300 Gc，现已发布

VARACTOR SERIES WITH 300-Gc ANNOUNCED

洛杉矶，8 月 24 日 -

LOS ANGELES, August 24 -The

扩散型砷化镓

diffused gal Iium-arsenide They are specifically

varactors

DALLAS.

TEXAS

切割频率

由德州仪器

CUTOFF FREQUENCY BY Tl

TIXV0l varactor

在 -2 伏特下的频率已被公布。

frequency at -2 volts, was announced

•

DIVISION

diode series,

featuring

今天在这里有德州仪器（Texas Instruments）的参与。

here today by Texas Instruments.

有一个正常的运营。

have a normal operating

专为参数化使用而设计

designed for use in parametric

frequency

amplifiers,

300-Gc

cut-off

新型外延材料的锗含量范围为 1 至 20。

The new epitaxial range of 1 to 20 Ge.

with a capacitance

range

频率从 0.35 到 1.0 pf。随着新 TIXV0l 系列的加入，

from 0 . 35 to 1 . 0 pf. With the addition of the new TIXV0l series, frequency

从直流到 300 GHz 的频率范围。

spectrum from DC to 300 Ge.

the A580-589,

500 Mc.

the A580-589, 500 Mc.

操作频率

ating frequencies operate

在频率分布的低端

At the low end of the frequency

和 A660 电压可变

and A660 voltage-variable

Next,

the complete Tl varactor

capacitance

diodes,

具备正常的运营特点

features normal oper

A600、A6l0 和 D500 微波变容二极管

The A600, A6 l 0, and D500 microwave varactors

从 1 Ge 到 10 Ge，以及 A900-903 和 A905-908。

from 1 Ge to 10 Ge, and the A900-903 and A905-908

从 1 个 GE 到 20 个 GE。

from 1 Ge to 20 Ge.

从 1 Ge 到 20 Ge。

band, Tl offers

其业务范围从华盛顿特区延伸至

which operate from DC to

A706-713 系列硅谐波发生器，频率范围从 100 兆赫到 5 吉赫。

the A706-713 series of silicon harmonic generators from 100 Mc to 5 Ge.

harmonic generators

随着 TIXV0l 系列产品的推出，这一系列选择变得更加完整。

With the TIXV0l series rounding out the selection,

行业最齐全的产品线

industry's most complete selection

of varactor

Al I Tl 变容管以多种封装形式提供，性能极为优异。

Al I Tl varactors offer extremely in a variety of packages,

including

这个横贯

line spans the

Tl 提供……

Tl offers the

units.

高“Q”值和低电感。

high "Q" values and low inductance.

industry-standard

configurations

单元来了

The units come

以及特殊设计。

and special designs.

设计者实现的一个特殊好处

One special benefit designers achieve

使用这些单元的一个好处是设备一致性。

from use of these units is device un)formity,

electrical

and guaranteed.

参数被严格控制

parameters tightly controlled

签字人拥有更多自由，不必再因人而异地去处理变容管的各项特性。

signer more freedom from the necessity of individually istics of the varactors

operate

with

这种统一性使得每个电路的调谐

This uniformity allows the de tuning each circuit to the character

used.

more -

used.

more -

MAILING

ADDRESS

POST

OFFICE

BOX

5012

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

Tl 公司发布截止频率达 300 GHz 的变容管系列产品

第 2 页

TIXV0l 系列样品现已可供货

单价 200 至 600 美元

Varactor Series With 300 Ge Cutoff Frequency Announced by Tl Page 2 Samples of the TIXV0l series are immediately $200 to $600 each.

Additional

information

来自半导体元件部

from the Semiconductor-Components

division,

available

from stock.

价格从

Prices range from

可从德州销售办事处或达拉斯总部直接获取。

is avai Iable from Tl field sales offices or directly Dal las.

30 -

30 -

CUTLI NE

300 个 GE 变容二极管

300 Ge VARACTOR DIODES

那个微小的变容二极管

The tiny varactor

微波炉的法兰上显示着

shown on the flange of microwave

德州仪器。运算放大器。

Texas Instruments. operating amp Iifiers.

frequency

截止频率

The cutoff frequency

这个新二极管的参数是 300 Ge。

of this new diode is 300 Ge,

范围从 1 GE 到 20 GE，

range is from l Ge to 20 Ge,

is a TIXV0l,

from

at -2 volts.

Normal

波导接头

wave guide fitting

它们就是这样设计的。

and they are designed

用于参数化设定

for use in parametric

[eV\L\,#Z..,1--L-I

A.v~r l'1.C.."l)5e-e_p.R. Ph<rtu Coll- ~o<

[eV\L\,#Z..,1--L-I A.v~r l'1.C.."l)5e-e_p.R. Ph<rtu Coll- ~o<

[_\Jt..,~' lo, D,ode 1

!)114

Ext.

Clark W. Fishel,

8/24/64

Clark W. Fishel, 8/24/64

C43 0

RELEASE

C43 0 RELEASE

新闻稿

即时发布

NEWS RELEASE FOR IMMEDIATE

INSTRUMENTS

TEXAS

INCORPORATED

Aug.

25- -(Special)-

WESCON 的交付

WESCON the delivery

of experimental

The

in the

The in the

the U.S.

with

1n conjunction

transistor,

region,

supplement

在某种程度上

it in some

and may

conditions

input

has

as 400° C, while

The new

optoelectronic

pulse

of gallium

arsenide

to provide

and output.

In March

for

TI and for

by Texas

Instruments

advances

produces

of this

year

output

silicon

transistor

the

satisfactorily

operate

transistors

observed

transistors observed

under

laboratory

are

limited

to 125°C.

devices

exploits

amplifier

complete

amplifier complete

发光的隔离

the light-emitting isolation

electrical

an optoelectronic

TI announced

in a higher

to operate

between

multiplex/

between multiplex/

(more)

MAILING

ADDRESS·

POST

OFFICE

BOX

the

100 milliwatts

over

100 milliwatts over

advantage

been

silicon

as high

properties

Air

which

arsenide

action

C, and transistor

200

Patterson

pursued

at over

opto-

由于其能力

due to its ability

applications

TI gallium

environment.

temperature

and

being

a distinct

offers

500 megacycle

transistors

Force.

Air

arsenide

gallium

program

research

applied

arsenide

gallium

Wright

significant

two more

marks

This

Ohio.

Base,

Force

today

Laboratory,

对于航空电子业务

to the Avionics

amplifiers

pulse

electronic

arsenide

gallium

FORCE

announced

Instruments

-Texas

TEXAS

运输

至

DELIVERY TO AIR

DEVICES

ARSENIDE

OF GALLIUM

DALLAS,

•

EXPRESSWAY

CENTRAL

NORTH

ANNOUNCES

INSTRUMENTS

TEXAS

LOS ANGELES,

13500

•

BUILDING

RESEARCH

OFFICES

CORPORATE

5474

•

DALLAS.

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

15 55

第二页

砷化镓

page two arsenide gallium

chopper

which

emitting

diode.

作为一个必需品

as an essential

incorporates

for

semiconductors

its

research

and

than

five

years.

In 1959,

The

first

arsenide

regulator

diode,

arsenide

varactor

diodes

was

diodes,

In 1962 the

was

introduced

关于市场。

to the market.

effort

in many

special

devices

along

with

gallium

arsenide

infrared

light

gallium

The

arsenide.

semiconductor

in 1960,

semiconductors.

是镓

is gallium In addition

of gallium

illustrative

of all

致各位股东：

to the various

effort

at Texas

with

active

and

discrete

objective

passive

devices,

involves

devices, involves

Instruments

components

-30-

arsenide

of Tl's

semiconductor

compound

a gallium

TI 宣布

TI announced to be a line

are

properties

唯一性

the unique of which

compound

in compound

grown

of several

developments

work

has

of what

announced

first

tunnel

The latest

development

pursuing

been

TI has

the

light-

arsenide

gallium

element

active

total

technical

of this

effort

剥削

is to exploit

materials,

part

the

part the

emitters

总计

of the total

incorporation

in functional

type

one leading

复利

compound of these

electronic

blocks.

358

Ext.

Jack Briner,

8/ 24/ 64

Jack Briner, 8/ 24/ 64

C428

RELEASE

C428 RELEASE

新闻稿

即刻发布

NEWS RELEASE FOR IMMEDIATE

INSTRUMENTS

TEXAS

INCORPORATED

•

INCORPORATED •

SPEEDWAY

BUFFALO

3609

complete

will

be shown

for

Electronic

Show and

Convention

(WESCON).

658,

is produced

by Tl's

Houston-based

1964 Western

of the

Model

新的测试员，

The new tester,

suitable

particularly

Basic

program

of other

packages

available

在多种情况下

in a variety Other the

excess

voltage

duration

of each

test

which

or oscillation,

rack,

bench

would

include

damage

devices

are

安装。

准备。

保护。

installations. provisions protection

programmable

以及内在的

and built-in

also

units

or modular

system

在这 658 项测试中

of the 658 test

features

outstanding

for

same

The

enclosure.

a table-top

including

$8800,

658 is under

一个抽屉式的

and a drawer-type

unit

changing

in either

changes

frequent

involving

programs

模型

of the Model

price

process

for

test

system

low-cost

flexible,

as a highly

at the

today

here

time

first

quantitie,s.

or large

small

for

the

它是有意为之。

It is designed

Group.

Products

Industrial

conditions

of test

programming

digital

and

transistor

Instruments

Texas

features

logic

state

并且全部—— 坚实的开局。

and all- solidopening

that

system

test

diode

-A new

25- -(Special)-

August

LOS ANGELES,

CONVERSION

SIGNAL

MEASURING,

WELDING,

TESTING,

FOR

AT WESCON

NEW EQUIPMENT

DISPLAYS

GROUP

PRODUCTS

INDUSTRIAL

TI'S

TEXAS

HOUSTON.

DIVISION

APPARATUS

test.

under

(more)

MAILING

ADDRESS

POST

OFFICE

BOX

66027

•

HOUSTON,

TEXAS

77006

•

JACKSON

6-1411

•

CABLE

TEX/NS

from

page two

Tl 的工业

page two Tl's industrial

products

model

A new

unit

TI introduced

flat

mounting

controlled

integrated

circuits

greater

New

Transistor

drift

problems

able

with

over

seconds

(millionths

computer

interface

模数转换，

Analog-to-Digital,

throat

four

at least

measurement

time

9. 99 nanoseconds

made

instrument,

eliminates

instrument, eliminates

design

state

solid

A new

instruments.

generally

instruments. generally

the presentation

times

are

times are

Introduced

Instrument

conventional

with

encountered

from

using

techniques

抽样

（秒级单位）

sampling of seconds)

(billionths

avail-

make

Converters

以及数模转换（Digital-to-Analog Conversion）至关重要。

and Digital-to-Analog important

additions

to its

with

to its with

equipment

at WESCON

and Model

854 数字转模拟

854 Digital-to-Analog

(more)

the

line

of data

introduction

converters.

introduction converters.

Expand

and

to 9. 99 micro

of seconds).

模拟到数字

德州仪器（TI）将

Analog-to-Digital TI will

Its

今天由 TI 发布。

by TI today.

Measurements

ranges

counting

for

以及新款五英寸

and new five-inch

microscope

switching

transistor

oscilloscopes.

control

width

pulse

Measurement

Time

Switching

provides

automatically

boards,

selectable

for

designed

freedom,

working

normally

window"

"readout

weld.

A "swing-out"

be introduced

will

641,

each

a new

has

also

705B

全固态模型

An all-solid-state Model

circuit

to complete

sensitivity.

provide

to printed

original

the

welder,

平行缺口

The parallel-gap

ago.

welder

circuit

than

circuit than

powerful

times

是七年。

is seven a year

show

required

Model

welding

depth

我猜 TI 的动态发展

of TI I s dynamically

of integrated

The

greater

The greater

Welder

at the

the voltage

adjusts

Controlled

at WESCON

有待证明

to be demonstrated

Shown

Dynamically

Powerful

Line

收购 Model

acquisition of Model

and

846D

and 846D

第三页

伯克希尔的工业板块

page three TI' s industrial

The systems, signals

products

typically

from

typically from

which

converters,

missiles

Both new

are

vital

space

instruments

functions

electronic

equipment

在地面站

in ground-based

used

and

used and

perform

that

handles

within

larger

telemetry

vehicles.

combine

vehicles. combine

high

operational

reverse

side

speed

with high

accuracy.

-30-

Copies

of photographs

reproduced

on the

are

available

upon

request.

德州仪器

公司

部门

设备

斯比德韦

布法罗 3609 号

77 006

德克萨斯州

休斯顿

INCORPORATED TEXAS INSTRUMENTS DIVISION APPARATUS SPEEDWAY 3609 BUFFALO 77 006 TEXAS HOUSTON,

658 TRANSISTOR

MODEL

AND DIODE

TESTER

MODEL 705B

INTEGRATED

MODEL 705B INTEGRATED

控制的

动态的

电路焊接器

CONTROLLED DYNAMICALLY CIRCUIT WELDER

f/1

•

…

,…

• •••

............ .. ... ,. .. • •••

•••

• • • •'

..,

• • • •' ..,

• …

• .....

--•

:,,).• • • •

--• :,,).• • • •

MODEL

846D 模数转换器

846D ANALOG-TO-DIGITAL

CONVERTER

SWITCHING MODEL 641 TRANSISTOR INSTRUMENT TIME MEASUREMENT

MODEL

D-l

…

....

CONYUTER

854 数字转模拟

854 DIGITAL-TO-ANALOG

CONVERTER

新闻稿 NR117

发布日期：8 月 25 日

NEWS RELEASE NR117 FOR RELEASEAUGUST 25

唐·沙林豪森

分机号 593

Don Scharringhausen Extension 593

TEXAS

INSTRUMENTS

INCORPORATED

SEMICONDUCTOR

INCORPORATED SEMICONDUCTOR

BUILDING

•

13500

NORTH

CENTRAL

EXPRESSWAY

SEMICONDUCTOR-COMPONENTS

•

DALLAS,

TEXAS

DIVISION

1.5 吉，1/4 瓦晶体管已发布

1 .5 Ge, 1/4-WATT TRANSISTOR ANNOUNCED

洛杉矶，8 月 25 日

LOS ANGELES, August 25 -

来自德州仪器

BY TEXAS INSTRUMENTS

(Special) -A

high-frequency

developmental

设计用作变容二极管的主要信号源或驱动器，可工作于 C 波段、X 波段或更高频率。

designed for use as a primary signal source or driver for varactor to C, X or higher frequency

乐队宣布成立。

bands was announced

multiplier

晶体管，

连锁门店

transistor, chains to go

今天在德州仪器（WESCO）上。

at WESCON today by Texas Instruments

注册成立。

被指定为 MD-49-4 型号，单芯片连接。

Incorporated. Designated the MD-49-4, single chip connected

这个装置由四个独立的部件组成。

the device is made up of four individual

通过蒸发

by an evaporated

领导模式形成两对。

lead pattern to form two pairs.

设备上的

特征

devices on a Characteristics

对于最终器件，其输出为 1.5 Ge；在 VcB = 15 伏的条件下，最小功率为 0.25 瓦。

其他重要参数如下：

of the final device offer 1.5 Ge output; 0.25 watts (min) at VcB = 15 volts, Other significant

characteristics

le=

100 ma.

include:

BVCBO = 30 伏（最小值）

BVCEO =

BVCBO = 30 volts (min) BVCEO=

15 volts (min)

BVEBO = 4 伏特（最小值）

BVEBO = 4 volts (min) ft

Development

MD-49-4 型号

of the MD-49-4

对于两种常见的应用场景，乘数（multipliers）

for two general applications, multipliers

1.2 到 1.8 Ge（典型值）

= 1.2 to 1.8 Ge (typ)

（根据舰船局合同）

(under Bureau of Ships contract

#NObrs-89423)

was

作为使用变容二极管的高频源驱动器之一

one as a driver for higher frequency sources using varactor

以及第二个方面，作为基本面。

and a second as a fundamental

虽然变容管倍频器

Although varactor multipliers

低功耗的源代码

source for low-power

portable

radars.

现在可以设计得效率非常高了。

can now be designed to operate very efficiently,

为了简化电路

is in the interest of circuit simplicity

从尽可能高的频率开始

to start at the highest possible frequency

reasonable

基于 1.5 倍的基本面。

With the 1 .5 Ge fundamental

权力是可以获得的。

power can be obtained.

where

MD-49-4 的来源，

source of the MD-49-4,

(more)

MAILING

ADDRESS

POST

OFFICE

BOX

5012

•

DALLAS,

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

第 2 页

1.5 吉，1/4 瓦晶体管

Page two 1 .5 Ge, 1/4 Watt Transistor

可以相对容易地倍增到 C 波段、X 波段甚至 KU 波段。

it is possible to multiply up to C, X and even KU bands with relatively

simple circuitry.

目前正在设计和制造的变容管倍频器，在四倍频时效率可达 50%。

Varactors multipliers are now being designed and built that have an efficiency 50% when multiplying by four, e.g.,

15 亿千瓦时到 60 亿千瓦时。

1 .5 Ge to 6 Ge.

一个 MD-49-4 的单一元素

A single element of the MD-49-4

Texas Instruments 报道，一个输出功率为 100 mW、频率为 2.25 GHz 的信号源被用来驱动一个变容管倍频器，在 9 GHz 频率上产生了 25 mW 的输出功率。

with an output power of 100 mw at 2.25 Ge has been used to drive a varactor multiplier to give 25 mw at 9 Ge, Texes Instruments report~d.

30 -

30 -

1559

Ext.

Dick Perdue,

8/25/64

Dick Perdue, 8/25/64

C42 9

RELEASE

C42 9 RELEASE

新闻稿

即时发布

NEWS RELEASE FOR IMMEDIATE

INSTRUMENTS

TEXAS

INCORPORATED

opening

of the

announced

two new

advances

in semiconductor

target

of research

semiconductor

products

here

Show and

Convention.

TI also

to systems.

materials

highlights

exhibit

It includes

eight

using

eight using

由现场系统提供

by the Apparatus

division

in Dallas,

new instruments

produced

由工业

by the Industrial

rnaterials,

thermostats

clad

Eleven

demonstrate

Eleven demonstrate

in the

gallium

arsenide

transistors

the

company

new

types

total

produced

equipment

Group

MAILING

new

in Houston;

five

and new

按照材料计算

by the Materials

& Controls

integrated

circuits':'

multi-function'

semiconductor

CIRCUIT®

SOLID

concept

that,

TI 副总裁

to TI Vice

according

President

TI 致辞

by TI ADDRESS:

built

circuits;

integrated

semiconductor

from

capability

of aerospace

Products

switches

(more)

,:,Patented

(more) ,:,Patented

and

industry,

Mass.

in Attleboro,

division

and

efforts

environments.

Centigrade

60-ft

Tl's

today

of experimental

Force

S. Air

in 200°

can operate

the

been

have

have U.

to the

配送

the delivery that

long

that

Electronic

Western

at the

125 new

technology

introduced

Incorporated

Instruments

25--(Special)--Texas

August

LOS ANGELES,

TRANSISTOR

200-DEGREE

AND NEW

ADVANCES

TECHNOLOGICAL

REVEALS

AT WESCON;

PRODUCTS

SEMICONDUCTOR

125 NEW

TI INTRODUCES

TEXAS

DALLAS,

•

EXPRESSWAY

CENTRAL

NORTH

13500

•

BUILDING

RESEARCH

OFFICES

CORPORATE

POST

OFFICE

BOX

5474

•

DALLAS,

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

Cecil

第二页

TI 纪录

page two TI record

number

Dotson,

makes

contains

最多四个

up to four

or more

functions

in a single

package

effective

cost

and fewer

interconnections

can

interconnections can

the

assembly

TI also

announced

in one

20, 000

in one 20, 000

minute.

for

than

molecular

electronic

cigarettes

and

100 times

transistorized

subjected

Use

Demonstrates

eight

TI 正在展示两打作品。

TI is displaying two dozen

such

PCM

telemetry

only

15 ounces.

weighs

smaller

weighs smaller

system

integrated

circuits,

extending

and

50 times

space

acceleration

of Integrated

Circuits

most

recent

这是

It is the

它更轻便一些。

It contains lighter

(more)

is a U.

than

integrated

S. Air

size

built

Force

两包中

of two packs

285. 德州仪器半导体公司（TI Semiconductor）

28 5 TI semiconductor a functionally

circuits,

or being

delivered

already

encoder.

version.

using

equipments

a family

example,

For

applications.

to a constant

broadly

and tested

but processed

line,

reliability.

include

They

applications.

equipments

其中之一是

One of the

applications.

aerospace

improving

and

are

manu-

while

military

a full

new

33 other

packages

equipment

further

the

inch,

the

standard

G I s 11 for

typifying

system,

such

several

fewer

because

in a total

of silicon

of a cubic

a thousandth

And

a thousandth And

the

networks

Today,

with

paralleling

the

Equipment

Thus,

and industrial

tests

of the

functions.

reduced.

still

severe-environment

for

especially

bar

space

military,

networks

military, networks

关于 15 个低功率

of 15 low-power

required

costs

required costs

reduce

of their

range

are

monolithic

than

less

measuring

is significantly

circuit

per

circuit

complete

tiny

each

approach

multi-function

In the

facturer

com-

conventional

applications.

most

for

ponents

with

competitive

fully

circuits

TI integrated

identical

networks

of networks

页三

TI 纪录

page three TI record

number

device

designed

to simplify

a Navy

Bureau

of Ships

per

1/4

with

second)

silicon

PNP

base

TI transistors

choppers

that

cost-critical

for

A new

an extremely

features

today

gallium

devices

of this

control

fields.

type

Other

now are

new

power

supplieso

arsenide

varactor

high

cut-off

being

applied

TI diodes

and

reliability

and

general-purpose

for

high

current

capable

use

capable use

of switching

in auto

( 50 amp)

at WESCON

TI introduced

series

diode

power

germanium

frequency

(300

gigacycles

at -2 volts).

broadly

in the

microwave

and

rectifiers

new

diodes

ignition

one-amp

capability

industrial

consumer,

rent

and

semiconductor

are

industrial

include:

planar

include: planar

using

of the

zene r,

construction

techniques

switching,

techniques switching,

conductance

high-

types.

Three

types. Three

provide

conventional

and

They

ruggedness.

many

high-cur

six

Twenty-eight for

replace

planar-epitaxial

first

industry's

the

include

can

and

choppers;

electromechanical

transistors

electromechanical transistors

outputo

watt

new

watt new

Other

of times

(billions

at l. 5 gigacycles

It operates

contract.

under

developed

It was

radars.

in portable

circuitry

the

frequency

a high

was

today

TI announced

is tors

trans

12 new

the

Among

Devices

Semiconductor

New

Five

in a hermetically

package

glass

military

applications

where

space

high-power,

high-speed

silicon

gate

and

最高 750 瓦系统

up to 750 watts systems,

sealed

in 3 microseconds

flourescent

(more)

light

ballasts,

well-

suited

是至关重要的。

is critical. controlled

(millionths

and

(millionths and

that

rectifiers

silicon

glass-encapsulated

other

switches

工业领域

of seconds) industrial

for

第四页

蒂芙尼（Tiffany）创下纪录

page four TI record

number

应用程序。

app]icc1tions. made

possible

new

the

industry's

refractory

metal,

ing wires

can

arise

at high

contact

surfaces.

Tl's

It involves

a unique

method

高速的

of a high-speed

avoiding

metals.

TI already

achievement

FRE

silicon

switch.

into

other

silicon

TI Announces

Delivery

<lrsenide

transistors

Avionics

Laboratory.

and

marks

known

leakage

current

technique

now

在 WES CON 上，感受脉搏。

at WES CON the pulse

two more

(more)

first

Thus,

gold

connect-

"surface

operated

are

devices

used

devices used

method

Relief

"Field

industry

when

can

that

new

that new

the

in the

在制造业中

in the production to

is underway

TI lines.

delivery

amplifiers

significant

amplifiers significant

of depositing

complications

Devices

Arsenide

are

is called

solution

is being

in the

transistors

known

connections

when

program

An extensive

opto-electronic

This

is termed

of Gallium

today

TI announced

TI revealed

high

causes

PNP

FRE

PNP FRE

circuits.

generally

a condition

to eliminate

is using

integrated

and

TI 1 s new

the

surface,

components

is a method

material.

semiconductor

the

onto

to a gold

condition

temperatures.

incorporate

caused

它阻止了

It prevents The

inversiono"

spot

of dissimilar

A second

Electrode.

A second Electrode.

trouble

be bonded

discrete

both

making

is a potential

gold,

then

the use

from

semiconductor

system,

contact

"refractory

affects

to aluminum

wire

gold

with

made

This

plague.

"purple

receiver.

devices,

commonly

that

a condition

completely

today

TI disclosed

advance

One technological

television

Technology

in Semiconductor

Advances

New

switch

solid-state

large-screen

first

that

controlled

gate

of Tl's

1s an outgrowth

series

This

to Air

Force

gallium

Force gallium

在这个实验性的领域，

正在向

前沿推进。

of experimental to the advances

美国航空

Uo S. Air for

Force's

TI and for

第五页

TI 纪录

page five TI record

number

the

gallium

Air

Force.

The

Force. The

the

silicon

to operate

ability

may

supplement

at temperatures

above

and

transistor

of 125°c

for

emitting

properties

它在某些方面

it in some

advantages

aver

applications

because

of its

to a maximun,

compared

complete

light-

the

exploits

amplifier

pulse

to provide

arsenide

of gallium

distinct

200° Centigrade,

opto-electronic

new

The

silicon.

with

some

has

transistor

arsenide

gallium

the

由 TI 联合

by TI 1n conjunction

pursued

being

program

research

arsenide

electrical

isolation

technical

effort

a circuit.

These

a circuit. These

developments

unique

properties

exploiting

the

gallium

砷化物。

新

Tl's

arsenide. New Tl's

equipments

today

完整

模型

强大

complete model powerful

of test

digi t2l 编程

TI 的

比

digi t2l programming of TI's than

dynamically

the

dynamically the

original

controlled

unit

controlled unit

Group

and

conditions

and

integrated

circuit

TI introduced

-30-

five

unveiled

circuit

integrated

transistor

low-cost

A highly-flexib]e,

conversion.

testing;

semiconductor

Show~_

Products

Industrial

including

semiconductors,

Equipment

Industrial

total

active

compound

of many

总部位于休斯顿的

Houston-based for

Tl's

illustrate

diode

welding;

test

welding; test

at WESCON

a year

signal

and

system

features

logic.

A new

all - so lid- strtte

焊工

all - so lid- strtte welder

new

是七年前的事了。

is seven ago.

times

新闻稿

即时发布

NEWS RELEASE FOR IMMEDIATE

RELEASE

INSTRUMENTS

TEXAS

INCORPORATED

CORPORATE

INCORPORATED CORPORATE

word

that

the ruling

SUIT BROUGHT

in a patent

Instruments

BY SPERRY

RAND

has

received

has

upheld

Circuit

Fifth

suit

infringement

of Texas

District

the Northern

for

Court

District

States

TEXAS

DALLAS,

Incorporated

for the

of Appeals

Court

States

合众国

得克萨斯州

of the United of Texas

赞成。

in favor Rand

the United

•

EXPRESSWAY

CENTRAL

Instruments

-Texas

28--(Special)-

August

DALLAS,

NORTH

13500

TI IN PATENT

UPHOLDS

COURT

APPEALS

•

BUILDING

RESEARCH

OFFICES

by Sperry

brought

Corporation.

Sperry

Corporation. Sperry

germanium

Rand

semiconductor

2,530,110

semiconductor 2,530,110

Patent

Woodyard

germanium

Woodyard germanium

suit

filed

1959 alleging

9 月，德州仪器

TI in September

against

manufactured

granted

to Sperry

Rand

in Federal

Court

at Dallas

In his

ruling,

which

in 1950 relating

整流器。

试过了。

rectifiers. was tried

惠特菲尔德公司

The case Whitfield

Judge

Court

of Appeals,

无效议题

in is sue invalid

Davidson.

Judge

Davidson. Judge

Davidson

dismissed

in May

was upheld

the action,

1962 年之前，通过巡回法院

1962 before by the Circuit

adjudging

the claim

并且没有受到侵犯。

and not infringed.

-30-

MAILING

all

upon

TI 公司侵权。

by TI infringed

devices

that

ADDRESS

POST

OFFICE

BOX

5474

•

DALLAS,

TEXAS

75222

•

ADAMS

5-3111

•

CABLE

TEXINS

.•

,…

/,'

,... /,'

美国上诉法院

United States Courtof Appeals

•

针对第五巡回法院

FOR THE FIFTH CIRCUIT

No.

SPERRY

IN THE

;

IN THE ;

19866

RAND CORPORATION,

上诉人，

诉

RAND CORPORATION, Appellant, versus

TEXAS INSTRUMENTS

INCORPORATED,

Appellee.

INCORPORATED, Appellee.

• f

上诉来自美国德克萨斯州北区联邦地区法院。

Appeal from the United Statea District Court for f'Jae Northern District of Texas.

•

(August 25, 1964.)

(August 25, 1964.) j

在赫奇森法官和布朗法官（巡回法官）以及克里森贝里法官（地区法官）的审理之前。

Before HUTCHESON and BROWN, Circuit Judges, CHRISTENBERRY, District Judge.

and

原告-上诉人在巡回法官哈奇森审理下，针对德州仪器公司提起了专利侵权诉讼。地区法院就此事出具了一份见解独到的意见书及详尽的裁定。

Plaintiff-appellant Judge: Circuit HUTCHESON, 1 brought this action for Sperry Rand Corporation Inc. against Texas Instruments patent infringement The district court filed an able opinion and extensive 1

斯佩里兰德公司（Sperry Rand Corporation）是斯佩里公司（Sperry Corporation）的权利继承人，后者是被指控侵权的伍迪亚德专利（Woodyard No. 2,530,110）的受让人。

t Sperry Rand Corporation is the successor in interes to the Sperry Corporation assignee of the patent alleged infringed, Woodyard No. 2,530,110. I

'1·

Inc.

Sperry Rand Corp. 诉 Texas Instruments 案

Sperry Rand Corp. v. Texas Instruments

法院认定事实与法律适用后，驳回了诉讼请求，判定涉案权利要求无效且未构成侵权。被指控侵权的权利要求涉及一种锗整流器，内容如下：

findings of fact and law. 2 He dismissed the action, adjudging the claim in issue invalid , td not infringed. The claim alleged infringed is for a germanium rectifier and reads as follows:

alloy

“10. 单向装置，包括一个构件、与所述构件一部分接触的第一导体、以及与所述构件不同部分接触的第二导体，所述构件由锗基合金构成，所述合金的次要成分由氮族元素中的一种或多种元素构成，所述合金还含有 1% 或更少的所述次要成分。”

conducting apparatus "10. Unidirectionally comprising a member, a first conductor in contact with a part of said member, and a second conductor in contact with a different" part of said member, said member being constituted of a germanium base alloy, said alloy having a minor constituent constituted of one or more elements of the nitrogen group, said alloy further containing 1% or less of said minor constituent."

• .•

:1,

•..

.,I ,.

•'•

1 '

被指控的器件是生长结晶体管，这是一种由单晶锗构成的晶体管，其部分区域与氮族元素形成合金，部分区域则与其他元素形成合金。

The accused device is the grown junction transistor, that is a transistor composed of a single crystal of germanium, portions of which are alloyed with ele ments of the nitrogen group and portions of which are alloyed with other elements. I

初审法官认定，伍德亚德专利权利要求并非其本人发明的成果，而是珍珠港事件后由政府召集的一批科学家——作为国防研究委员会的一部分——发明的成果。法官进一步认定，即便该专利有效，也不构成侵权，因为原告未能证明该专利涵盖了晶体管的核心要素。上诉人对这两项认定均提出异议，第一项

The trial judge found that the Woodyard patent claim was not the product of his invention but was the product of the invention of a group of scientists assembled by the government after Pearl Harbor as part of the National Defense Research Committee. He further found that if the patent was valid it was not infringed since the plaintiff had not proven that the patent embraced the elements of the transistor. The appellant attacks both of these findings, the first 2

206 F.Supp. 676 & …

206 F.Supp. 676 & ....

•

F.Supp…(

F.Supp. . . . . (

)

,,,

Sperry Rand Corp. 诉 Texas Instruments

Sperry Rand Corp. v. Texas Instruments

Inc.

: …

: ...

…'

,..

. .. ' ,..

·'…,.

·'.. .,.

基于以下五项理由（最后一项基于三项理由），攻击方的核心论点是：两项裁决均存在明显错误。我们维持原判并认可下级法院作出的裁决。我们不同意攻击方的观点。

证据数量庞大、相互矛盾且不够清晰。上诉方在本上诉中主要依赖发明人的直接证词，以证明各方公认的关键事实——即在 1942 年 4 月下旬，通过向提纯的锗中添加铋元素来制造性能更优的整流器。这一证词虽得到一位与该发明人共事的机械师证词的支持，但其说服力因以下事实而大打折扣：发明人本人声称无法确定自己究竟是做出了这项发明，还是仅仅验证了他人的成果；此外，其大部分证词都以基于证言和书面证据得出的发明结论形式呈现，而这些证据同样可以被解读为对其发明主张的反证。据称的发明人及其公司的笔记本均未显示在 1942 年 12 月之前曾向锗中添加过氮族元素，而该小组的其他成员早在更早时就已进行过此类添加。然而，这些笔记本并非对锗的研究毫无记载。它们表明，伍迪亚德在 1942 年 4 月至 12 月期间曾进行过锗的提纯实验。

on five grounds, the last on three. The substance of the attacks is that both findings are clearly erroneous. We affirm the judgment and approve We disagree. the findings made below. and un The evidence is extensive, contradictory Appellant relies on this appeal primarily on clear. the direct testimony of the inventor to establish the crucial fact of invention which all concede to be the addition of bismuth to purified germanium to achieve an improved rectifier in late April, 1942. This testi by the deposition of a mony, though corroborated mechanic who worked with the inventor, was made by the fact, that the inventor less than persuasive deposed that he could not say whether he had made the invention or had merely verified the works of others, and by the fact that most of his testimony was in 'the form of conclusions of invention drawn from evidence and documentary depositions, testimony, which might be as readily interpreted to disprove his invention as to prove it. Neither the note book of the alleged· inventor nor that of his company shows the addition of a nitrogen group element to germanium ·until December, 1942, long after other members of These books are the· group had made such addition. They· indi not silent concerning germanium, however. purification the with cate that Woodyard experimented of germanium during the period from April until -De cember; 1942.

..'

,. ,.

',•

' .

..' ,. ,. ',• ' . /'

I I

…,

...,

,. ,'

)

上诉人严重依赖以下证据，这些证据表明伍迪亚德（Woodyard）向西屋公司的安杰洛（Angello）医生提供了信息。

Appellant relied here heavily on the evidence which indicates that Woodyard gave Dr. Angello of Westing-

…:.

., ...:.

•

:. • I

根据上下文，这似乎是一个不完整的引用，可能指代某个法律案件或学术引用。然而，基于您提供的单个段落，且无额外说明，我将严格按照要求逐段翻译。原文为一个单一段落，因此输出也应为单一段落。

译文：斯佩里-兰德公司诉德州仪器公司案。

Sperry-Rand Corp .. v. Texas Instruments.Inc.

1942 年 4 月 21 日，他们将一份锗样品存放在实验室，西屋公司的分析人员随后发现其中含有约 1% 的铋。他们由此推断，伍德亚德在自己交给安杰洛的锗中添加了铋。安杰洛作证说，伍德亚德没有告知他样品的成分。伍德亚德的证词则相反。同时检测的另一份未添加杂质的西屋公司锗样品，也被发现含有铋。证据表明，西屋公司认为两份样品中的“铋”，实际上是砷——一种天然存在于锗中的元素，在某些分析流程中很容易与铋混淆。

1942 年 5 月 11 日，普渡大学的拉克-霍罗威茨博士——当天他刚在斯佩里公司见过伍德亚德——向其实验室发电报，要求在纯锗中添加铋。上诉人假定这个主意来自伍德亚德，伍德亚德本人也如此作证，不过他承认拉克-霍罗威茨有可能从西屋公司的分析中得到这一想法。电报本身并未说明主意的来源。我们并未确信初审法官认定“不构成发明”的结论是错误的。（参见 Industrial Instrument Corporation 诉 Foxboro Co.，307 F[2] 783 [1962]）

关于侵权问题，证据同样矛盾。然而，有令人信服的证据支持初审法官的结论，即权利要求 10 仅限于单向导电器件，而晶体管是双向导电器件。

house a sample of germanium on April 21, 1942, which Westinghouse analysts subsequently found contained about one percent bismuth. They deduced from this that Woodyard had added bismuth to the germanium he gave Angello. Angello testified that Woodyard did not inform him of the contents of the sample. A Westinghouse Woodyard testified to the contrary. sample of germanium to which no impurities had been added analyzed at the same time was also found to The evidence indicates that what contain bismuth. Westinghouse thought was bismuth in both samples was arsenic, an element naturally appearing in ger manium and one which is easily confused with bismuth under certain analytical procedures. On May 11, 1942, Dr. Lark-Horowitz of Purdue Uni versity, who had visited with Woodyard at Sperry that same day, telegraphed his laboratory to add bis muth to pure germanium. Appellant assumes this idea came from Woodyard who so testified, though he admitted the possibility that Lark-Horowitz could have gotten the idea from the Westinghouse analysis. The telegram itself does not disclose the source of the idea. We are not firmly convinced that the trial judge erred in finding no invention. Industrial Instru ment Corporation v: Foxboro Co., 307 F(2) 783 (1962) . .As to the infringement, the evidence is equally as There is persuasive evidence, however, contradictory. supporting the trial judge's conclusion that Claim 10 conductive apparatus is limited to a unidirectional while the transistor is a bidirectional conductive ap-

',.

',. I

)

Sperry Rand Corp. v. Texas Instruments

.. Sperry Rand Corp. v. Texas Instruments

Inc.

同时，有令人信服的证据表明，虽然“帕拉图斯”专利权利要求 10 描述的是金属导体与锗合金半导体接触的结构，但晶体管是一种由单个锗晶体构成、并在其不同区域形成合金接触的器件，两者并不实质相同。伍德沃德专利所实现的整流功能与晶体管的放大功能也不相似。上诉人引用的 1917 年马可尼诉德福雷斯特案（243 F. 560，第二巡回上诉法院）对其毫无助益。本案初审法官已认定两者是不同的器件，其认定并无错误，此结论即为定论。谢尔巴茨基诉美国钢铁公司案（287 F[2] 552，第七巡回上诉法院，1961 年）。维持原判。

And there is convincing evidence that while paratus. Claim 10 describes metallic conductors in contact with a semi-conductor of germanium alloy, the transistor is crystal a device composed of a single germanium having various areas of alloy in contact one with identical. The devices are not substantially another. The results they accomplish, rectification for the Wood are yard device and amplification for the transistor not similar. Marconi v. DeForest, 243 F. 560 (2nd Cir. 1917) relied on by appellant is of no aid to him. The trial judge here has found distinctive devices, and there is no error in his findings, that is the end of it. Scherbatskay v. United States Steel Corporation, 287 F(2) 552 (7th Cir. 1961). AFFIRMED.

. '

' '"''

•'

' .,

;

美国法院行政办公室，东区分部

Adm. Office, U. S. Courts-E.

S. Upton 印刷公司，N. O., Le。

S. Upton Printing Co., N. 0., Le.

•

Bob Roth,

新闻稿

即刻发布

News Release For Immediate

Ext.

7 204 /

Release

METALS

METALS A

& CONTROLS

C O R P O

R A T E

INC.

I V I S

I O

德克萨斯仪器公司（TEXAS INSTRUMENTS INCORPORATED）

TEXAS INSTRUMENTS INCORPORATED

新高强度铜镍合金包覆不锈钢海底电缆耐腐蚀、延长使用寿命、减少维护量。阿特尔伯勒，马萨诸塞州，美国，海洋。

NEWHIGH STRENGTHCUPRONICKEL-CLAD STAINLESS STEEL UNDERSEACABLE RESISTS CORROSION, EXTENDSSERVICE LIFE, REDUCESMAINTENANCE ATTLEBORO,MASS., (U,S,A.), marine

cable,

comprising

nounced

by Metals

August

Inc.,

Incorporated.

Marketed

under

for

undersea

applications

and armoring

for

corrosive

buoy cable,

By metallurgically

not available

marine

cable

effectively

water.

These

include

growth

可以设计出来

can be designed

electrical

dissimilar

electrical dissimilar

resists

bite.

Service

of cable

and resultant

If a break

the

"fish

the "fish

stainless

steel

hooking,"

core

that

life

a life

flowing

loss

the

C-CLAD

在海上

污染

in sea fouling

或者更长时间

or more years

ratios

in the

2 到 6 个月的

of from 2 to 6 months

的（注：原文段落可能不完整，根据上下文推断为"is the primary of valuable"无法自然成句。但按输入"一段"处理，输出同样一段。）

首要的价值

is the primary of valuable

having

at 2 fps,

in the

impedes

the material

corrosion,

cause

greatly

reduces

per year

the corrosion

galvanic

action

and eliminates

broken

passage

collection

of data

instruments.

only a 0.0003"

cupronickel,

from corrosion

often

material,

从 2 到 5

of from 2 to 5

expectancy

关于新电缆，

of the new cable,

does occur

wear,

by changing

crevice

problem.

任何单一……的

of any single

kinking,

particularly

在海水中

in sea water

a combination

to obtain

fatigue,

Corrosion,

rate

tow line,

excessive

cables.

corrosion

is designed

cable,

found

most other

cladding

cable

factors

for

The cupronickel

is an-

德克萨斯仪器公司

of Texas Instruments

C-CLAD, the

materials

strands

wire.

failure

with

division

wire,

the detrimental

C-CLAD cable

compares

steel

cable.

basic

premature

This

-- A new type

例如海洋学

such as oceanographic

corrosion,

into

a corporate

in wire

and fish

stainless

TI 商标，

the TI trademark,

bonding

of properties

by marine

1964 - (Special)

cupronickel-clad

Controls

28,

protects

strands

rings.

more MAILING

more MAILING

ADDRESS

FOREST

ST.

•

ATTLEBORO,

MASSACHUSETTS

•

TELEPHONE

AREA

CODE

617

•

222-2800

• CABLE:

TEXINS

.J.

~-A.__

ratio

wire

diameter

at 335,000

lb.

psi,

strength

in marine

tensile

strength

对 C-CLAD 的测试

of C-CLAD was tested

than galvanized

improved

plow steel.

higher

the

organisms.

marine

organisms. marine

deters

inhibits

reeling

进来支付

in and paying

organisms

because

the copper

ions which

sufficient

to produce

cupric

metallic,

C-CLAD cable

is also

weakens

新的衬板

The new clad

metal

longer,

to stay

on-station

cruises

now required

possible

and instrument

significantly

reduced.

Cable

is supplied

standard

configurations.

Standard

cupronickel

are

cupronickel are

每笔运营配送

per operating deli very

cable

is 8 weeks.

Being

resistant,

an undersea

problem

oceanographic

vessels

payloads

will

of SC%, will

up to 30,000

range

stranding

30 -

30 -

to 0.094".

thickness.

ratios,

thickness. ratios,

alternate

materials.

数据是现成的。

da.ta is available

in all

and material

少于

le:ss than

tec~1.nieal

fi:.

from 0.005"

横向对比增长 13%

13% by cross-sectional

相当多

is considerably Complete

in excess

lengths

线材直径

Wire diameters cladding

inspection-maintenance

Heavier

cable.

reportedly

in continuous

to permit

the frequent

检查停泊处

to check mooring

取决于数量，

depe~1.dent on quantity, house

to them.

is expected

and reduce

loss,

cladding

在镍白铜行业

in the cupronickel

cables.

many plastic

or breaks

C-CLAD cable

out operations.

are poisonous

bite

fish

2C%

of marine

by growth

is fouling

cable

常见的海底

common to undersea

problem

Another

prices

At a finished

和良好的疲劳感

and good fatigue

of 0.014",

that

cable.

强度重量比

strength-to-weight

a high

对于……的需求

is the need for

resistance

to corrosion

Second

Cable

Marine

Steel

Stainless

新的铜镍合金包覆层

New Cupronickel-Clacl

Although

cable

Although cable

cost

Normal

来自制造商。

from the manufacturer.